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Transcript
PR 099-2013/ROHM
ROHM Semiconductor To Demonstrate Second
Generation SiC MOSFETs at PCIM 2013
Expansion of high voltage N-channel SiC Power MOSFETs Line-up
Willich-Münchheide/Nuremberg, May 14th 2013 - Adding to its broad
range of SiC products, ROHM will present its new line-up expansion of highvoltage N-channel SiC (Silicon Carbide) Power MOSFETs at PCIM in Nuremberg
(May 14-16, Hall 9, Booth 211). The SCT2xx series without Schottky diode
features different ON-resistance types and max. currents in a TO247 package
without an integrated SiC SBD. They provide significantly lower power loss and
handle a maximum junction temperature of 175°C which is unmatched in the
market. The SCH2080KEC variant comes co-packed with a SiC SBD in a single
package.
With low on-resistance, high breakdown voltage, high speed switching and
reverse recovery these new MOSFETs (SCT2080KEC, SCH2080KEC,
SCT2160KEC, SCT22280KEC and SCT2450KEC) are easy to parallel and to
drive which makes them ideal for deployment in solar inverters, DC/DC
converters, switch mode power supplies, induction heating or motor drives.
Overall, these devices not only enable power saving and high speed operation
but also the reduction of space and components, and can be configured based
on customer requirements.
Current Si IGBTs commonly used in 1200V-class inverters and converters
cause power switching loss due to tail current or recovery of the external FRD,
bringing a need for SiC power MOSFETs capable of operating with low
switching loss at high frequencies. However, conventional SiC power MOSFETs
experienced numerous reliability problems, including characteristic degradation
due to body diode conduction (e.g. increased ON resistance, forward voltage,
and resistance degradation) as well as failures of the gate oxide film, making
full-scale integration impossible. ROHM has succeeded in overcoming these
problems by improving processes related to crystal defects and device
structure and reducing ON resistance per unit area by approximately 30%
compared to conventional products, also leading to increased miniaturization.
Key Features

Low ON-resistance

Minimal increase in ON-resistance during high-temperature operation

Fast switching speed

Fast reverse recovery

Easy to drive Parallel

Drain source voltage 1.200V

Gate source voltage -6V to 22V

Power dissipation (Tc = 25°C): 85 – 165W

Junction Temperature: 175° C

Storage temperature -55 to 175° C
Availability
The SCT2080KEC series and SCH2080KEC are available.
About ROHM Semiconductor
ROHM Semiconductor is a global company of 304,6 billion yen (3,8 Billion $)
revenue with 21,295 employees in the last fiscal year ending March 2012.
ROHM Semiconductor develops and manufactures a very large product range
from the Ultra Low Power Microcontroller, Power Management, Standard ICs ,
SiC Diodes, Mosfets and Modules , Power Transistors and Diodes, LEDs to
passives components such as Resistors, Tantalum Capacitors and LED display
units, thermal Printheads in state-of-the-art manufacturing plants in Japan,
Korea, Malaysia, Thailand, the Philippines, China and Europe.
Lapis Semiconductor (former OKI Semiconductor), SiCrystal AG and Kionix are
companies of ROHM Group.
ROHM Semiconductor Europe has its head office near Dusseldorf serving the
EMEA region (Europe, Middle East and Africa). For further information please
contact www.rohm.com/eu
Contact Information:
ROHM Semiconductor GmbH
Media Department
Karl-Arnold-Str. 15
D-47877 Willich-Münchheide
Germany
Phone: +49 2154 921 0
Fax: +49 2154 921450
KEK Concept GmbH
Evelyn Stepken
Hofer Str. 1
D-81737 Munich
Germany
Phone: +49 89 673 461-30
Fax: +49 89 673 461-55
E-mail: [email protected]
E-mail: [email protected]
Caption:
ROHM Semiconductor To Demonstrate Second Generation SiC MOSFETs at
PCIM 2013