Download RE1L002SN

RE1L002SN
Nch 60V 250mA Small Signal MOSFET
Datasheet
lOutline
VDSS
60V
RDS(on) (Max.)
2.4W
ID
250mA
PD
150mW
lFeatures
(3)
EMT3F
(1)
(2)
lInner circuit
1) Low voltage drive(2.5V) makes this
(1) Gate
(2) Source
(3) Drain
device ideal for partable equipment.
2) Drive circuits can be simple.
3) Built-in G-S Protection Diode.
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Taping
Reel size (mm)
lApplication
180
Tape width (mm)
Switching
8
Type
Basic ordering unit (pcs)
3,000
Taping code
TL
Marking
RK
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
60
V
Continuous drain current
ID *1
250
mA
ID,pulse *2
1
A
Gate - Source voltage
VGSS
20
V
Power dissipation
PD *3
150
mW
Tj
150
°C
Tstg
-55 to +150
°C
Pulsed drain current
Junction temperature
Range of storage temperature
lThermal resistance
Values
Parameter
Symbol
RthJA *3
Thermal resistance, junction - ambient
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© 2012 ROHM Co., Ltd. All rights reserved.
1/10
Unit
Min.
Typ.
Max.
-
-
833
°C/W
2012.08 - Rev.A
Data Sheet
RE1L002SN
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Drain - Source breakdown
voltage
Symbol
Conditions
Unit
Min.
Typ.
Max.
V(BR)DSS
VGS = 0V, ID = 1mA
60
-
-
V
Zero gate voltage drain current
IDSS
VDS = 60V, VGS = 0V
-
-
1
mA
Gate - Source leakage current
IGSS
VGS = 20V, VDS = 0V
-
-
10
mA
VGS (th)
VDS = 10V, ID = 1mA
1.0
-
2.3
V
VGS=10V, ID=250mA
-
1.7
2.4
VGS=4.5V, ID=250mA
-
2.1
3.0
RDS(on) *4 VGS=4.0V, ID=250mA
-
2.3
3.2
VGS=2.5V, ID=10mA
-
3.0
12.0
VGS=10V, ID=250mA, Tj=125°C
-
2.6
3.7
250
-
-
Gate threshold voltage
Static drain - source
on - state resistance
Transconductance
gfs *4
VDS=10V, ID=250mA
W
mS
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Each therminal mounted on a recommended land
*4 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2/10
2012.08 - Rev.A
Data Sheet
RE1L002SN
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
15
-
Output capacitance
Coss
VDS = 25V
-
4.5
-
Reverse transfer capacitance
Crss
f = 1MHz
-
2.0
-
VDD ⋍ 30V, VGS = 10V
-
3.5
-
tr *4
ID = 100mA
-
5
-
td(off) *4
RL = 300W
-
18
-
tf *4
RG = 10W
-
28
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *4
pF
ns
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Continuous source current
Symbol
IS *1
Pulsed source current
ISM *2
Forward voltage
VSD
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© 2012 ROHM Co., Ltd. All rights reserved.
*4
Conditions
Unit
Min.
Typ.
Max.
-
-
125
mA
-
-
1
A
-
-
1.2
V
Tc = 25°C
VGS = 0V, Is = 250mA
3/10
2012.08 - Rev.A
Data Sheet
RE1L002SN
lElectrical characteristic curves
Fig.2 Drain Current Derating Curve
120
1.2
100
1
Drain Current Dissipation
: ID/ID max. (%)
Power Dissipation : PD/PD max. [%]
Fig.1 Power Dissipation Derating Curve
80
60
40
20
0.8
0.6
0.4
0.2
0
0
0
50
100
150
-25
200
Junction Temperature : Tj [°C]
0
25
50
75
100
125
150
Junction Temperature : Tj [°C]
Fig.4 Typical Output Characteristics(II)
Drain Current : ID [A]
Drain Current : ID [A]
Fig.3 Typical Output Characteristics(I)
Drain - Source Voltage : VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
Drain - Source Voltage : VDS [V]
4/10
2012.08 - Rev.A
Data Sheet
RE1L002SN
lElectrical characteristic curves
Fig.6 Typical Transfer Characteristics
80
VGS = 0V
ID = 1mA
pulsed
70
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
Fig.5 Breakdown Voltage
vs. Junction Temperature
60
50
40
-50
0
50
100
150
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [°C]
Fig.8 Transconductance vs. Drain Current
Fig.7 Gate Threshold Voltage
vs. Junction Temperature
VDS = 10V
ID = 1mA
pulsed
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
3
2
1
0
-50
0
50
100
150
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
Drain Current : ID [A]
5/10
2012.08 - Rev.A
Data Sheet
RE1L002SN
lElectrical characteristic curves
Fig.10 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.9 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Gate - Source Voltage : VGS [V]
Drain Current : ID [A]
Fig.11 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [W]
3
2
1
VGS = 10V
ID = 250mA
pulsed
0
-50 -25
0
25
50
75
100 125 150
Junction Temperature : Tj [ºC]
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© 2012 ROHM Co., Ltd. All rights reserved.
6/10
2012.08 - Rev.A
Data Sheet
RE1L002SN
lElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.12 Static Drain-Source On-State
Resistance vs. Drain Current(II)
Drain Current : ID [A]
Drain Current : ID [A]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(V)
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Drain Current : ID [A]
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
7/10
2012.08 - Rev.A
Data Sheet
RE1L002SN
lElectrical characteristic curves
Fig.17 Switching Characteristics
Capacitance : C [pF]
Switching Time : t [ns]
Fig.16 Typical Capacitance
vs. Drain - Source Voltage
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Source Current : IS [A]
Fig.18 Source Current
vs. Source Drain Voltage
Source-Drain Voltage : VSD [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
8/10
2012.08 - Rev.A
Data Sheet
RE1L002SN
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2　Switching Waveforms
lNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2012 ROHM Co., Ltd. All rights reserved.
9/10
2012.08 - Rev.A
Data Sheet
RE1L002SN
lDimensions (Unit : mm)
D
A
x
S A
HE
E
L
Lp
EMT3F
b
c
e
e1
A1
l1
A
A2
e
S
b2
Patterm of terminal position areas
DIM
A
A1
A2
b
c
D
E
e
HE
L
Lp
x
MILIMETERS
MIN
MAX
0.65
0.85
0.00
0.10
0.60
0.80
0.21
0.36
0.08
0.18
1.50
1.70
0.76
0.96
0.50
1.50
1.70
0.37
0.35
0.55
0.10
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.05
0.46
0.65
INCHES
MIN
MAX
0
0.024
0.008
0.003
0.059
0.03
0.004
0.031
0.014
0.007
0.067
0.038
0.02
0.059
0.067
0.015
0.014
-
0.022
0.004
INCHES
MIN
-
MAX
0.041
0.018
0.026
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
10/10
2012.08 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
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More detail product informations and catalogs are available, please contact us.
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http://www.rohm.com/contact/
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A