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Solid State Microwave Devices Present State of Development & Future Projections 1 Historical evolution of Microwave Sources 1.Microwave is the region after radio waves. 2.Radio waves are meant for communication. 3.When a very long distance communication was requiredthese waves failed to provide the required characteristics and the need for microwaves was felt. 2 What are Microwaves ? 3 What are Microwaves? These are Electromagnetic (EM) Waves having Frequency in the Microwave Regions Although there is no clear cut, cut off frequency for the start or end of the Microwave Regions But EM waves lying in the frequency region of 1 GHz f 300 GHz are termed as Microwaves 4 Frequency Lo AM ng , W FM av , es Vid eo RF & μ wave s regio n Milli I n Met fr er a wav re e d Vi sib le Li gh t u u.v loi tle rt X R a y s Ga Cos mm mic a Ray rays s a Free space wavelength Spectrum of Electro Magnetic Waves (EMW) 5 Basic Production Mechanism of Microwaves Any Charge Particle which is either – De-Accelerating or – Oscillating or – Pulsating Produces Electromagnetic Waves More the energy of this particle, higher will be the Frequency as well as Energy of the Radiations produced E particle = h f if this f, falls in Microwave bands, we get Microwaves 6 • The Charged particle with the smallest mass is ELECTRON • Therefore, whenever a beam of High Energy Electrons is allowed to • De-Accelerate or • Oscillate or • Pulsate • Microwaves are produced 7 DEVICES (tool) FOR THE PRODUCTION OF MICROWAVES. 8 There are two types of Microwave Sources 1. Vacuum Tube based 2. Solid State based They are further classified as 1. Pulsed Power Sources 2. CW Power Sources 9 Vacuum Tube based Vacuum based tube were insensitive to temperature. Did not get affected by radiation . However the demerits marked more. 10 MICROWAVE PRODUCTION USING VACUUM TUBES Initially thorium plated cathode was used to make work function lower. It emitted electrons and anode collected it (grid). This was the simple concept of generating frequency. 11 How any frequency gets generated? .As any energy is given to electrons they reach a higher energy level. .They however want to come back to there original level. .During the process of coming back they emit radiation E=hv v=frequency 12 IT DEPENDS ON WHAT IS THE LEVEL AT WHICH ELECTRONS ARE PLACED SO THAT WHEN SPECIFIC ENERGY IS APPLIED THEY EMIT A PARTICULAR FREQUENCY. 13 CEI 901-1 Receiver 14 901-1 top inside 15 7077 ceramic planar triode is about the size of a kidney bean. 16 Early '20 S tube 17 Early '10 rectifier tube 18 Transmitter Power tubes circa 1925, the largest glass RF power tubes still using forced air cooling system 19 Transmitter Power tubes circa 1925, the improveddesign second largest glass RF power tubes with large anode(plate) contact outside for water cooling system which can dissipate more power 20 Late '20 ST tube 21 Transmitter tube in '30 era 22 Transmitter tube in '40 era The smallest vacuum tube(invented by RCA in 1959) MICROWAVE TUBES OSCILLATORS AMPLIFIERS 1)REFLEX KLYSTRON 2)MAGNETRON 1)KLYSTRON 2)TRAVELLING WAVE TUBES-TWT Linear Bunching / Time Bunching of Electron Beam Pulses Electron Beam Pulses .modulate the velocity of electron beam . these velocity-modulating electron beam releases their magnifying energy in last cavity and transfer it into magnifying RF of same frequency Electron Beam Pulses Bunching of Electron Beam Pulses Basics of Azimuthal Bunching Phase Bunching/Azimuthal Bunching/Angular Bunching: wc = (e/m)×() early 1940s Pierce and Shepherd of Bell Lab invented the reflex Klystron, which is low-power device and used in the heterodyne oscillator of radar receiver . Reflex Klystron Present Status of Klystrons 1. 100 MW, 10 GHz, 2 µsec 2. 65 MW, 3.5 µsec 3. 