Download RB228T100

Data Sheet
Schottky Barrier Diode
RB228T100
lDimensions (Unit : mm)
lApplications
Switching power supply
lStructure
4.5±0.3
0.1
2.8±0.2
0.1
8.0±0.2
12.0±0.2
lFeatures
1)Cathode common type.
2)Low IR
3)High reliability
4)AEC-Q101 qualified
5.0±0.2
①
lConstruction
Silicon epitaxial planer
15.0±0.4
0.2
8.0
10.0±0.3
0.1
13.5MIN
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
①
Manufacture Date
lAbsolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
VRM
Reverse voltage (repetitive)
110
VR
Reverse voltage (DC)
100
Average rectified forward current (*1)
30
Io
IFSM
Forward current surge peak (60Hz・1cyc) (*2)
100
Junction temperature
150
Tj
Storage temperature
-40 to +150
Tstg
(*1) Business frequence sin wave, Tc=83°C max. Rating of per diode : lo/2
(*2) per diode
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
Thermal impedance
Unit
V
V
A
A
C
C
Min.
Typ.
Max.
Unit
-
-
0.87
V
IR
-
-
θjc
-
-
0.15
2.00
°C/W
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1/4
mA
Conditions
IF=5A
VR=100V
junction to case
2012.08 - Rev.B
1000000
100
Ta=75°C
Ta=125°C
1
Ta=150°C
0.1
Ta=25°C
0.01
0.001
100
200
300
400
500
600
700
10000
Ta=75°C
1000
Ta=25°C
100
Ta=-25°C
10
Ta=-25°C
800
1
900
Ta=125°C
Ta=150°C
100000
REVERSE CURRENT:IR(nA)
10
FORWARD CURRENT:IF(A)
Data Sheet
RB228T100
0
10
20
30
40
50
60
70
1000
90 100 110
770
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
80
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100
Ta=25°C
IF=5A
n=30pcs
760
750
740
AVE:731.5mV
730
10
0
10
20
720
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
600
Ta=25°C
VR=100V
n=30pcs
300
200
AVE:151nA
100
590
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
400
Ta=25°C
f=1MHz
VR=0V
n=10pcs
580
570
560
550
540
530
AVE:514.4pF
520
510
500
0
IR DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2012.08 - Rev.B
Data Sheet
RB228T100
30
400
PEAK SURGE
FORWARD CURRENT:IFSM(A)
350
REVERSE RECOVERY TIME:trr(ns)
1cyc
IFSM
8.3ms
300
AVE:231A
250
200
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
AVE:8.2ns
10
5
0
IFSM DISPERSION MAP
trr DISPERSION MAP
400
300
IFSM
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
250
8.3ms
1cyc
200
150
100
1
10
200
100
0
100
t
300
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
60
100
50
D=1/2
10
Rth(j-a)
Rth(j-c)
1
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Mounted on epoxy board
40
30
Sin(θ＝180)
20
DC
10
0.1
0.001
0.01
0.1
1
10
100
0
1000
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2012 ROHM Co., Ltd. All rights reserved.
3/4
0
10
20
30
40
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
50
2012.08 - Rev.B
Data Sheet
RB228T100
0.02
80
REVERSE POWER
DISSIPATION:PR (W)
0.015
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
70
DC
0.01
D=1/2
0.005
Sin(θ＝180)
0
10
20
30
40
50
60
70
80
90
D=1/2
D=t/T
VR=50V
Tj=150°C
DC
30
20
Sin(θ＝180)
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
80
30
Io
0A
0V
60
T
DC
50
40
VR
t
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
70
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
t
T
40
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
D=t/T
VR=50V
Tj=150°C
D=1/2
30
20
Sin(θ＝180)
0
25
50
25
20
AVE:10.9kV
15
10
AVE:3.9kV
5
10
0
VR
50
0
100
Io
0V
60
10
0
0A
75
100
125
0
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
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© 2012 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2012.08 - Rev.B
Notice
Notes
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
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The Products are not designed or manufactured to be used with any equipment, device or
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A