Download RB471E

Schottky Barrier Diode
RB471E
Applications
Low current rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
2.9±0.2
0.15±0.1
0.06
Each lead has same dimension
＋0.1
0.3　－0.05各リードとも同寸法
0.35 0.45
0.6
1.6
2.8±0.2
0.45 0.35
(2)
＋0.2
－0.1
(1)
Features
1) Small mold type. (SMD5)
2) High reliability.
2.4
1.0MIN.
0.8MIN.
0～0.1
(4)
(3)
0.8±0.1
1.9±0.2
0.95
0.95
0.95 0.95
0.3～0.6
(5)
SMD5
1.1±0.2
0.1
Construction
Silicon epitaxial planar
1.9
Structure
ROHM : SMD5
JEITA : SC-74A
week code
Taping specifications (Unit : mm)
φ1.5±0.1
0
2.0±0.05
0.3±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Storage temperature
φ1.0MIN
4.0±0.1
3.2±0.1
Limits
40
40
0.1
1
125
40 to 125
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
3.2±0.1
8.0±0.2
5.5±0.2
0～0.5
3.2±0.1
3.5±0.05
1.75±0.1
4.0±0.1
1.35±0.1
Unit
V
V
A
A
°C
°C
(*1) Rating of per diode
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
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©2011 ROHM Co., Ltd. All rights reserved.
Conditions
Symbol
VF 1
VF 2
IR
Min.
Typ.
Max.
Unit
-
-
0.55
0.34
30
V
V
μA
IF=100mA
IF=10mA
VR=10V
Ct
-
-
6
pF
VR=10V , f=1MHz
1/3
2011.04 - Rev.B
Data Sheet
RB471E
100
100
10000
Ta=125℃
10
Ta=75℃
1
Ta=25℃
0.1
Ta=-25℃
0.01
0
100
200
300
400
500
1000
Ta=75℃
100
Ta=25℃
10
1
Ta=-25℃
0.1
0
10
15
20
25
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
0
35
450
440
430
AVE:439.5mV
290
280
270
AVE:281.5mV
260
7
6
5
AVE:5.10pF
4
3
2
Ifsm
1cyc
15
8.3ms
10
5
AVE:5.50A
0
0
Ct DISPERSION MAP
10
AVE:2.548uA
5
15
10
5
AVE:6.20ns
trr DISPERSION MAP
1000
8.3ms 8.3ms
1cyc
5
0
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
1cyc
Ifsm
8.3ms
10
5
0
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©2011 ROHM Co., Ltd. All rights reserved.
20
0
15
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
IFSM DISRESION MAP
15
0.1
15
30
1
10
20
IR DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
8
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ta=25℃
f=1MHz
VR=10V
n=10pcs
100
Ta=25℃
VR=10V
n=10pcs
0
20
9
30
25
VF DISPERSION MAP
10
20
30
Ta=25℃
IF=10mA
n=30pcs
300
VF DISPERSION MAP
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE CURRENT:IR(uA)
460
420
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
5
310
Ta=25℃
IF=100mA
n=30pcs
FORWARD VOLTAGE:VF(mV)
FORWARD VOLTAGE:VF(mV)
470
10
1
0.01
600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
Ta=125℃
0.1
1
10
TIME:t(s)
IFSM-t CHARACTERISTICS
2/3
100
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
10
IM=1mA
1ms
1
0.001
IF=10mA
time
300us
0.1
10
TIME:t(ms)
Rth-t CHARACTERISTICS
1000
2011.04 - Rev.B
Data Sheet
RB471E
0.1
DC
Sin(θ＝180)
0.04
0.02
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.06
REVERSE POWER
DISSIPATION:PR (W)
FORWARD POWER
DISSIPATION:Pf(W)
D=1/2
Per chip
Per chip
0.06
0.08
0.05
Sin(θ＝180)
0.04
D=1/2
0.03
DC
0.02
0.01
0
0
0
0.1
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.3
0.25
0.2
0.2
0
10
20
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
30
0.25
0.2
Io
0A
0V
t
DC
T
VR
D=t/T
VR=15V
Tj=125℃
0.15
0.1
0.05
D=1/2
Sin(θ＝180)
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
125
Io
0A
0V
Per chip
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.3
0.07
Per chip
t
T
DC
VR
D=t/T
VR=15V
Tj=125℃
0.15
D=1/2
0.1
Sin(θ＝180)
0.05
0
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
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©2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.B
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A