200 MW, 1 µsec The ultimate goal is to have 500 MW, 2 µsec Klystrons Relativistic Klystron 1. 5 MeV, 2 kA, 1 GW 2. 50 MeV, 20 kA, 1 TW A 6 MW (peak) Klystron In 1959 both Philco and SONY introduced their transistorized portable black-and-white TV. Starting from 1952 UHF TV emerged, all UHF TV transmitter used Klystron amplifier. Vidicon and Photomultiplier Vacuum Tube based Devices Present Scenario: Triodes, Tetrodes, Pentodes Klystrons Relativistic Klystrons Travelling Wave Tubes Magnetrons Future Scenario: Gyroklystrons Gyrotrons Lasertrons Microlasertrons Gigatron Thyratron and Ignitron In 1921 Hull of GE proposed magnetron , in 1935 Ponte and Gotten of CSF invented the magnetron and later in 1940 Randall and Boot of Univ. of Birmingham independantly also invented Magnetron Magnetron---first microwave power oscillator uses multiple resonant cavities in a electron tube exerting a strong orthogonal magnetic field can generate microwave energy at 3GHz around 1 kw at that time Magnetron: Microwave Oscillator A cutaway View of the Magnetron An Inner View of a Magnetron 250 kW, 5 – 6 GHz 400 kW, 10 GHz at least 10 times frequency ability than triode or tetrode transmitting tubes at that time. Soon the magnetron developed very fast due to high demand of war radar . For example Western Electric manufactured 10,000 units per month of X-band magnetron in early 1944 for bomber. TWT ( Travelling Wave Tube) In1944 Kompfner invented TWT(Travelling Wave Tube)--Similar principle to Klystron but using slow-wave structure instead of resonant cavity Has wider bandwidth but a little lower efficiency Traveling Wave Tube Traveling Wave Tube A Product of Toshiba Electron Inc. transistors, germanium power diodes -50’s era Epoxy planar silicon transistors---most popular silicon transistors in '60 era Silicon power transistors Integrated Circuits in '60 and '70 era "Pancake" and other silicon VHF~Microwave transistors two different germanium transistors---popular in '50 era Transmitter tube popular in '50 era In 1937 Varian brothers invented Klystron---first UHF and microwave tube, which uses two or more resonant cavities inside an electron tube letting accelerated electron beam passing through it. AVALANCHE DEVICES AND CIRCUITS THESE ARE NEGATIVE RESISTANCE DEVICES LIKETUNNEL DIODES GUNN DIODES THEY WORK ON THE PRINCIPLE OF VOLTAGE BREAKDOWN ACROSS REVERSE BIASED JUNCTION. 55 THESE ARE JUNCTION BASED DEVICES. IN THESE DEVICES AN AVALANCHE IS PRODUCED. THE BREAKDOWN OF AVALANCHE PRODUCES A HUGE SUPPLY OF ELECTRON AND HOLE PAIR. THEY DELIVER POWER BY CONVERTING DC BIAS POWER INTO MICROWAVES. 56 READ DIODES THEORY OF THE DEVICE WAS FIRST GIVEN BY READ IN 1958. THE DEVICE WAS BUILT BY LEE AND HIS CO- WORKERS IN 1965. READ DIODE WORKS IN TWO DISTINCT MODES 1)IMPATT DIODES(5-10%EFF) 2)TRAPATT MODE(20-60%EFF) 57 NEGATIVE RESISTANCE THE CARRIERS DRIFT IN THE HIGH FIELD REGION TO INDUCE AN ELECTRIC CURRENT IN THE CIRCUIT,WHICH IS 180 DEGREES OUT OF PHASE W.R.T. APPLIED AC VOLTAGE HENCE A NEGATIVE RESISTANCE 58 59 IMPATT DIODES IMPACT IONIZATION AND TRANSIT TIME DEVICES THESE ARE READ DIODES THAT EXHIBIT NEGATIVE RESISTANCE. 60 NEGATIVE RESISTANCE IS DUE TO 1) IMPACT IONIZATION AVALANCHE. 2) TRANSIT TIME TAKEN WHILE DRIFTING THROUGH THE REGION. CAME INTO EXISTENCE IN 1965. 61 MATERIAL DOPING WISE: (3 TYPES) 1) ABRUPT P-N JUNCTION 2) LINEARLY GRADED P-N JUNCTION 3) P-I-N JUNCTION 62 63 64 WELL DESIGNED IMPATT SHOULD HAVE: APPROPRIATE IMPEDANCE OVER A BROAD RANGE OF FREQUENCIES IT SHOULD HAVE HIGH IMPEDANCE FOR FREQUENCY LYING BETWEEN DC-500MHZ LOW IMPEDANCE AT OPERATING FREQUENCIES. 65 DIODE IS PUT IN AMICROWAVE CAVITY AND IS REVERSE BIASED THE IMPEDANCE OF CAVITYINDUCTIVE THE IMPEDANCE OF CAVITYCAPACITIVE LEADS TO A RESONANT CIRCUIT FREQUENCIES OF AROUND 100GHZ ARE EASILY ATTAINABLE. 66 TRAPATT DIODES 67 68