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Download Datasheet - New Jersey Semiconductor
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TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Triacs Silicon Bidirectional Triode Thyristors ... designed primarily for industrial and military applications for the control of ac loads In applications such as power supplies, heating controls, motor controls, welding equipment and power switching systems; or wherever full-wave, silicon gate controlled solid-state devices are needed. • Glass Paaslvated Junctions and Center Gate Fire • Press Fit Stud — T6400 Stud —T6410 Isolated Stud — T6420 • Gate Triggering Guaranteed in All 4 Quadrants T6400 T6410 T6420 Series TRIACs 40 AMPERES RMS 200 thru 800 VOLTS M W-T>0 MAXIMUM RATINGS Rating Symbol Peak Repetitive Off-State Voltage, Note 1 (Tj = -65 to + 110°c) Gate Open T6400B, T6410B, T6420B T6400D, T6410D, T6420D T6400M, T6410M, T6420M T6400N, T6410N, TS420N On-State Current RMS (Conduction Angle = 360") TC (Pressfit) = 70°C TC (Stud) - 65°C Peak Surge Current (Non-Repetitive) (One Full Cycle, 60 Hz) Circuit Fusing (Tj = -65 to + 110"C,t = 1.26 to 10ms) Peak Gate Power (Pulse Width •=• 10 pa) Average Gate Power Peak Gate Current (Pulse Width = 1 /is) Operating Temperature Range Storage Temperature Range Stud Torque Value Unit Volts VDRM 200 400 600 800 ITIRMSI 40 Amps iTSM 300 Amps |2t 460 A2s PGM 40 Watts PG(AV) 0.7B Watt IGTM 12 Amps TC -65 to +110 •c Tstg -65 to +150 •c - 30 in. Ib. Symbol Max Unit "fljc 0.8 0.9 1 °c/w T6410 STUD T6400 PRESS FIT THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Pressfit Stud Isolated Stud T6420 ISOLATED STUD Note 1. Ratings apply for opan gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors T8400 • T6410 • T6420 Series ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) Characteristic Mln Symbol Typ IDRM, IRRM Peak Forward or Reverse Blocking Current (Rated VDRM or VRRM, gate open) Tj = 25°C Tj = 110°C _ - Maximum On-State Voltage (Either Direction) (IT = 100 A Peak) VTM Gate Trigger Current (Continuous do), Note 1 (VD = 12 Vdc, RL = 30 Ohms VMT2I+). VG< + ) VMT2( + )' VG(-) VMT2(-)-VG(-| VMT2(-)'VG( + ) VMT2( + ). VG( + ), VMT2(-).VG(-). TC - -65"C "CT 1.5 ' — Max Unit 10 4 MA mA 2 Volts mA 15 30 20 40 50 80 SO 80 125 240 1.35 2.5 3.4 - 25 60 100 ~~ 1.7 3 - VMTZI + ). VG< - ). VMT2( - ), vG( + j, TC - - 65-c Gate Trigger Voltage (Continuous dc) (Vo = 12 Vdc, RL - 30 Ohms, TC = 25"C TC = ~65°C (Vo - Rated VDRM- RL - 125 Ohms, TC = 110°C) VGT Holding Current (Either Direction) (VD = 12 Vdc, Gate Open) (Initiating Current = 500 mA) IHO Volts 0.2 mA TC - 25°C TC - -65«C Gate Controlled Turn-On Time (Rated VQRM, If = 60 A, IQJ = 200 rnA, Rise Time - 0.1 fis) «gt Critical Rate of Rise of Commutation Voltage, On-State Conditions (di/dt = 22 A/ms, Gate Unenerglzed, VQ - Rated VDRQMIT(RMS) = ^O A, TC (Pressfit) = 70'C) TC (Stud) - B5"C MS 5 dv/dt(c) V//is Note 1. All voltage polarities referenced to main terminal 1. FIGURE 2 - RMS CURRENT DERATING "III 10 2D 30 IT(RMS). FULLCYCLE RMS ON-STATE CURRENT (AMP) CASE TEMPERATURE (°CI T£, MAXIMUM ALLOWABLE CURRENT WAVEFORM • SINUSOIDAL LOAD " RESISTIVE OR INDUCTIVE CONDUCTION ANGLE- s s s s s l i i I FIGURE 1 - ON-STATE POWER DISSIPATION CURRENT WAVEFORM SINUSOI OAL -LOAD « RESISTIVE DR INDUCTIV CONDUCTION ANGLE » 360" I •^ -^ r 71 % o ,80" | y 360° ISO ATED STU JTYPE CONDUCTION A 4GLE •»l*»lll 10 ^.PRE! S-FIT 1 —"III 20 s/ S* i ^— KS ^ 30 ^ 40 ITIRMSI. RM$ ON STATE CURRENT IAMPI VPES •UDT1 PES