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PR 099-2013/ROHM ROHM Semiconductor To Demonstrate Second Generation SiC MOSFETs at PCIM 2013 Expansion of high voltage N-channel SiC Power MOSFETs Line-up Willich-Münchheide/Nuremberg, May 14th 2013 - Adding to its broad range of SiC products, ROHM will present its new line-up expansion of highvoltage N-channel SiC (Silicon Carbide) Power MOSFETs at PCIM in Nuremberg (May 14-16, Hall 9, Booth 211). The SCT2xx series without Schottky diode features different ON-resistance types and max. currents in a TO247 package without an integrated SiC SBD. They provide significantly lower power loss and handle a maximum junction temperature of 175°C which is unmatched in the market. The SCH2080KEC variant comes co-packed with a SiC SBD in a single package. With low on-resistance, high breakdown voltage, high speed switching and reverse recovery these new MOSFETs (SCT2080KEC, SCH2080KEC, SCT2160KEC, SCT22280KEC and SCT2450KEC) are easy to parallel and to drive which makes them ideal for deployment in solar inverters, DC/DC converters, switch mode power supplies, induction heating or motor drives. Overall, these devices not only enable power saving and high speed operation but also the reduction of space and components, and can be configured based on customer requirements. Current Si IGBTs commonly used in 1200V-class inverters and converters cause power switching loss due to tail current or recovery of the external FRD, bringing a need for SiC power MOSFETs capable of operating with low switching loss at high frequencies. However, conventional SiC power MOSFETs experienced numerous reliability problems, including characteristic degradation due to body diode conduction (e.g. increased ON resistance, forward voltage, and resistance degradation) as well as failures of the gate oxide film, making full-scale integration impossible. ROHM has succeeded in overcoming these problems by improving processes related to crystal defects and device structure and reducing ON resistance per unit area by approximately 30% compared to conventional products, also leading to increased miniaturization. Key Features Low ON-resistance Minimal increase in ON-resistance during high-temperature operation Fast switching speed Fast reverse recovery Easy to drive Parallel Drain source voltage 1.200V Gate source voltage -6V to 22V Power dissipation (Tc = 25°C): 85 – 165W Junction Temperature: 175° C Storage temperature -55 to 175° C Availability The SCT2080KEC series and SCH2080KEC are available. About ROHM Semiconductor ROHM Semiconductor is a global company of 304,6 billion yen (3,8 Billion $) revenue with 21,295 employees in the last fiscal year ending March 2012. ROHM Semiconductor develops and manufactures a very large product range from the Ultra Low Power Microcontroller, Power Management, Standard ICs , SiC Diodes, Mosfets and Modules , Power Transistors and Diodes, LEDs to passives components such as Resistors, Tantalum Capacitors and LED display units, thermal Printheads in state-of-the-art manufacturing plants in Japan, Korea, Malaysia, Thailand, the Philippines, China and Europe. Lapis Semiconductor (former OKI Semiconductor), SiCrystal AG and Kionix are companies of ROHM Group. ROHM Semiconductor Europe has its head office near Dusseldorf serving the EMEA region (Europe, Middle East and Africa). For further information please contact www.rohm.com/eu Contact Information: ROHM Semiconductor GmbH Media Department Karl-Arnold-Str. 15 D-47877 Willich-Münchheide Germany Phone: +49 2154 921 0 Fax: +49 2154 921450 KEK Concept GmbH Evelyn Stepken Hofer Str. 1 D-81737 Munich Germany Phone: +49 89 673 461-30 Fax: +49 89 673 461-55 E-mail: [email protected] E-mail: [email protected] Caption: ROHM Semiconductor To Demonstrate Second Generation SiC MOSFETs at PCIM 2013