Download MTP1N60E Power MOSFET 1 Amp, 600 Volts

MTP1N60E
Preferred Device
Power MOSFET
1 Amp, 600 Volts
N−Channel TO−220
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, the MOSFET is designed to
withstand high energy in the avalanche and commutation modes. The
new energy efficient design also offers a drain−to−source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
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1 AMPERE
600 VOLTS
RDS(on) = 8 Ω
N−Channel
D
G
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−Source Voltage
VDSS
600
Vdc
Drain−Gate Voltage (RGS = 1.0 MΩ)
VDGR
600
Vdc
Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
ID
ID
1.0
0.8
3.0
Adc
50
0.4
Watts
W/°C
TJ, Tstg
−55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 3.0 Apk, L = 10 mH, RG = 25 Ω)
EAS
45
mJ
Thermal Resistance − Junction to Case
Thermal Resistance − Junction to Ambient
RθJC
RθJA
2.50
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Rating
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
IDM
PD
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
TO−220AB
CASE 221A
STYLE 5
Apk
1
2
MTP1N60E
LLYWW
1
Gate
3
3
Source
2
Drain
MTP1N60E
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
MTP1N60E
Package
Shipping
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. XXX
1
Publication Order Number:
MTP1N60E/D
MTP1N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
600
−
−
689
−
−
Vdc
mV/°C
−
−
−
−
10
100
−
−
100
nAdc
2.0
−
3.0
7.1
4.0
−
Vdc
mV/°C
−
5.9
8.0
Ohm
−
−
6.4
−
9.6
8.4
gFS
0.5
0.8
−
mhos
Ciss
−
224
310
pF
Coss
−
27
40
Crss
−
6.0
10
td(on)
−
8.8
17.6
tr
−
6.8
13.6
td(off)
−
15
30
tf
−
20
40
QT
−
7.1
10
Q1
−
1.7
−
Q2
−
3.2
−
Q3
−
3.9
−
−
−
0.82
0.7
1.4
−
trr
−
464
−
ta
−
36
−
tb
−
428
−
QRR
−
0.629
−
−
−
3.5
4.5
−
−
−
7.5
−
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
µAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 0.5 Adc)
RDS(on)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125°C)
VDS(on)
Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
(VDD = 300 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
Vdc
RG = 9.1 Ω)
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(S Figure
(See
Fi
8)
(VDS = 300 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc)
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1.)
(IS = 1.0 Adc, VGS = 0 Vdc)
(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(S Figure
(See
Fi
14)
(IS = 1.0
1 0 Adc,
Adc VGS = 0 Vdc,
Vdc
dIS/dt = 100 A/µs)
Reverse Recovery Stored
Charge
VSD
Vdc
ns
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
nH
nH
MTP1N60E
MTP1N60
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 25°C
1.6
6V
1.4
1.2
1
0.8
0.6
5V
0.4
0.2
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
0
1.6
1.2
0.8
0.4
TJ = − 55°C
0
2
4
6
8
10
12
14
16
18
0
20
3.6
4
4.8
4.4
5.6
5.2
6
Figure 2. Transfer Characteristics
TJ = 100°C
10
8
25°C
6
4
− 55°C
2
0.2
0.6
1
0.8
1.2 1.4
ID, DRAIN CURRENT (AMPS)
0.4
1.6
1.8
2
6.4 6.8
9
TJ = 25°C
8.5
8
7.5
7
VGS = 10 V
6.5
15 V
6
5.5
5
0.2
0
0.4
0.6
1
0.8
1.2 1.4
ID, DRAIN CURRENT (AMPS)
1.6
1.8
2
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.4
1000
VGS = 0 V
VGS = 10 V
ID = 0.5 A
I DSS , LEAKAGE (nA)
2
3.2
Figure 1. On−Region Characteristics
12
0
2.8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VGS = 10 V
14
2.4
2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus Drain Current
and Temperature
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
25°C
100°C
4V
16
0
VDS ≥ 10 V
7V
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
I D , DRAIN CURRENT (AMPS)
2
VGS = 10 V
I D , DRAIN CURRENT (AMPS)
2
1.8
1.6
1.2
0.8
TJ = 125°C
100°C
100
10
25°C
0.4
0
− 50
− 25
0
25
50
75
100
125
1
150
0
100
200
300
400
500
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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3
600
MTP1N60E
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (∆t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the off−state condition when
calculating td(on) and is read at a voltage corresponding to the
on−state when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
t = Q/IG(AV)
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG − VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn−on and turn−off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG − VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
500
VDS = 0 V
450
1000
TJ = 25°C
VGS = 0 V
TJ = 25°C
Ciss
400
350
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
VGS = 0 V
300
250
Ciss
Crss
200
150
100
100
10
Crss
0
10
5
0
VGS
5
10
15
20
1
10
25
Coss
Crss
Coss
50
Ciss
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7b. High Voltage Capacitance
Variation
Figure 7a. Capacitance Variation
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4
1000
600
QT
10
500
VGS
8
Q1
400
Q2
6
ID = 1 A
TJ = 25°C
300
200
4
2
100
Q3
0
0
1
2
VDS
3
4
5
6
7
8
0
MTP1N60
100
VDD = 300 V
ID = 1 A
VGS = 10 V
TJ = 25°C
t, TIME (ns)
12
VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
MTP1N60E
tf
td(off)
10
td(on)
tr
1
1
10
QT, TOTAL CHARGE (nC)
RG, GATE RESISTANCE (OHMS)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
100
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
I S , SOURCE CURRENT (AMPS)
1
VGS = 0 V
TJ = 25°C
0.8
0.6
0.4
0.2
0
0.5
0.54
0.58
0.66
0.62
0.7
0.74
0.78
0.82
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed
in
AN569,
“Transient
Thermal
Resistance−General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 µs. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RθJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
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MTP1N60E
SAFE OPERATING AREA
I D , DRAIN CURRENT (AMPS)
VGS = 20 V
SINGLE PULSE
TC = 25°C
1
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
50
10
10 µs
100 µs
0.1
1 ms
dc
10 ms
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.001
1
0.1
100
10
ID = 1 A
40
30
20
10
0
1000
25
50
75
100
150
125
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E−05
t1
t2
DUTY CYCLE, D = t1/t2
1.0E−04
1.0E−03
1.0E−02
t, TIME (s)
1.0E−01
Figure 13. Thermal Response
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
Figure 14. Diode Reverse Recovery Waveform
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RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
1.0E+00
1.0E+01
MTP1N60E
MTP1N60
PACKAGE DIMENSIONS
TO−220 THREE−LEAD
TO−220AB
CASE 221A−09
ISSUE AA
SEATING
PLANE
−T−
B
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 5:
PIN 1.
2.
3.
4.
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7
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
MTP1N60E
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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MTP1N60E/D