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Transcript
< HVIGBT MODULE >
CMH1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
CMH1200DC-34S







I C ································································ 1200A
V CES ·························································· 1700V
2-element in a Pack
Insulated Type
CSTBT™
SiC Schottky-Barrier Diode
AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Mar. 2013 (HVM-1066-C)
Dimensions in mm
1
< HVIGBT MODULE >
CMH1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
MAXIMUM RATINGS
Symbol
V CES
V GES
IC
I CRM
IE
I ERM
I2t
P tot
V iso
T jop
T stg
t psc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Surge current load integral
Maximum power dissipation (Note 3)
Isolation voltage
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
V GE = 0V
V CE = 0V, T j = 25°C
DC, T c = 110°C
Pulse
DC
Pulse
T j = 125°C, V R = 0V, t p = 10ms
T c = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
Ratings
1700
±20
1200
2400
1200
2400
—
6750
4000
−50 ~ +150
−50 ~ +150
10
(Note 1)
(Note 1)
V CC = 1200 V, V CE ≤ V CES , V GE = 15V, T j = 150°C
Unit
V
V
A
A
A
A
kA2s
W
V
°C
°C
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
T j = 25°C
T j = 125°C
T j = 150°C
I CES
Collector cutoff current
V CE = V CES , V GE = 0V
V GE(th)
I GES
C ies
C oes
C res
QG
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
V CE = 10V, I C = 120mA, T j = 25°C
V GE = V GES , V CE = 0V, T j = 25°C
V CEsat
Collector-emitter saturation voltage
t d(on)
Turn-on delay time
tr
Turn-on rise time
E on
Turn-on switching energy
t d(off)
Turn-off delay time
tf
Turn-off fall time
E off
Turn-off switching energy
(Note 5)
V EC
Emitter-collector voltage
(Note 2)
QC
Total capacitive charge
Mar. 2013 (HVM-1066-C)
V CE = 10V, V GE = 0V, f = 100kHz
T j = 25°C
V CC = 850V, I C = 1200A, V GE = 15V
(Note 5)
(Note 2,6)
I C = 1200 A
V GE = 15 V
(Note 4)
V CC = 850 V
I C = 1200 A
V GE = ±15 V
R G(on) = 1.3 Ω
L s = 100 nH
Inductive load
V CC = 850 V
I C = 1200 A
V GE = ±15 V
R G(off) = 3.3 Ω
L s = 100 nH
Inductive load
I E = 1200A
V GE = 0V
(Note 4)
V CC = 850V, I E = 1200 A
R G(on) = 1.3Ω, L s = 100 nH
2
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
Tj
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
Min
—
—
—
—
−0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
36
150
180
6.0
—
216
8.0
1.6
12.0
1.95
2.25
2.30
0.50
0.50
0.50
0.14
0.15
0.15
110
135
140
1.25
1.35
1.35
0.30
0.55
0.60
250
370
390
1.60
2.20
2.30
5.0
8.5
9.0
Max
—
—
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
mJ
µs
µs
mJ
V
µC
< HVIGBT MODULE >
CMH1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
THERMAL CHARACTERISTICS
Symbol
Item
R th(j-c)Q
R th(j-c)D
Thermal resistance
R th(c-s)
Contact thermal resistance
Conditions
Junction to Case, IGBT part, 1/2 module
Junction to Case, FWDi part, 1/2 module
Case to heat sink, 1/2 module
λ grease = 1W/m·k, D (c-s) = 100µm
Min
—
—
Limits
Typ
—
—
Max
18.5
36.0
K/kW
K/kW
—
16.0
—
K/kW
Min
7.0
3.0
1.0
—
600
9.5
15.0
—
—
Limits
Typ
—
—
—
0.8
—
—
—
30.0
0.28
Max
20.0
6.0
3.0
—
—
—
—
—
—
Unit
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Mt
