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Background Statement for SEMI Draft Document 5596
New Standard: GUIDE TO ASSESS AND MINIMIZE
ELECTROMAGNETIC INTERFERENCE (EMI) IN A SEMICONDUCTOR
MANUFACTURING ENVIRONMENT
Notice: This background statement is not part of the balloted item. It is provided solely to assist the recipient in
reaching an informed decision based on the rationale of the activity that preceded the creation of this Document.
Notice: Recipients of this Document are invited to submit, with their comments, notification of any relevant
patented technology or copyrighted items of which they are aware and to provide supporting documentation. In this
context, “patented technology” is defined as technology for which a patent has issued or has been applied for. In the
latter case, only publicly available information on the contents of the patent application is to be provided.
Background:
Release of the latest revision of SEMI E33 provides guidance for electromagnetic compliance for semiconductor
manufacturing equipment, but it leaves a gap for managing the semiconductor electromagnetic environment in the
fabrication facilities (fabs) where electromagnetic compliance of the equipment is only one component. The fab
facility environment with other components (e.g., power and ground wiring, equipment collocations) influences the
electromagnetic environment, and as such, affects yield, quality, and equipment uptime. Some aspects, such as an
EMI Audit, are already a part of SEMI E33.
Please note that some of the new proposed definitions for some terms in common with SEMI E33 are different.
However, the term for electromagnetic interference (EMI) in this Document has an alternate meaning than the term
in SEMI E33 so that definition is not planned to be harmonized with SEMI E33. Once these other improved
definitions are approved in this new Guide, the task force intends to consider harmonizing those definitions with
SEMI E33.
The beneficiaries of the new Guide Document will be semiconductor fabrication facilities and similar manufacturing
plants for other related technologies (e.g., PV, FPD, MEMS). This new Document will provide guidance on
assessment, establishment, and maintenance of a manageable electromagnetic environment in a production
environment.
The ballot results will be reviewed and adjudicated at the meetings indicated in the table below. Check
www.semi.org/standards under Calendar of Events for the latest update.
Review and Adjudication Information
Group:
Date:
Time & Timezone:
Location:
City, State/Country:
Leader(s)/Authors:
Standards Staff:
Task Force Review
EMC Task Force
April 4, 2017
5:00 PM-7:00 PM PDT
SEMI HQ
Milpitas, CA/USA
Vladimir Kraz (BestESD Technical
Services)
Inna Skvortsova ([email protected])
408-943-6996
Committee Adjudication
Metrics NA TC Chapter
April 5, 2017
2:00 PM-5:00 PM PDT
SEMI HQ
Milpitas, CA/USA
David Bouldin (Fab Consulting)
Mark Frankfurth (Cymer)
Vladimir Kraz (BestESD)
Inna Skvortsova ([email protected])
408-943-6996
Semiconductor Equipment and Materials International
673 S. Milpitas Boulevard
Milpitas, CA 95035
Phone: 408.943.6900, Fax: 408.943.7943
DRAFT
SEMI Draft Document 5596
New Standard: GUIDE TO ASSESS AND MINIMIZE
ELECTROMAGNETIC INTERFERENCE (EMI) IN A SEMICONDUCTOR
MANUFACTURING ENVIRONMENT
Purpose
The purpose of this Guide is to provide guidance for the assessment and minimization of electromagnetic
interference (EMI) in a semiconductor manufacturing environment to improve yield, equipment availability, and test
time and measurement results.
Scope
This Guide applies to equipment and facilities constructed for the purpose of manufacturing semiconductor
devices (i.e., a semiconductor manufacturing environment), including all communications and control systems,
processing equipment, metrology equipment, inspection equipment, automation equipment, and informationtechnology equipment. Some terms are specialized to a semiconductor manufacturing environment.
The primary focus of this Guide is on a semiconductor manufacturing environment, but this Guide may also be
applied to the facilities and equipment used for manufacturing other related products (e.g., photovoltaics (PVs), (flat
panel displays [FPDs], disk drives, microelectromechanical systems [MEMS]).
NOTICE: SEMI Standards and Safety Guidelines do not purport to address all safety issues associated with their use.
