Download Flexible active-matrix displays and shift registers based on solution

Jack Kilby's first integrated circuit 1958
Itanium 2, 592000000 transistors
Coulomb blockade and the Kondo effect in single-atom transistors, Jiwoong Park, Abhay N.
Pasupathy, Jonas I. Goldsmith, Connie Chang, Yuval Yaish, Jason R. Petta, Marie Rinkoski, James P.
Sethna, Héctor D. Abruña, Paul L. McEuen, and Daniel C. Ralph, Nature 417 p. 722 (2002).
Nanotube transistor
40 mA/mm
Flexible active-matrix displays
and shift registers based on
solution-processed organic
transistors, G. H. Gelinck, H.
Edzer A. Huitema, E. Van
Veenendaal, E. Cantatore, L.
Schrijnemakers, J. B. P. H. Van
Der Putten, T. C. T. Geuns, M.
Beenakkers, J. B. Giesbers, B.H. Huisman, E. J. Meijer, E.
Mena Benito, F. J. Touwslager,
A. W. Marsman, B. J. E. Van
Rens and D. M. de Leeuw,
Nature Materials 3, pp.106110 (2004) doi:
10.1038/nmat1061.
Molecular Electronics and Devices
Molecular memories
rotaxane
Gating of a Molecular Transistor: Electrostatic and Conformational
Avik W. Ghosh, Titash Rakshit, and Supriyo Datta
Nanoletters April 14, 2004 pp 565 - 568;
Bottom-up electronics
•Allows atomic precision in device fabrication
•Chemical synthesis is the ultimate form of mass
production
•Incorporate complexity to circuits at low cost
New guiding principle for electronics:
Start with atomically precise components, and build
increasingly complex circuits by chemical synthesis.
Self-assembly of electronic ink
memories
Volatile
DRAM, SRAM
Density - speed
Non-volatile
Magnetic, flash, molecular
Large-scale applications
Lighting – Philips nanowires
Solar cells – nanosys makes solar cells
Displays
labels RFID
Perspective
•It will not be possible to make transistors with similar
characteristics to CMOS transistors that are
significantly smaller than CMOS transistors.
•Exotic devices (single-electron transistors, spintronics,
interference devices) are impractical.
•The miniaturization of electronic circuits will end with
CMOS.
Output impedance
1E10
DNA
C60
output impedance W
1E8
Tans
Si nanowire
1E6
SET NEC
Bachtold
1 MW/mm
1E4
1 kW/mm
Intel
100
Schön
1
1E-6
1E-7
1E-8
Source-drain distance [m]
1E-9
Ion/Ioff = 66
Conformational Molecular Rectifiers
Alessandro Troisi and Mark A. Ratner
Nanoletters April 14, 2004 pp 591 - 595;