Download datasheet for the QRD1114

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Transcript
QRD1113/1114
REFLECTIVE OBJECT SENSOR
PACKAGE DIMENSIONS
FEATURES
• Phototransistor Output
0.083 (2.11)
PIN 1 INDICATOR
• No contact surface sensing
OPTICAL
CENTERLINE
• Unfocused for sensing diffused surfaces
• Compact Package
0.240 (6.10)
0.120 (3.05)
• Daylight filter on sensor
0.173 (4.39)
0.183 (4.65)
NOTES
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning
agents.
4. Soldering iron 1/16” (1.6mm) from housing.
5. As long as leads are not under any spring tension.
6. D is the distance from the sensor face to the reflective surface.
7. Cross talk (ICX) is the collector current measured with the
indicator current on the input diode and with no reflective surface.
8. Measured using an Eastman Kodak neutral white test card with
90% diffused reflecting as a reflective surface.
0.500 (12.7)
MIN
0.020 (0.51)
SQ. (4X)
2
3
1
4
(Applies to Max Ratings and Characteristics Tables.)
0.100 (2.54)
0.083 (2.11)
SCHEMATIC
PIN 1 COLLECTOR
PIN 3 ANODE
PIN 2 EMITTER
PIN 4 CATHODE
2
3
1
4
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
3. Pins 2 and 4 typically .050” shorter than pins 1 and 3.
4. Dimensions controlled at housing surface.
ABSOLUTE MAXIMUM RATINGS
Parameter
(TA = 25°C unless otherwise specified)
Symbol
Rating
Units
Operating Temperature
TOPR
-40 to +85
°C
Storage Temperature
TSTG
-40 to +85
°C
TSOL-I
240 for 5 sec
°C
TSOL-F
260 for 10 sec
°C
EMITTER
Continuous Forward Current
IF
50
mA
Reverse Voltage
VR
5
V
mW
Lead Temperature (Solder Iron)(2,3)
Lead Temperature (Solder
Power
Dissipation(1)
Flow)(2,3)
PD
100
SENSOR
Collector-Emitter Voltage
VCEO
30
Emitter-Collector Voltage
VECO
Power Dissipation(1)
1 of 4
PD
V
V
100
mW
100030A
QRD1113/1114
REFLECTIVE OBJECT SENSOR
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
(TA = 25°C)
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
IF = 20 mA
VF
—
—
1.7
V
VR = 5 V
IR
—
—
100
µA
IF = 20 mA
!PE
—
940
—
nm
IC = 1 mA
BVCEO
30
—
—
V
IE = 0.1 mA
BVECO
5
—
—
V
Dark Current
VCE = 10 V, IF = 0 mA
ID
—
—
100
nA
COUPLED
IF = 20 mA, VCE = 5 V
IC(ON)
0.300
—
—
mA
IC(ON)
1
—
—
mA
VCE (SAT)
—
—
0.4
V
ICX
—
.200
10
µA
EMITTER
Forward Voltage
Reverse Current
Peak Emission Wavelength
SENSOR
Collector-Emitter Breakdown
Emitter-Collector Breakdown
QRD1113 Collector Current
QRD1114 Collector Current
Collector Emitter
Saturation Voltage
Cross Talk
D = .050”
(6,8)
IF = 20 mA, VCE = 5 V
D = .050”
(6,8)
IF = 40 mA, IC = 100 µA
D = .050”
UNITS
(6,8)
IF = 20 mA, VCE = 5 V, EE = 0
(7)
Rise Time
VCE = 5 V, RL = 100 "
tr
—
10
—
µs
Fall Time
IC(ON) = 5 mA
tf
—
50
—
µs
2 of 4
100030A
QRD1113/1114
REFLECTIVE OBJECT SENSOR
TYPICAL PERFORMANCE CURVES
Fig. 1 Forward Voltage vs.
Forward Current
Fig. 2 Normalized Collector Current vs.
Forward Current
10.0
IC - COLLECTOR CURRENT (mA)
VF - FORWARD VOLTAGE (mA)
1.40
1.20
1.00
0.20
0.60
0.40
1.0
IC - COLLECTOR CURRENT (mA)
1.60
Fig. 3 Normalized Collector Current vs.
Temperature
1.00
0.10
0.01
VCE = 5 V
D = .05"
1.0
0.1
10
100
0
IF - FORWARD CURRENT (mA)
0.6
0.4
IF = 10 mA
VCE = 5 V
0.2
0
.001
0.20
0.8
10
20
30
40
-50
50
IF - FORWARD CURRENT (mA)
Fig. 4 Normalized Collector Dark Current vs.
Temperature
-25
0
25
50
75
TA - AMBIENT TEMPERATURE (˚C)
Fig. 5 Normalized Collector Current vs.
Distance
NORMALIZED - COLLECTOR CURRENT (mA)
ID - COLLECTOR DARK CURRENT
102
VCE = 10 V
101
10
1.0
10-1
10-2
10-3
-50
-25
0
25
50
75
TA - AMBIENT TEMPERATURE (˚C)
3 of 4
1.0
.9
IF = 20 mA
VCE = 5 V
.8
.7
.6
.5
.4
.3
.2
.1
0
0
50
100
150
200
250
300
350
400
450
500
100
REFLECTIVE SURFACE DISTANCE (mils)
100030A
QRD1113/1114
REFLECTIVE OBJECT SENSOR
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
www.fairchildsemi.com
4 of 4
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
© 2000 Fairchild Semiconductor Corporation
100030A