It is the responsibility of the users of the documents to establish appropriate safety and health practices, and determine
the applicability of regulatory or other limitations prior to use.
NOTE 1: Under certain conditions, EMI can impact equipment safety.
Limitations
This Guide does not apply to EMI caused by electrostatic discharges (ESDs) from process-specific charging that
may occur to semiconductors in process under manufacture. Refer to SEMI E78 and SEMI 129 for more information.
Referenced Standards and Documents
SEMI Standards and Safety Guidelines
SEMI E33 — Guide for Semiconductor Manufacturing Equipment Electromagnetic Compatibility (EMC)
SEMI E78 — Guide to Assess and Control Electrostatic Discharge (ESD) and Electrostatic Attraction (ESA) for
Equipment
SEMI E129 — Guide to Assess and Control Electrostatic Charge in a Semiconductor Manufacturing Facility
European Commission (EC) Directives1
Directive 2014/30/EU — Directive 2014/30/EU of the European Parliament and of the Council on the Approximation
of the Laws of the Member States Relating to Electromagnetic Compatibility and Repealing Directive 2004/108/EC
Association Connecting Electronics Industries (IPC)2
IPC-A-610 — Acceptability of Electronic Devices
Other Documents
ITRS 2013 — International Technology Roadmap for Semiconductors – ITRS3
1
European Commission, Rue de la Loi 200/Wetstraat 200, B-1049 Bruxelles/Brussels, Belgium; Telephone: 32.2.299.30.85, Fax: 32.2.296.17.49,
http://www.europa.eu.int.
2
Association Connecting Electronics Industries (IPC), 3000 Lakeside Drive, 105 N, Bannockburn, IL 60015, USA, Telephone: + 1 847-6157100, Fax: + 1 847-615-7105, http://www.ipc.org.
3
International SEMATECH, ITRS Department, 2706 Montopolis Drive, Austin, TX 78741, USA. http://www.itrs2.net.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
Page 1
Doc. 5596  SEMI
LETTER BALLOT
Document Number: 5596
Date: 5/6/2017
Semiconductor Equipment and Materials International
673 S. Milpitas Boulevard
Milpitas, CA 95035
Phone: 408.943.6900, Fax: 408.943.7943
DRAFT
Document Number: 5596
Date: 5/6/2017
LETTER BALLOT
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.
Terminology
Abbreviations and Acronyms
AC — alternating current
CEN — European Committee for Standardization
CFL — compact fluorescent lamp
CFR — Code of Federal Regulations
DC — direct current
EC — European Commission
ELF — extremely low frequency
EMC — electromagnetic compatibility
EMF — electromagnetic field
EMI — electromagnetic interference
ESD — electrostatic discharge
FCC — Federal Communications Commission
FFT — fast Fourier transform
FPD — flat panel display
IC — integrated circuit
IEC — International Electrotechnical Commission
IEEE — Institute of Electrical and Electronics Engineers
IPC — Association Connecting Electronics Industries
ITRS — International Technology Roadmap for Semiconductors
MEMS — microelectromechanical systems
OEM — original equipment manufacturer
PLC — power line communication
RF — radio frequency
RFID — radio frequency identification
RMS — root mean square
SEM — scanning electron microscope
SMPS — switched-mode power supply
UPS — uninterruptable power supply
VFD — variable frequency drive
VLF — very low frequency
Definitions
conducted emission — undesirable high-frequency signals present on wires, cables, and metal parts of
equipment.
electrical overstress (EOS) — exposure of device or circuit to excessive electrical signals not caused by
electrostatic charge.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
Page 2
Doc. 5596  SEMI
Semiconductor Equipment and Materials International
673 S. Milpitas Boulevard
Milpitas, CA 95035
Phone: 408.943.6900, Fax: 408.943.7943
DRAFT
electromagnetic compatibility (EMC) — the ability of electronic and communication equipment to be able to
operate satisfactorily in the presence of electromagnetic interference (EMI) and not be a source of EMI to nearby
equipment.
electromagnetic interference (EMI) — any electrical signal in the nonionizing (suboptical) portion of the
electromagnetic spectrum with the potential to cause an undesired response in electronic equipment.
electrostatic discharge (ESD) — the rapid spontaneous transfer of electrostatic charge induced by a high
electrostatic field. [SEMI E78]
ELF-sensitive equipment — any equipment, such as a scanning electron microscope (SEM), with performance
that is adversely affected by extremely low frequency (ELF) electromagnetic fields (EMFs). [SEMI E33]
EMI Audit — an internal or external verification of some or all of the provisions related to electromagnetic
interference (EMI) compliance with internal or external EMI limits.
