* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download , One.. Temperature Pressure Dryness Proximity Voltage Current
Survey
Document related concepts
Transistor–transistor logic wikipedia , lookup
Audio power wikipedia , lookup
Nanofluidic circuitry wikipedia , lookup
Valve RF amplifier wikipedia , lookup
Josephson voltage standard wikipedia , lookup
Schmitt trigger wikipedia , lookup
Operational amplifier wikipedia , lookup
Thermal runaway wikipedia , lookup
Wilson current mirror wikipedia , lookup
Voltage regulator wikipedia , lookup
Opto-isolator wikipedia , lookup
Current source wikipedia , lookup
Resistive opto-isolator wikipedia , lookup
Switched-mode power supply wikipedia , lookup
Power electronics wikipedia , lookup
Current mirror wikipedia , lookup
Surge protector wikipedia , lookup
Transcript
, One.. 20STERNAVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212) 227-6005 FAX: (201) 376-8960 SCR C103 CONTROLS — SENSORS — Small motors Small lamps Remote Temperature Pressure Dryness Proximity Voltage Current SWITCHING — Solid-state relay Relay driver Counter Low power inverter AMPLIFIERS — (gat*) LOGIC CIRCUITS TIMERS 120V AC LINE OPERATION FEATURES: 200 /iA Gate sensitivity 8-amp surge SO-thru 200-volt selection Plastic TO-18 package LowVP Highdv/dt Typ.1 MAXIMUM ALLOWABLE RATINGS C103Y C103YY C103A C103B 30 Volts 60 Volts 100 Volts 200 Volts 30 Volts 60 Volts 100 Volts 200 Volts Typ* I (with P-Slrop) 'Roc = 1000 ohms maximum. 'V«lu« apply for »n> or negative Kate voltage only. RMS On-State Current, ITWMB) (all Conduction Angles) Peak One Cycle Surge (non-rep) On-State Current, ITS* Peak Gate Power Dissipation, POM Average Gate Power Dissipation, PQ<AT> ..: Peak Positive Gate Current, Ion Peak Negative Gate Voltage, V<m Storage Temperature, T«TO Operating Junction Temperature, TJ 0.8 Amperes 8.0 Amperes .1.0 Watts for 8.3 msec. 0.01 Watts 0.5 Amperes 8 Volts -65'C to +150°C -66'C to +125°C ne. TELEPHONE: (201) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 C103 FAX: (201)376-8960 CHARACTERISTICS 1KSPP11I S^^^^gii^Mp^^ltrTl Peak Reverse and Off-State Current (All types) Iain or — — — — — — IDEM DC Gate Trigger Current IOT — DC Gate Trigger Voltage — VOT — 0.1 Peak On-State Voltage VT« Holding Current " ' — — — — ~ "• 1.0 ,A 50 200 /iAdc 500 0.8 Vdc 1.0 — V 1.6 mAdc IH t— Critical Rate of Rise of OffState Voltage Circuit Commutated Turn-Off Time To = +25 *C, ROK = 1000 ohms VERM = VOHH = Rated Value. dv/dt ^^ — 20 5.0 10.0 ~ V//ISBC 15 t. i Steady-State Thermal Resistance Ruo RMA RMO RMA — — — — — — — — 125 °C/W 230 110 170 L To = +125*C, ROK = 1000 ohms V»«j« = VD*M = Rated Value. Tt= +25°C, VD = 6Vdc, RL = 100 ohms. To = -65°C, VD = 6Vdc, RL = 100 ohms. To = +25-C, VD = 6Vdc, RL = 100 ohms. To = -65°C, VD = 6Vdc, RL = 100 ohms. To = +126°C, Rated VD.K, R L = 1000 ohms. To = +25°C, IT« = l.OA peak, 1 msec, wide pulse, Duty Cycle § 2% Anode source voltage = 12Vdc, ROK = 1000 ohms. To = +25'C To = -65C To = +125°C, Rated V™, ROK = 1000 ohms. To = +125° C, rectangular current waveform. Rate of rise of current <10A/^sec. Rate reversal of current <5A//isec. ITH = lA (50 /isec. pulse). Rep. Rate = 60 pps. VMM = Rated, V« = 15V Min., V™ = Rated. Rate of Rise of reapplied off-state voltage = 20V/ psec. ; Gate Bias = 0 Volts, 100 Ohms (during turn-off time interval). Junction-to-case (flat side of case is temp. ref. point) , Junction-to-ambient (free convection) . Junction to P-strap dissipator (rounded surface is temp. ref. point) . Junction-to-ambient, with P-strap dissipator (free convection). NOTES: i JUNCTION TEMPERATURE • +123*c Z FREQUENCY 'SO TO 400 Hi TEMPERATURE ITUREyr • tlZS'C, [^ 0.1 O.J 0.4 O.S 0.6 O.T AVERAGE ON-STATE CURRENT-AMPERES INSTANTANEOUS ON-STATE VOLTAOE-VOLTS 1. MAXIMUM ON-STATE CHARACTERISTICS 2. MAXIMUM ON-STATE POWER DISSIPATION FOR SINUSOIDAL CURRENT WAVEFORM ai