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2SB926 / 2SD1246 2SB926 / 2SD1246 Ordering number : EN1030F PNP / NPN Epitaxial Planar Silicon Transistors Large-Current Driving Applications Applications • Power supplies, relay drivers, lamp drivers, electrical equipment. Features • • • Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. Specifications ( ) : 2SB926 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit (--)30 Collector-to-Emitter Voltage VCBO VCEO (--)25 V Emitter-to-Base Voltage VEBO (--)6 V IC ICP (--)2 A Collector Current (Pulse) (--)5 A Collector Dissipation PC 0.75 W Collector Current Junction Temperature Tj Storage Temperature Tstg V 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(--)20V, IE=0A (--)0.1 µA Emitter Cutoff Current IEBO hFE1 VEB=(--)4V, IC=0A (--)0.1 µA VCE=(--)2V, IC=(--)100mA hFE2 VCE=(--)2V, IC=(--)1.5A, pulse fT Cob VCE=(--)10V, IC=(--)50mA DC Current Gain Gain-Bandwidth Product Output Capacitance VCB=(--)10V, f=1MHz 100* 65 560* 130 150 (32)19 MHz pF Continued on next page. * : The 2SB926 / 2SD1246 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 U 280 to 560 www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Publication Order Number: 2SB926_2SD1246/D 2SB926 / 2SD1246 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions min IC=(--)1.5A, IB=(--)75mA, pulse IC=(--)1.5A, IB=(--)75mA Unit typ max (--0.35)0.18 (--0.6)0.4 V (--)0.85 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO V V(BR)CEO IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ (--)30 Collector-to-Emitter Breakdown Voltage (--)25 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)6 V Package Dimensions unit : mm (typ) 7522-002 5.0 4.0 5.0 4.0 14.0 0.6 2.0 0.45 0.5 0.45 0.44 1 2 3 IC -- VCE 2SB926 From top --250mA --200mA --150mA --100mA --50mA --40mA --30mA --1.2 2SD1246 mA --10mA --8mA --6mA --0.8 --4mA --2mA --0.4 0 --200 --400 --600 --800 A 40m 20m 1.6 1.2 10mA 8mA 6mA 0.8 4mA 0.4 IB=0mA 0 30 A 0 --2 mA A --1.6 IC -- VCE 2.0 Collector Current, IC -- A --2.0 Collector Current, IC -- A SANYO : NP 1.3 50m 1.3 1 : Emitter 2 : Collector 3 : Base --1000 2mA IB=0mA 0 0 Collector-to-Emitter Voltage, VCE -- mVITR08779 Rev.0 I Page 2 of 4 I www.onsemi.com 200 400 600 800 1000 Collector-to-Emitter Voltage, VCE -- mVITR08780 2SB926 / 2SD1246 IC -- VBE VCE=2V 3 2SB 926 DC Current Gain, hFE 2.4 1.6 1.2 0.8 2SD 1246 2 2SB 926 100 7 5 3 2 10 0.4 For PNP, minus sign is omitted. 7 For PNP, 5 2 3 0.01 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 2 0.1 3 5 2 1.0 3 Collector Current, IC -- A 5 10 ITR08782 Cob -- VCB 2 f=1MHz 3 Output Capacitance, Cob -- pF 5 2SD1246 2 2SB926 100 7 5 3 100 7 5 2SB 926 3 2SD 124 2 6 2 For PNP, minus sign is omitted. 10 10 2 3 5 7 100 For PNP, minus sign is omitted. 2 3 5 7 1000 Collector Current, IC -- mA 2 10 1.0 3 Collector Current, IC -- A 5 3 2 26 B9 2S 1246 D 2S 3 2 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 10 IC=2A 2 DC 5 0.1 2 600 400 200 0 40 60 80 100 120 140 7 10 s s n 2SB926 / 2SD1246 For PNP, minus sign is omitted. 1ms to 100ms : Single pulse Ta=25°C ITR08785 Ambient Temperature, Ta -- °C m tio 2 800 750 20 0m op era 3 2SB926 / 2SD1246 0 10 1.0 PC -- Ta 1000 5 ITR08784 ASO 3 2 For PNP, minus sign is omitted. 7 0.01 3 ICP=5A 5 5 2 10 s 3 1.0 7 1m 5 3 2 0.01 5 10 5 5 3 Collector-to-Base Voltage, VCB -- V IC / IB=20 0.1 2 ITR08783 VCE(sat) -- IC 10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 VCE=10V 7 Collector Dissipation, PC -- mW minus sign is omitted. ITR08781 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz VCE=2V 7 5 2.0 hFE -- IC 1000 2.8 2SD1 246 Collector Current, IC -- A 3.2 160 ITR08786 Rev.0 I Page 3 of 4 I www.onsemi.com 3 5 7 1.0 2 3 5 2 3 5 Collector-to-Emitter Voltage, VCE -- V ITR08787 2SB926 / 2SD1246 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. SCILLC strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or malfunctions. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals," must be validated for each customer application by customer’s technical experts. SCILLC shall not be held liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affi rmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. % !" "& ' "" !"# $% & !!'" "'- ) * " #$&www.onsemi.com $%+ & & !'#'"# !!'((' ! ) * $%+ .& (" #-! "-! *& !'#'"# !!'((' # ) * $%+ ! ! & , .& ''##' ! Rev.0 I Page 4 of 4 I www.onsemi.com " & ./&++000+ * / 1 2/ 2SB926_2SD1246/D