EMI Survey — a process of mapping out levels and other relevant properties of electromagnetic emission.
EMI event — an occurrence of electromagnetic interference (EMI) that may also include electromagnetic
emission from electrostatic discharge (ESD) events. [SEMI E33]
EMI-sensitive equipment — any equipment with performance that is adversely affected by electromagnetic
interference (EMI) present in the semiconductor manufacturing environment. [SEMI E33]
enclosure — the physical boundary of the equipment through which electromagnetic fields (EMFs) may
radiate or impinge.
ESD event — an occurrence of electrostatic discharge (ESD) that can cause an electromagnetic emission.
[SEMI E33]
extremely low frequency (ELF) — the spectrum range less than 3 kHz. [SEMI E33]
extremely low frequency (ELF) electromagnetic field (EMF) — an electromagnetic field (EMF) generated by
extremely low frequency (ELF) current flow (most commonly at 60 Hz in the U.S., parts of Japan, and Taiwan and at
50 Hz in most of Asia and in Europe) within equipment and facilities. [SEMI E33]
port — a particular interface (e.g., ground port) of the specified equipment with the external electromagnetic
environment.
power line communication (PLC) — a communication technology that enables sending data over power cables.
radiated emission — undesirable high-frequency electromagnetic field (EMF) emanating from equipment.
supplier — provider of equipment and related services to the user (e.g., unit manufacturer). Also called
equipment vendor or original equipment manufacturer (OEM). [SEMI E10]
user — party that acquires equipment for the purpose of using it to manufacture semiconductors. See also the
definition for supplier. [SEMI S2]
very low frequency (VLF) — the spectrum range from 3kHz and 30 kHz. [SEMI E33]
Symbols
cm — centimeter
dBµV — decibel-microvolt
ft — foot
GHz — gigahertz
GS — gigasamples
Hz — hertz
kHz — kilohertz
m — meter
µm — micrometer or micron
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
Page 3
Doc. 5596  SEMI
LETTER BALLOT
Document Number: 5596
Date: 5/6/2017
Semiconductor Equipment and Materials International
673 S. Milpitas Boulevard
Milpitas, CA 95035
Phone: 408.943.6900, Fax: 408.943.7943
DRAFT
MS — megasamples
nm — nanometer
Ω — ohm
s — second
V — volt
Basics of Electromagnetic Interference (EMI) in a Semiconductor Manufacturing Environment
Any electrical or electronic equipment in the normal course of its operation generates electromagnetic fields
(EMFs), or radiated emissions, and undesired signal artifacts, or conducted emissions, on cables, wires, and its metal
parts. Intentional emission sources (e.g., wireless networks, mobile phones, radio frequency [RF] generators, RF
identification [RFID] readers) generate EMFs that inject undesirable signals in cables, wires, and equipment circuits.
Power line communication (PLC) causes high-frequency signals to be present on power lines. Under certain
circumstances these signals can adversely affect at least one or all of the following:
Normal operation of equipment,
Test time and measurement results,
Electronic communication (wired and/or wireless), and
Damage to sensitive devices.
In many cases the magnitude of electrical noise (i.e., undesired electrical signals) is not the only influencing factor.
Various properties of electrical noise may have a different effect. Sometimes a relatively weak interference with the
properties within the equipment vulnerability range can cause more problems than a much stronger signal with
different properties. Among such properties are (in no particular order of significance):
Frequency, or pulse repetition rate, of the signal if it is periodic;
Spectrum of the signal if it is comprised of multiple frequencies;
Peak amplitude values, both maximum and minimum values;
Pulse width in case of a pulsed signal;
Pulse rise and fall times;
Modulation properties of the signal; and
Ringing (i.e., oscillation) of the signal.