m
CTI
da
ds
L P CE
R CC’+EE’
Note1.
2.
3.
4.
5.
6.
Item
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Conditions
Main terminals screw
Mounting screw
Auxiliary terminals screw
1/2 module
T c = 25°C, 1/2 module
Pulse width and repetition rate should be such that junction temperature (T j ) does not exceed T jopmax rating.
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (T j ) should not exceed T jmax rating.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Definition of all items is according to IEC 60747, unless otherwise specified.
Capacitive charge during anti-paralleled FWDi’s turn-off operation.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Mar. 2013 (HVM-1066-C)
3
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
< HVIGBT MODULE >
CMH1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2500
2500
Tj = 125°C
VCE = 10V
VGE = 17V
2000
VGE = 11V
VGE = 15V
1500
Collector Current [A]
2000
Collector Current [A]
TRANSFER CHARACTERISTICS
(TYPICAL)
VGE = 13V
VGE = 9V
1000
500
1500
Tj = 125°C / 150°C
1000
Tj = 25°C
500
0
0
0
1
2
3
4
5
6
0
Collector - Emitter Voltage [V]
5
10
15
Gate - Emitter Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
2500
2500
VGE = 15V
Tj = 125°C
2000
Tj = 25°C
Emitter Current [A]
Collector Current [A]
2000
Tj = 150°C
1500
1000
500
Tj = 150°C
Tj = 25°C
1500
Tj = 125°C
1000
500
0
0
1
2
3
0
4
0
2
3
Emitter-Collector Voltage [V]
Collector-Emitter Saturation Voltage [V]
Mar. 2013 (HVM-1066-C)
1
4
4
< HVIGBT MODULE >
CMH1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
1000
Cies
15
Gate-Emitter Voltage [V]
100
Capacitance [nF]
VCE = 850V, IC = 1200A
Tj = 25°C
10
Coes
1
Cres
10
5
0
-5
-10
VGE = 0V, Tj = 25°C
f = 100kHz
0.1
-15
0.1
1
10
100
0
5
15
Gate Charge [µC]
Collector-Emitter Voltage [V]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
2.0
1.2
VCC = 850V, VGE = ±15V
RG(on) = 1.3Ω, RG(off) = 3.3Ω
Tj = 150°C, Inductive load
1.0
VCC = 850V, IC = 1200A
VGE = ±15V, Tj = 150°C
Inductive load
Eoff
Switching Energies [J]
Switching Energies [J]
10
0.8
0.6
0.4
Eon
1.5
Eon
1.0
Eoff
0.5
0.2
0.0
0.0
0
500
1000
1500
2000
2500
0
Collector Current [A]
Mar. 2013 (HVM-1066-C)
5
10
15
Gate Resistance [Ω]
5
20
< HVIGBT MODULE >
CMH1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
REVERSE BIAS
SAFE OPERATING AREA (RBSOA)
10
3000
VCC ≤ 1200V, VGE = ±15V
Tj = 150°C, RG(off) ≥ 3.3Ω
VCC = 850V, VGE = ±15V
RG(on) = 1.3Ω, RG(off) = 3.3Ω
Tj = 150°C, Inductive load
2500
1
2000
Collector Current [A]
Switching Times [µs]
td(off)
tf
td(on)
1500
0.1
1000
tr
500
0.01
100
1000
10000
0
0
Collector Current [A]
500
1000 Voltage
1500
Collector-Emitter
[V]
2000
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
Normalized Transient Thermal impedance
1.2
Rth(j-c)Q = 18.5K/kW
Rth(j-c)D = 36.0K/kW
1
Z
0.8
(t ) =
th( j − c )
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
Time [s]
Mar. 2013 (HVM-1066-C)
6
n


i

∑ R 1−exp
i =1
 t 
− 


i 

τ

1
2
3
4
R i [K/kW]
0.0096
0.1893
0.4044
0.3967
t i [sec]
0.0001
0.0058
0.0602
0.3512
< HVIGBT MODULE >
CMH1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Mar. 2013 (HVM-1066-C)
7