Download TO-3 Internal Schematic Diagram Absolute Maximum Ratings

1165900
High power NPN silicon transistors.
Features:
•
•
•
•
NPN transistor.
High voltage capability.
High current capability.
Fast switching speed.
Applications:
Switch mode power supplies.
Flyback and forward single transistor low power converters.
TO-3
Description:
The BUV48A are silicon Multiepitaxial Mesa NPN transistors mounted respectively in TO-3
fully isolated package. They are particulary intended for switching and industrial applications
from single and three-phase mains.
Internal Schematic Diagram
For TO-3 Package
Absolute Maximum Ratings
Parameter
Symbol
Value
Collector-Emitter Voltage (RBE = 10Ω)
VCER
Collector-Emitter Voltage (VBE = 0)
VCES
Collector-Emitter Voltage (IB = 0)
VCEO
450
Emitter-Base Voltage (IC = 0)
VEBO
7
IC
15
Collector Peak Current
ICM
30
Collector Peak Current Non Repetitive (tp <20µs)
ICP
55
Base Current
IB
4
Base Peak Current
IBM
20
Total Dissipation at TC = 25°C
Ptot
175
Storage Temperature
Tstg
-65 to 200
Tj
200
Collector Current
Maximum Operating Junction Temperature
Unit
1000
V
A
W
°C
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1165900
Thermal Data
Rthj-case
Maximum Thermal Resistance Junction-case
Electrical Characteristics
1
°C/W
(Tcase = 25°C unless otherwise specified)
Parameter
Test Conditions
Collector Cut-off Current (VBE = 0)
VCE = rated VCES
VCE = rated VCES,
TC = 125°C
Collector Cut-off Current (RBE = 10Ω)
VCE = rated VCER
VCE = rated VCER,
TC = 125°C
Emitter Cut-off Current (IC = 0)
VEB = 5V
Collector-Emitter Sustaining Voltage (IB = 0)
IC = 200mA L = 25mH BUX48A
Emitter-Base Voltage (IC = 0)
IE = 50mA
Collector-Emitter Saturation Voltage
IC = 8A
IC = 12A
IB = 1.6A
IB = 2.4A
BUX48A
Base-Emitter Saturation Voltage
IC = 8A
IB = 1.6A
BUX48A
Symbol
Minimum
Maximum
Unit
ICES
-
200
2
µA
mA
ICER
-
500
4
µA
mA
IEBO
-
1
mA
VCEO (sus)*
450
-
VEBO
7
30
VCE (sat)*
-
1.5
5
VBE (sat)*
-
1.6
Symbol
Minimum
Maximum
ton
-
1
ts
-
3
tf
-
0.8
V
*Pulsed: Pulse Duration = 300µs, Duty Cycle ≤2%
Resistive Switching Times
Parameter
Test Conditions
Turn-on Time
VCC = 150V IC = 8A
IB1 = 1.6A
BUX48A
Storage Time
VCC = 150V IC = 8A
IB1 = -IB2 = 1.6A
BUX48A
Fall Time
VCC = 150V IC = 8A
IB1 = -IB2 = 1.6A
BUX48A
Unit
µs
Inductive Switching Times
Parameter
Storage Time
Fall Time
Test Conditions
Symbol
Minimum
Typical
VCC = 300V IC = 8A
BUX48A
LB = 3µH
VBE = -5V IB1 = 1.6A
same conditions at TC = 125°C
ts
-
3
VCC = 300V IC = 8A
BUX48A
LB = 3µH
VBE = -5V IB1 = 1.6A
same conditions at TC = 125°C
tf
Maximum
Unit
5
µs
-
0.13
0.4
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1165900
TO-3 Mechanical Data
Dimensions
Minimum
Maximum
A
11.00 (0.433)
13.10 (0.516)
B
0.97 (0.038)
1.15 (0.045)
C
1.50 (0.59)
1.65 (0.065)
D
8.32 (0.327)
8.92 (0.351)
E
19.00 (0.748)
20.00 (0.787)
G
10.70 (0.421)
11.10 (0.437)
N
16.50 (0.649)
17.20 (0.677)
P
25.00 (0.984)
26.00 (1.023)
R
4.00 (0.157)
4.09 (0.161)
U
38.50 (1.515)
39.30 (1.547)
V
30.00 (1.187)
30.30 (1.193)
Dimensions : Inches (Millimetres)
Part Number Table
Description
Part Number
Transistor, NPN, TO-3
BUX48A
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