Radiated and Conducted Emission
Radiated emission is an undesirable high-frequency EMF radiated by voltages and currents present on cables,
wires, and metal structures. An EMF has at least one component in the near field—electric or magnetic field—and
both in the far field. For a discussion on near and far fields, see SEMI E33 Related Information 2. Notably, any radiated
emission creates its complementary conducted emission since any electric or magnetic field causes voltage or current
in affected conductors.
Conducted emission is electrical signals in cables, wires, and metal structures. Notably, conducted emission
creates its complementary radiated emission since any voltage or current causes an electric or magnetic field
accordingly.
Propagation of Electrical Noise
Radiated Emission
EMFs propagate through the air. The field strength is reduced with the distance. Metal surfaces of equipment
may attenuate the field, but they also can reflect the field providing unexpected resonant peaks. Propagation of electric
and magnetic fields differs in the near field. For a discussion on near and far fields, see SEMI E33 Related Information
2.
Due to rapid attenuation of radiated emission with distance, the only relevant impact this emission can cause is
within a short distance from its origin. The exception is emission at particular frequencies, intentional or accidental,
that interferes with wireless communication, which has great sensitivity to such signals.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
Page 4
Doc. 5596  SEMI
LETTER BALLOT
Document Number: 5596
Date: 5/6/2017
Semiconductor Equipment and Materials International
673 S. Milpitas Boulevard
Milpitas, CA 95035
Phone: 408.943.6900, Fax: 408.943.7943
DRAFT
The radiated electric field from voltage sources greatly depends on the properties of the radiating antenna,
specifically the antenna factor (i.e., efficiency of antenna vs. frequency) and antenna gain (i.e., directional properties
of antenna). Since the majority of radiated EMI is unintentional (except interference from intentional transmitters,
such as wireless networks, etc.), antennae are also unintentional by definition and therefore can have peaks of
efficiency at random frequencies that would either match the spectrum of the originating electrical signal or not. In
general, the shorter the antenna, the higher in frequency is its efficiency peak. As a result, a complex electrical signal
comprised of a broad spectrum may cause radiated emission of any notice only at certain frequencies, not in the entire
spectrum of the originating signal.
Conducted Emission
Electrical noise, in the form of voltages and currents on wires and cables (largely on power lines and ground),
conducts emission much farther with less attenuation than radiated emission since their energy is not being spread in
a wide angle as in the case of radiated emission.
Power and ground wires are the most common conduit of conducted emission in the facility since they connect
the entire facility together. Since power lines and ground connect all of the equipment in a semiconductor
manufacturing environment, electrical noise originated in one location is capable of propagating to many equipment.
Particular properties of long wires (e.g., distributed inductance and capacitance, associated resonance
frequencies) may substantially alter the waveform of the original signal.
While the originating signal may have a broad spectrum due to sharp rise and fall times of transient pulses,
the signal after even a short run of wires loses a significant portion of its high-frequency content. Most of the EMI
signals of any significance on power lines and ground are confined within 1 to 2 MHz
Self-resonances in power lines and ground often created ringing (i.e., oscillations) on these resonant
frequencies in response to sharp transients; this ringing having nothing to do with the originating signal spectrum. The
typical signature of such ‘phantom’ signals is diminishing ringing artifacts.
Inside the equipment, conducted emission propagates via many paths; including direct current (DC) supply lines,
equipment's metal frame, and communication cables. Since the conduits are significantly shorter than long alternating
current (AC) and ground wires in the facility, conducted emission has a broader spectrum that extends into several
MHz
Effects of EMI on Equipment, Semiconductor Devices, and Communication
Effects of EMI on Equipment
Electrical noise generated by equipment adversely affects equipment, processes, and semiconductor devices in
several ways:
Interference with control signals where EMI-induced signals can be interpreted by equipment as legitimate
signals causing equipment malfunction and/or lockup,
Interference with signals from sensors causing false readings and resulting undesirable process variances, and
Power line transients, which also fall under the category of EMI due to their timing and spectral characteristics,
can generate strong unwanted signals in control circuits and power lines (DC or AC) of equipment causing various
types of malfunction or even damage.
