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Homework #3 Solution 1. In a particular cascaded current mirror, such as that shown at the right, all transistors have Vt=0,6V, µnCox=160 =160µA/V2, L=1µm, and VA=10V. Widths W1=W4=4µm, and W2=W3=40µm. µm. The reference current IREF is 20µA. What output current results? What are the voltages at the gates of Q2 and Q3? What is the lowest voltage at the output for which current current-source operation is possible? What are the values of gm and ro of Q2 and Q3? What is the output resistance of the mirror? Fall 2010 1 Homework #3 Solution 2. Find the output resistance of the double double-cascode current mirror below. Fall 2010 2 Homework #3 Solution 3. Show that the input resistance (R R seen at V3 node node)) for the Wilson MOS mirror shown at right is given by 2/gm. Assume that all three transistors are identical and neglect the Early effect. (Hint: Use a test source and find the Thevenin equivalent resistance) V3 Fall 2010 3 Homework #3 Solution 4. (a) For the circuit below, assume BJTs with high β and vBE=0.8V at 1mA. Find the value of R that will result in Io=10µA. (b) For the design in (a), find Ro assuming β=100 and VA=50V. Fall 2010 4 Homework #3 Solution 5. If the pnp transistor in the circuit below is characterized by its exponential relationship with a scale current IS show that the dc current I is determined by IR=VTln(I/ IS). Assume Q1 and Q2 to be matched and Q3, Q4, and Q5 to be matched. Find the value of R that yields a current I =100µA. For the BJT, VEB=0.7V at IE = 1mA. (worth 2 problems) + VEB - + VR - VEB6=VR Fall 2010 5 Homework #3 Solution 6. Design a bipolar differential amplifier such as that below to operate from ±2.5V 2.5V power supplies and to provide differential gain of 40 V/V. The power dissipation in the quiescent state should not exceed 2mW. (a) Specify the values of I and RC. What dc voltage appears at the collectors? (b) If β=100, =100, what is the input differential resistance. (c) For vid=20mV, 20mV, what is the signal voltage at each of the collectors? (d) For the situation in (c), what is the maximum allowable value of the input common mode voltage, VCM? Recall that to maintain an npn BJT in saturation, VB should not exceed VC by more than 0.4V. (a) (b) Rid=2rπ where rπ=β/gm=(100(25m) (25m))/0.2m=12,500Ω Rid=2(12,500)=25kΩ Fall 2010 6 Homework #3 Solution 7. Find the voltage gain and input resistance of the amplifier below assuming that β=100. =100. 8. Consider the basic bipolar differential circuit in which the transistors have β=100 =100 and VA=100V, with I=0.5mA, REE=200kΩ, and RC=20kΩ Ω. Find: (a) (b) (c) (d) the differential gain the differential input resistance the common-mode gain the common-mode mode rejection ratio Fall 2010 7 Homework #3 Solution (c) Acm=vod/Vicm=Rc/(2REE+rπ/β+1)=20k/(2*200k+10,100/(101))=14mV/V = =20log10|200/14m|=83dB 9. It is required to design a bipolar differential amplifier to provide the largest possible signal to a pair of 10kΩ load resistances. The input differential signal is a sinusoid of 5mV peak amplitude, which is applied to one input terminal while the other input terminal is grounded. The power supply available is 10V. To determine the required bias current I, derive an expression for the total voltage at each of the collectors in terms of VCC and I in the presence of the input signal. Then impose the condition that both transistors should remain well out of saturation with a minimum VCB of approximately 0V. Thus determine the required value of I. For this design ,what differential gain is achieved? What is the amplitude of the signal voltage obtained between the two collectors? Assume α≈1. Fall 2010 8 Homework #3 Solution Fall 2010 9