Download RQ6C050UN

1.5V Drive Nch MOSFET
RQ6C050UN
Data Sheet
 Structure
Silicon N-channel MOSFET
 Dimensions
TSMT6
 Features
1) Low On-resistance.
2) Space saving, small surface mount package (TSMT6).
3) 1.5V drive
 Applications
Switching
Each lead has same dimensions
Abbreviated symbol : XG
 Packaging specifications
Package
Type
 Inner circuit
Taping
(6)
(5)
(4)
TR
Code
Basic ordering unit (pieces)
3000
∗2
FD
Marking
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
 Absolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
20
±10
±5.0
±10
1.0
10
1.25
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Symbol
Rth(ch-a) ∗
Limits
100
Unit
°C/W
∗1 Pw 10μs, Duty cycle 1%
∗2 Mounted on a ceramic board
 Thermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
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c 2014 ROHM Co., Ltd. All rights reserved.
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1/4
2014.05 - Rev.A
Data Sheet
RQ6C050UN
 Electrical characteristics (Ta=25°C)
Parameter
Symbol
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗
RDS (on)
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
20
−
0.3
−
−
−
−
6.5
−
−
−
−
−
−
−
−
−
−
Typ.
Max.
−
−
−
−
22
27
32
40
−
900
190
120
15
25
70
100
12
2.5
1.7
±10
−
1
1.0
30
38
45
80
−
−
−
−
−
−
−
−
−
−
−
Unit
μA
V
μA
V
mΩ
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±10V, V DS=0V
ID= 1mA, V GS=0V
VDS= 20V, V GS=0V
VDS= 10V, I D= 1mA
ID= 5.0A, V GS= 4.5V
ID= 5.0A, V GS= 2.5V
ID= 2.5A, V GS= 1.8V
ID= 1.0A, V GS= 1.5V
VDS= 10V, I D= 5.0A
VDS= 10V
VGS=0V
f=1MHz
VDD 10V
ID= 2.5A
VGS= 4.5V
RL 4Ω
RG=10Ω
VDD 10V, ID= 5.0A
VGS= 4.5V
RL 2Ω, RG=10Ω
∗Pulsed
 Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
Typ.
Max.
−
−
1.2
Unit
V
Conditions
IS= 1.0A, V GS=0V
∗Pulsed
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c 2014 ROHM Co., Ltd. All rights reserved.
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2014.05 - Rev.A
Data Sheet
RQ6C050UN
 Electrical characteristics curves
Ciss
Coss
100
Crss
10
0.01
0.1
1
10
td (off)
td (on)
10
tr
1
0.01
100
0.1
1
4
3
2
1
0
0
2
4
6
8
10
12
14
16
DRAIN CURRENT : I D (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
100
10
0.01
0.1
1
10
ID=2.5A
40
20
0
0
1
Ta=125 °C
Ta=75 °C
Ta=25 °C
Ta= −25°C
10
0.01
0.1
1
3
4
5
6
7
8
10
GS
9
10
1000
1
0.1
0.01
0.0
(V)
0.5
Ta=125 °C
Ta=75 °C
Ta=25 °C
Ta= −25°C
10
0.01
0.1
1
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
VGS=2.5V
Pulsed
100
VGS=0V
Pulsed
Ta=125 °C
Ta=75 °C
Ta=25 °C
Ta= −25°C
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VGS=4.5V
Pulsed
100
2
GATE-SOURCE VOLTAGE : V
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain current (Ι)
1000
10
Ta=25 °C
Pulsed
ID=5.0A
SOURCE CURRENT : I S (A)
Ta=125 °C
Ta=75 °C
Ta=25 °C
Ta= −25°C
60
10
Fig.6 Source Current vs.
Source-Drain Voltage
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VGS=4.5V
Pulsed
DRAIN CURRENT : I D (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Ta=25 °C
VDD=10V
VGS=4.5V
RG=10Ω
Pulsed
10
Ta=25 °C
VDD=10V
ID=5A
RG=10Ω
Pulsed
5
DRAIN-SOURCE VOLTAGE : VDS (V)
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
100
GATE-SOURCE VOLTAGE : VGS (V)
tf
SWITCHING TIME : t (ns)
1000
6
1000
Ta=25 °C
f=1MHz
VGS=0V
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
CAPACITANCE : C (pF)
10000
VGS=1.8V
Pulsed
Ta=125 °C
Ta=75 °C
Ta=25 °C
Ta= −25°C
100
10
0.01
0.1
1
DRAIN CURRENT : I D (A)
DRAIN CURRENT : I D (A)
DRAIN CURRENT : I D (A)
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain current (Ι)
Fig.8 Static Drain-Source
On-State Resistance vs.
Drain current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance vs.
Drain current (ΙΙΙ)
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3/4
10
2014.05 - Rev.A
Data Sheet
RQ6C050UN
1000
Ta=125 °C
Ta=75 °C
Ta=25 °C
Ta= −25°C
100
10
0.01
0.1
1
VGS=1.5V
VGS=1.8V
VGS=2.5V
VGS=4.5V
100
10
0.01
10
100
Ta=25 °C
Pulsed
FORWARD TRANSFER ADMITTANCE
: Yfs (S)
VGS=1.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
1000
0.1
DRAIN CURRENT : I D (A)
1
VDS=10V
Pulsed
Ta= −25°C
Ta=25 °C
Ta=75 °C
Ta=125 °C
10
1
0.1
0.01
10
0.1
DRAIN CURRENT : I D (A)
Fig.10 Static Drain-Source
On-State Resistance vs.
Drain current (Ι )
1
10
DRAIN CURRENT : I D (A)
Fig.12 Forward Transfer Admittance
vs. Drain current
Fig.11 Static Drain-Source
On-State Resistance vs.
Drain current ( )
 Measurement circuit
Pulse Width
VGS
ID
VDS
RL
D.U.T.
90%
50%
10%
VGS
VDS
50%
10%
10%
RG
VDD
90%
td(on)
ton
Fig.13 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.14 Switching Waveforms
VG
VGS
ID
VDS
RL
Qg
VGS
IG(Const.)
D.U.T.
Qgs
RG
Qgd
VDD
Charge
Fig.15 Gate Charge Measurement Circuit
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Fig.16 Gate Charge Waveform
2014.05 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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the recommended usage conditions and specifications contained herein.
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information.
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