Effect of EMI on Semiconductor Devices
Weak EMI signals normally do not cause device damage. Typical radiated signals in semiconductor
manufacturing equipment are not found to be a cause of device damage largely due to their low energy. Conducted
emission, however, typically carries significant energy and may be capable of causing electrical overstress (EOS) that
may damage sensitive devices. Industry documents (i.e., IPC-A-610 and the International Technology Roadmap for
Semiconductors [ITRS]) indicate that undesirable voltages as low as 0.3 V can cause direct damage to sensitive
devices.
Direct Damage — Excessive voltage applied between any pins or terminals of the device or circuit causes
physical damage to the structure of the device, including but not limited to silicon, bonding wires, or other parts.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
Page 5
Doc. 5596  SEMI
LETTER BALLOT
Document Number: 5596
Date: 5/6/2017
Semiconductor Equipment and Materials International
673 S. Milpitas Boulevard
Milpitas, CA 95035
Phone: 408.943.6900, Fax: 408.943.7943
DRAFT
Damage via Latch-Up — Excessive signals applied to input or output pins or terminals of the device or circuit
that exceed supply rails (either positive or negative) may put the device into latch-up mode causing overheating and
resulting permanent thermal damage.
Interference with Wired or Wireless Communication
Today's facilities are interconnected via wired and/or wireless communication networks. Any interference with
this communication causes downtime at best and an alteration in process resulting in defective batches of product at
worst. Both radiated and conducted emission can cause interference with communications.
Radiated emission can cause spectrum collisions interfering directly with wireless communication protocols.
Radiated EMI by the nature of antenna factors is more efficient at higher frequencies where wireless communication
takes place.
Conducted emission can interfere directly with power line communication (PLC) as well as cause unwanted
signals in any circuit causing communication difficulties.
Sources of EMI in a Semiconductor Manufacturing Environment
Overview — Any equipment that has electrical and/or electronic content generates electrical noise and can become
a source of EMI in a semiconductor manufacturing environment, whether this noise is internal to the equipment or
propagates outside of the equipment as either radiated or conducted emission.
Internal Equipment Electrical Noise Sources (in No Particular Order of Severity)
Servomotor and Variable Frequency Drive (VFD) — These types of motors operate on pulsed voltage with
very short rise and fall times (often in a range of nanoseconds). This results in sharp voltage spikes with the repetition
rate of the drive signal (typically between 6 and 20 kHz) propagating throughout the equipment and specifically to
ground causing unwanted ground voltages and currents. This creates substantial high-frequency voltage differentials
between different grounded points, often in a range of several volts, which goes unnoticed using conventional
standardized methods, such as ESD grounding and safety checks.
Switched-Mode Power Supply (SMPS) — Improperly designed SMPSs, especially with a too small core of
transformers for the rated current and/or with insufficient filtering, generate transient signals on power lines (DC and
AC), ground, and subsequently on signal lines, with a repetition rate of typically 40 to 200 kHz, often with additional
spikes with the repetition rate at the frequency of AC mains or double of that (i.e., 50/60 or 100/120 Hz).
Uninterruptable Power Supply (UPS) — This type of power supply is, in effect, an SMPS with a backup battery.
When regular power is available, they typically cause no EMI issues; however when power disappears or becomes of
undesirable quality (i.e., when the UPS is actually needed), it generates significant transient signals on power lines
synchronized with the frequency of the mains. In addition, switchover transients can be substantially strong.
Dimmers and Thyristor-Based Temperature Control — These controls produce transient signals on power lines
with the repetition frequency of that of the mains or double of that (i.e., 50/60 or 100/120 Hz).
Light Emitting Diode (LED) and Compact Fluorescent Lamp (CFL) Lighting — Such lighting can create strong
conducted emission due to nonlinear current consumption of LEDs and CFLs. The resulting transients on power lines
are synchronized with the frequency of mains.
