Download Medium-Power Plastic NPN Silicon Transistors

2N4921G, 2N4922G,
2N4923G
Medium-Power Plastic
NPN Silicon Transistors
These high−performance plastic devices are designed for driver
circuits, switching, and amplifier applications.
Features
•
•
•
•
•
www.onsemi.com
1.0 AMPERE
GENERAL PURPOSE
POWER TRANSISTORS
40−80 VOLTS, 30 WATTS
Low Saturation Voltage
Excellent Power Dissipation
Excellent Safe Operating Area
Complement to PNP 2N4920G
These Devices are Pb−Free and are RoHS Compliant**
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N4921G
2N4922G
2N4923G
VCEO
Collector−Emitter Voltage
2N4921G
2N4922G
2N4923G
VCB
Emitter Base Voltage
VEB
5.0
Vdc
IC
1.0
Adc
ICM
3.0
Adc
Base Current − Continuous
IB
1.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
30
0.24
W
mW/_C
–65 to +150
_C
Collector Current − Continuous (Note 1)
Collector Current − Peak (Note 1)
Operating and Storage Junction
Temperature Range
TJ, Tstg
40
60
80
1
EMITTER
Vdc
40
60
80
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements.
The 3.0 A maximum value is based upon actual current handling capability of
the device (see Figures 5 and 6).
THERMAL CHARACTERISTICS (Note 2)
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Max
Unit
RqJC
4.16
_C/W
2. Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
January, 2017 − Rev. 15
3
BASE
Vdc
1
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
YWW
2
N492xG
Y
= Year
WW
= Work Week
2N492x = Device Code
x = 1, 2, or 3
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
2N4921G
TO−225
(Pb−Free)
500 Units / Box
2N4922G
TO−225
(Pb−Free)
500 Units / Box
2N4923G
TO−225
(Pb−Free)
500 Units / Box
Publication Order Number:
2N4921/D
2N4921G, 2N4922G, 2N4923G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 0.1 Adc, IB = 0)
2N4921G
2N4922G
2N4923G
Vdc
40
60
80
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N4921G
(VCE = 30 Vdc, IB = 0)
2N4922G
(VCE = 40 Vdc, IB = 0)
2N4923G
ICEO
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C
ICEX
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
−
−
−
mAdc
−
0.5
−
0.5
−
0.5
−
−
0.1
0.5
−
0.1
−
1.0
40
30
10
−
150
−
−
0.6
−
1.3
−
1.3
3.0
−
−
100
25
−
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE
Collector−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
Base−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
Base−Emitter On Voltage (Note 3)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
−
Vdc
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
Small−Signal Current Gain
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
MHz
pF
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%.
www.onsemi.com
2
2N4921G, 2N4922G, 2N4923G
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
25
50
75
100
TC, CASE TEMPERATURE (°C)
125
150
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
APPROX
+11 V
TURN-ON PULSE
t1
VCC
RC
Vin
Vin
VBE(off)
RB
Cjd<<Ceb
t3
APPROX
+11 V
-4.0 V
SCOPE
t1 ≤ 15 ns
100 < t2 ≤ 500 ms
t3 ≤ 15 ns
Vin
APPROX 9.0 V
t2
TURN-OFF PULSE
DUTY CYCLE ≈ 2.0%
RB and RC varied to
obtain desired
current levels
Figure 2. Switching Time Equivalent Circuit
5.0
VCC = 30 V
IC/IB = 20
3.0
IC/IB = 10, UNLESS NOTED
TJ = 25°C
TJ = 150°C
VCC = 60 V
t, TIME (s)
μ
2.0
1.0
0.7
0.5
tr
VCC = 30 V
0.3
0.2
0.1
0.07
0.05
td
VCC = 60 V
VBE(off) = 2.0 V
VCC = 30 V
VBE(off) = 0
