Download PR 092-2013/ROHM - KEK Concept GmbH

PR 092-2013/ROHM
The Industry’s First* Mass-Produced
SiC MOS Module Without a Schottky Diode
Reduced power loss makes it ideal for 1200V/180A inverters
* ROHM survey
Willich-Münchheide/Germany, February 19th 2013 – ROHM recently
announced that they have begun mass-production of 1200V/180A-rated SiC MOS
modules for inverters/converters used for industrial equipment, photovoltaic
power conditioners and the like. This new product is the first* module to
incorporate a power semiconductor comprised of just an SiC MOSFET, increasing
the rated current to 180A for broader applicability while contributing to lower
power consumption and greater compactness.
In March of 2012 ROHM was the first supplier in the industry to mass produce
1200V/100A ‘Full SiC’ modules that utilize SiC for all power semiconductor
elements. The goal was to balance the need for larger current handling capability
with a smaller form factor for industrial equipment and other applications.
Normally, increasing current rating entails integrating more MOSFET elements
and similar measures. However, this requires diode rectification, which makes it
extremely difficult to reduce or even maintain device size.
In response, ROHM has successfully developed an SiC power module utilizing 2nd
generation SiC MOSFET technology that minimizes conduction degradation of the
body diode, eliminating the need for a diode rectification. This makes it possible
to increase the mounting area for higher current handling capability while
maintaining the same compact form factor.
In addition, by improving processes and
device structures related to crystal defects
ROHM was able to overcome all problems
related to reliability, including the body
diode. The result is 50% less loss compared
with conventional Si IGBTs used in generalpurpose inverters. This decreased loss, along
with an operating frequency greater than
50kHz, ensures compatibility with smaller
peripheral components for greater endproduct miniaturization.
Key Features
1. Switching characteristics maintained using a simple MOS structure
for minimal switching loss with no tail current
Switching characteristics are
maintained even without an SBD.
And unlike Si IGBTs, no tail
current is generated, reducing
loss by more than 50% for
greater energy savings. In
addition, switching frequencies
over 50kHz are supported
(impossible with Si IGBTs),
contributing to smaller, lighter
peripheral devices.
2. Reverse conduction possible for high efficiency synchronous
rectification
General-purpose Si IGBT devices are not
capable of conduction in the reverse
direction. In contrast, the body diode in
ROHM’s SiC MOSFET always conducts in
reverse. Also, depending on the Gate
signal input the MOSFET can operate in
either direction for lower ON resistance vs.
using just the diode. These reverse
direction conduction characteristics allow
high efficiency synchronous rectification in the 1000+V range – higher than
diode rectification.
3. Body diode conduction degradation eliminated, enabling conduction
over 1000 hours with no performance loss
Clarifying the mechanism by which defects are
spread based on body diode conduction makes
it possible to minimize the primary factors
through process and device construction.With
general-purpose products the ON resistance
increases significantly after 20 hours. In
contrast, ROHM’s new module ensures no ON
resistance increases – even after more than
1000 hours.
Terminology
・Body diode
A parasitic diode formed on the MOSFET structure. During inverter operation
current flows through this diode, reducing VF – requiring fast recovery
characteristics.
・Tail current
Transient current that flows when an IGBT is turned OFF, generated due to the
accumulation time of injected holes. During this period the drain voltage is high,
increasing switching loss.
・IGBT (Insulated Gate Bipolar Transistor)
A type of power transistor that provides lower ON resistance through current flow
using both electrons and minority carriers (holes). However, a major drawback is
that high-speed operation is not possible due to the accumulation charge of
injected holes, resulting in significant switching loss.
・Forward voltage
The voltage value generated when current flows through the diode in the forward
direction. The lower the value the less the power consumption.
・ON resistance
The resistance value when the power element is in operation. This is considered
to be the most important parameter for a power MOSFET. The lower the value
the better the performance.
About ROHM Semiconductor
ROHM Semiconductor is a global company of 304,6 billion yen (3,8 Billion $)
revenue with 21,295 employees in the last fiscal year ending March 2012. ROHM
Semiconductor develops and manufactures a very large product range from the
Ultra Low Power Microcontroller, Power Management, Standard ICs , SiC Diodes,
Mosfets and Modules , Power Transistors and Diodes, LEDs to passives
components such as Resistors, Tantalum Capacitors and LED display units,
thermal Printheads in state-of-the-art manufacturing plants in Japan, Korea,
Malaysia, Thailand, the Philippines, China and Europe.
Lapis Semiconductor (former OKI Semiconductor), SiCrystal AG and Kionix are
companies of ROHM Group.
ROHM Semiconductor Europe has its head office near Dusseldorf serving the
EMEA region (Europe, Middle East and Africa). For further information please
contact www.rohm.com/eu
Contact Information:
ROHM Semiconductor GmbH
Media Department
Karl-Arnold-Str. 15
D-47877 Willich-Münchheide
Germany
Phone: +49 2154 921 0
Fax: +49 2154 921450
KEK Concept GmbH
Evelyn Stepken
Hofer Str. 1
D-81737 Munich
Germany
Phone: +49 89 673 461-30
Fax: +49 89 673 461-55
E-mail: [email protected]
E-mail: [email protected]
Caption:
The Industry’s First* Mass-Produced SiC MOS Module Without a Schottky Diode