Download ESD Pitfalls of Third Party IP

Survey
yes no Was this document useful for you?
   Thank you for your participation!

* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project

Document related concepts

Radio transmitter design wikipedia , lookup

Josephson voltage standard wikipedia , lookup

Integrated circuit wikipedia , lookup

UniPro protocol stack wikipedia , lookup

Operational amplifier wikipedia , lookup

Schmitt trigger wikipedia , lookup

Ohm's law wikipedia , lookup

Multimeter wikipedia , lookup

Immunity-aware programming wikipedia , lookup

Automatic test equipment wikipedia , lookup

Voltage regulator wikipedia , lookup

Power electronics wikipedia , lookup

Valve RF amplifier wikipedia , lookup

Current mirror wikipedia , lookup

Power MOSFET wikipedia , lookup

Resistive opto-isolator wikipedia , lookup

Rectiverter wikipedia , lookup

CMOS wikipedia , lookup

Switched-mode power supply wikipedia , lookup

Surge protector wikipedia , lookup

Opto-isolator wikipedia , lookup

Transcript
ESD for the Fabless
Semiconductor Company
Golden Rules of ESD Due Diligence
for Third Party Intellectual Property
By Rosario Consiglio, Impulse Semiconductor 2006
Rule #1
It is never too early to make ESD
planning is part of your design flow.
Frequent ESD Management Pitfalls




Insufficient time is allowed for IP vendors to
correct ESD oversights and errors
Checking ESD after package design is frozen
(big problem with flip-chip designs)
Putting off an ESD review until after first
silicon reveals a problem
Putting off the first ESD review until just days
before tape out
Frequent ESD Problem Areas







Low voltage I/O
Low voltage PLL blocks
High speed reference clock blocks
5 volt tolerant designs on using LV CMOS
All analog IP without specifically designed I/O
More than three power supply domains
Power management circuits
Rule #2
The Wafer Foundry will never provide
all the ESD support you need.
Rule #2 Comments





Wafer Foundry ESD expertise is usually weighted in
device design rather than ESD applications
Foundry application guidelines and datasheets only
cover 1-2 basic applications (ESD NMOST, PMOST)
Most Layout ESD and latchup rules are only checked
manually
CAD design rule checks, LVS do not include ESD
checks
Ask how the Foundry qualifies IP vendors
Rule # 3
The Integrated ESD level for the
whole IC is always less than the sum
of its third party IP parts.
Rule #3 Comments



IP vendors may try, but cannot anticipate all
ESD application problems with their products
Independent IP providers judge ESD
performance of their individual PHY based on
their respective test chip results
IP vender “A” will not guarantee their ESD
circuits will protect IP from vendor “B”
Hypothetical IC Layout Example
2
K
500
500
PLL
Vendor
E
6000
2000
AFE section
Vendor A
Digi
tal
I/O
Ven
dor
C
Digital SRAM Core
Vendor D
CLK
SQR
4K
Digital I/O
Vendor B
8000
7K
ESD Integration Issues




Due to required pin combinations, certain ESD
discharge paths may be very resistive
Voltage drops on any particular path may be
excessive
ESD clamps from IP vendor “A” may be
incompatible with IP from vendor “B”
Insufficient isolation between IP block may
result in excessive noise and Latchup
Important IP ESD Information





A test report indicating 2KV HBM, 200V MM,
500V CDM is helpful but insufficient by itself
Know Pass diode resistance
Knowledge of ESD clamp dynamic resistance
or ESD clamping voltage for protection
elements
Know I/O cell metal layer composition, and
number of squares to compute resistance
Signal buffering/Pi network configuration
Possible IC Power Domains
9 sq
32 sq
I/O clamp
M=2
9 sq
3.2 sq
clamp
6.1 sq vdd
22 sq
vdd
6.1 sq
vdd
2.2 sq vdd
VDD is outer ring
28 sq
vdd
3.2 sq
clamp
2.2 sq vdd
VDD
17.5 sq vdd
28 sq vdd
25.6
sq
I/O clamp
M=4
VSS is the outer ring
I/O
41 sq
41 sq
Modeling of Core Interconnect May
be Necessary for Accurate Estimates
Rule #4
Seek out test data, ask questions.
Test Data From IP Vendors




Independent Lab reports for HBM, MM, CDM
results.
Transmission line pulse I/V for ESD clamps
ESD parameters extracted from TLP
measurements for wafer foundry processes
Latchup current values for different I/O types
over temperature
IP Provider ESD Design Queries



ESD device clamping voltages at 1.5
amps/100ns – is it compatible with wafer
foundry ESD limits?
Noise isolation techniques – is the pass diode
voltage drop less than wafer foundry technology
limits?
Is the metalization wide enough for low voltage
drops?
IP Provider Design Margins Queries
continued




Are there antenna diodes for internal buffers,
supply lines and long signal paths?
What analog signals are routed directly to I/O?
What is the input Pi network?
What foundry data used to design ESD
structures?
Foundry ESD/latchup parameters






Secondary breakdown currents and voltages for
ESD layouts
Worst case Oxide breakdown statistics
Resistor (poly, diffusion) current carrying
capacities
Metalization current carrying capacities
Via, contact current carrrying capacities
Does the Foundry have data from SEMATECH
standard ESD evaluation structures?
SEMATECH Foundry TLP
Benchmarking Structures
Courtesy of Sematech