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io III Lecture Single Crystal Silicon Wafer Manufacturing School of Microelectronic Engineering Objectives School of Microelectronic Engineering Why Single Crystal Material? Single crystal Si wafers the most commonly used semiconductor material in IC manufacturing. In the original form, most solid materials exist in the form of amorphous or polycrystalline structures. To make an industrial standard transistor, a single crystal semiconductor substrate is required. This is due to the scattering of electron from the grain boundary can seriously affect the p-n junction characteristics. School of Microelectronic Engineering Why Silicon? Abundant, 26% earth crust’s is silicon. One of the most abundant element on earth. ` Can form a very stable and strong oxide and easy to grow. Larger bang gap (compared to Ge), can tolerate a higher operation temperature, wider impurity range and higher breakdown voltage. School of Microelectronic Engineering ` School of Microelectronic Engineering Crystal Structure Atomic structure of a single crystal Si unit cell Crystal orientations are defined in Miller Indexes. ` MOS IC Bipolar IC School of Microelectronic Engineering Crystal Defects Vacancy – missing atom from crystal lattice ` Interstitial defect – extra atom in between normal lattice Frenkel defect – vacancy and interstitial in pair Dislocation – geometric fault School of Microelectronic Engineering School of Microelectronic Engineering Dislocation School of Microelectronic Engineering From Sand to Wafer ` School of Microelectronic Engineering From Sand to Wafer 1st step: Crude Silicon or MGS (~ 99% poly-crystal silicon) ` School of Microelectronic Engineering From Sand to Wafer 2nd step: High Purity TCS Formation (Trichlorosilane, SiHCl3) MGS grinded into powder MGS powder react with HCL to form TCS TCS is purified up to 99.9999999% ` School of Microelectronic Engineering From Sand to Wafer 3rd step: EGS (Electronic Grade Silicon) Formation – polycrystal form ` School of Microelectronic Engineering From Sand to Wafer 4th Step: Crystall Pulling EGS to be heated at high temperature and pulled using singleCrystal silicon seed. 2 methods; Czochralski (CZ) Method – larger diameter, lower cost, in situ doping. Floating Zone (FZ) Method School of Microelectronic Engineering From Sand to Wafer CZ Method School of Microelectronic Engineering From Sand to Wafer CZ Method School of Microelectronic Engineering From Sand to Wafer FZ Method School of Microelectronic Engineering FZ and CZ Comparison ` School of Microelectronic Engineering From Sand to Wafer 5th Step: Ingot Polishing and Wafer Sawing Ingot polishing to remove the grooves created during pulling Wafer slicing School of Microelectronic Engineering From Sand to Wafer Typical Wafer Parameters School of Microelectronic Engineering 6th Step: Wafer Finishing •Grinding •Edge Polished •Slicing •Lapping •Polished •Process Control School of Microelectronic Engineering Epitaxial Wafer School of Microelectronic Engineering Epitaxial Wafer The most expensive process step, ~ USD 20 -100 per step compared to USD 1 per step for other process. School of Microelectronic Engineering