Commutation of an Electrical Load — Turning on and off any electrical load, including relays, solenoids,
heaters, lights, etc., as well as commutation of end switches, causes rapid changes in current consumption that, in turn,
causes voltage transients.
External Electrical Noise — This electrical noise comes into equipment via the AC line and ground and as
radiated emission.
Transients on AC Line — These transients can reach over 1 kV and are not uncommon in a semiconductor
manufacturing environment with high-powered equipment. While regular surge protectors limit these transients to
~440 V (in 250 V AC circuits), the remaining 440 V spikes, as well as smaller spikes under the suppression limit, can
be just as harmful both for equipment and as EMI.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
Page 6
Doc. 5596  SEMI
LETTER BALLOT
Document Number: 5596
Date: 5/6/2017
Semiconductor Equipment and Materials International
673 S. Milpitas Boulevard
Milpitas, CA 95035
Phone: 408.943.6900, Fax: 408.943.7943
DRAFT
High-Energy Equipment — This type of equipment (e.g., plasma etchers, ion implanters, RF generators) injects
strong signals into power lines and ground as well as produces strong radiated emission.
Wireless Communication — Wireless communication in manufacturing is by its nature an intentional radiation
source. Emission from wireless networks, mobile phones, and other wireless communication protocols found in a
semiconductor manufacturing environment generates voltages and currents in any metal object, including electronic
circuits and wires as well as cables connected to them. Improperly positioned antennae can induce voltages and
currents in the circuits strong enough to interfere.
Types of Electromagnetic Emission in a Semiconductor Manufacturing Environment
Continuous — This signal is largely sinusoidal (often with strong harmonics) and periodic with a well-defined
frequency or repetition rate. Such signals are often amplitude-modulated with modulation mostly correlated with
power line frequency. A combination of different continuous signals is often present.
Transient — This signal is nonsinusoidal with a short duration. Transient signals may last anywhere from
nanoseconds to several milliseconds. They can be occasional nonperiodic signals or periodic.
Occasional transient signals are caused mostly by commutation of an electrical load in equipment or other
commutation, such as operation of limit switches.
Transient periodic signals are one of most common signals in a semiconductor manufacturing environment.
The repetition rate falls largely in three different ranges: power line frequency (i.e., 50/60 Hz or 100/120 Hz);
servomotors and VFDs (typically between 6 and 20 kHz), and SMPSs (typically between 40 and 200 kHz).
Measurements
Overview
Proper measurements of electromagnetic emission, radiated or conducted, are essential for assessing the level
of electromagnetic emission in the semiconductor manufacturing environment, EMI troubleshooting, selecting the
most optimal mitigation method, and for verification of effectiveness of applied mitigation.
Measurements of electromagnetic emission should be relevant to the impact of such emission on the
semiconductor manufacturing environment, processes, and products. Measurement methodology specified in EMC
standards and regulations does not always reflect the needs or the environment in a semiconductor manufacturing
environment (see § 14). SEMI E33 Related Information 1 provides an overview of continuous and transient emission
and their effects on equipment. There are other substantial differences between EMC measurement methodology and
the electromagnetic environment in a semiconductor manufacturing environment. This section provides
recommendations on EMI measurements in a semiconductor manufacturing environment.
Time- and Frequency-Domain Measurements
Frequency-domain measurements are done using a spectrum analyzer or fast Fourier transform (FFT) function
on digital storage oscilloscopes. These measurements provide frequency content information of continuous signals,
but do not provide adequate information of transient signals, which are more common in a semiconductor
manufacturing environment. Frequency-domain measurements are helpful for analysis of wireless communication and
emission from certain sources of continuous signals such as RF generators, RFID, etc.