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 3. Turn−On Time
www.onsemi.com
3
500 700 1000
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
2N4921G, 2N4922G, 2N4923G
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.03
P(pk)
qJC(t) = r(t) qJC
qJC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) qJC(t)
DUTY CYCLE, D = t1/t2
0.1
0.05
0.01
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
IC, COLLECTOR CURRENT (AMP)
Figure 4. Thermal Response
10
7.0
5.0
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) ≤ 150_C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
100 ms
1.0 ms
3.0
2.0
TJ = 150°C
1.0
0.7
0.5
dc
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
PULSE CURVES APPLY BELOW
RATED VCEO
0.3
0.2
0.1
1.0
2.0 3.0
5.0 7.0 10
20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70
100
Figure 5. Active−Region Safe Operating Area
5.0
5.0
3.0
3.0
IC/IB = 20
t f , FALL TIME (s)
μ
t s′, STORAGE TIME (s)
μ
1.0
0.7
0.5
IC/IB = 10
0.3
0.2
0.1
0.07
0.05
IC/IB = 20
2.0
2.0
IC/IB = 20
TJ = 25°C
TJ = 150°C
IB1 = IB2
ts′ = ts - 1/8 tf
10
20
30
200 300
50 70 100
IC, COLLECTOR CURRENT (mA)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
500 700 1000
IC/IB = 10
TJ = 25°C
TJ = 150°C
VCC = 30 V
IB1 = IB2
10
Figure 6. Storage Time
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
www.onsemi.com
4
500 700 1000
hFE, DC CURRENT GAIN
1000
700
500
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2N4921G, 2N4922G, 2N4923G
VCE = 1.0 V
300
200
TJ = 150°C
100
70
50
25°C
-55°C
30
20
10
2.0 3.0 5.0
10
20 30 50 100 200 300 500
IC, COLLECTOR CURRENT (mA)
1000 2000
1.0
0.8
108
1.0 A
TJ = 25°C
0.4
0.2
0
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10 20 30
IB, BASE CURRENT (mA)
50
100
200
1.5
IC = 10 x ICES
VCE = 30 V
TJ = 25°C
107
1.2
IC = 2 x ICES
VOLTAGE (VOLTS)
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
0.5 A
Figure 9. Collector Saturation Region
106
IC ≈ ICES
105
ICES VALUES
OBTAINED FROM
FIGURE 12
104
30
0
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
60
90
120
VCE(sat) @ IC/IB = 10
0
10
20 30 50
2.0 3.0 5.0
150
100 200 300 500
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Figure 10. Effects of Base−Emitter Resistance
Figure 11. “On” Voltage
104
TJ = 150°C
103
100°C
102
25°C
101
IC = ICES
100
VCE = 30 V
10-1
10-2
-0.2
1000 2000
+2.5
REVERSE
-0.1
FORWARD
0
+0.1
+0.2
+0.3
+0.4
TEMPERATURE COEFFICIENTS (mV/ °C)
IC, COLLECTOR CURRENT (A)
μ
0.25 A
0.6
Figure 8. Current Gain
103
IC = 0.1 A
+2.0
*APPLIES FOR IC/IB ≤
+1.5
+1.0
TJ = 100°C to 150°C
+0.5
*qVC FOR VCE(sat)
0
-55°C to +100°C
-0.5
-1.0
-1.5
qVB FOR VBE
-2.0
-2.5
2.0 3.0 5.0
+0.5
hFE@VCE + 1.0V
2
VBE, BASE-EMITTER VOLTAGE (VOLTS)
10
20 30
50
100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut−Off Region
Figure 13. Temperature Coefficients
www.onsemi.com
5
1000 2000
2N4921G, 2N4922G, 2N4923G
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AD
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
E
A1
Q
A
PIN 4
BACKSIDE TAB
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
D
P
1
2
3
L1
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
L
4
2X
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
3 2
1
1 2
3
FRONT VIEW
BACK VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
◊
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
2N4921/D