Time-domain measurements are made with oscilloscopes, preferably high-speed digital storage oscilloscopes
that are common today. Time-domain measurements allow for capturing the waveform of the signal, for understanding
of such parameters as rise and fall times, pulse width, signal envelopes, signal ringing, and modulation as well as to
explore signal behavior under different conditions (e.g., at different time bases). Time-domain measurements by
themselves may provide frequency information in a limited way, however the FFT option available for many
oscilloscopes allows for the basic understanding of frequency information. The minimum recommendations for timedomain measurements in a semiconductor manufacturing environment are:
Radiated emission: 3 GHz bandwidth; 5 GS/s sampling rate
Conducted emission: 200 MHz bandwidth; 500 MS/s sampling rate
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
Page 7
Doc. 5596  SEMI
LETTER BALLOT
Document Number: 5596
Date: 5/6/2017
Semiconductor Equipment and Materials International
673 S. Milpitas Boulevard
Milpitas, CA 95035
Phone: 408.943.6900, Fax: 408.943.7943
DRAFT
Broadband Measurements
Taking broadband measurements is not unlike measuring a signal with a multimeter. The only parameters
measured are amplitude-based and, in some specific circumstances, the dominate frequency, if present. Such
measurements are helpful for quick and inexpensive assessment of signal levels, but without any detailed information
on the signal's properties.
Radiated and Conducted Emission Measurements
Radiated measurements are measurements of EMFs. They require an appropriate antenna to convert the field
into an electrical signal. An EMF has two components—electric and magnetic. In some cases these fields need to be
measured separately, but in other cases measurement of just one field component is sufficient. SEMI E33 Related
Information 2 describes near- and far-field measurements. While for typical EMC testing a receiving antenna has to
be positioned at a certain far-field distance from the source (i.e., 3 m or 10 m), in a semiconductor manufacturing
environment there are many sources of emission and the measurements should be made not just at the source of the
emission but rather closer to the equipment that is or may be affected by EMI. The specific locations of measurements
should be determined based on the specifics of the equipment. SEMI E33 Appendix 2 provides general
recommendations for performing an EMI Audit, but the user is encouraged to examine each equipment and set
measurement points as appropriate.
Conducted Measurements
Conducted measurements are essentially measurements of signals on wires and cables. User should exercise
caution when measuring electrical noise on conductors carrying high voltage, such as mains, servomotor drive lines,
etc.
High-frequency contact measurements on power lines, ground and other circuits in an actual semiconductor
manufacturing environment add inherent uncertainty due to the mismatch of impedances. Typical high-frequency
measurements are done in a 50 Ω environment. While instrumentation can provide a 50 Ω termination, the sources
(i.e. power line, ground) cannot. Test leads of instrumentation may add artifacts as well. The resulting errors may
include ringing, resonances, uneven frequency response, etc. It is physically impossible to establish a matched
impedance environment in an actual semiconductor manufacturing environment, therefore a user needs to take into
account possible artifacts of the measurements.
Conducted emission is measured as voltage between two points (e.g., power-power, power-ground, groundground) or as current (i.e., current in ground wire, current between two different grounded points).
EMI Survey/Audit
Overview — An EMI Survey is a process of mapping out levels and other relevant properties of electromagnetic
emission. An EMI Audit (described in part in SEMI E33 Appendix 2) is an internal or external verification of some
or all of the provisions related to electromagnetic interference (EMI) compliance with internal or external EMI limits.
This section outlines the basics of these processes for selected types of an EMI Survey and EMI Audit.
Purpose — One or more of the following:
To map levels and/or other properties of electromagnetic emission in the facility, a specific area, on a specific
power or ground line, or inside the equipment;
To verify some or all of the provisions related to electromagnetic interference (EMI) compliance with internal
or external EMI limits;
To identify the highest probable source(s) of emission;
To identify the locations with the highest levels of emission;
To collect information for mitigation of emission; and/or
To verify improvements once mitigation has been performed.
Recommendations
An EMI Survey performed prior to installing semiconductor manufacturing equipment may serve as a very
useful tool to determine if the areas are compatible with the semiconductor manufacturing equipment EMI immunity
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
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DRAFT
limits to prevent having to relocate semiconductor manufacturing equipment due to EMI generated by the facility
infrastructure or other equipment.
EMI Surveys and Audits should be performed by a knowledgeable engineer or technician.
EMI Surveys and Audits should be performed:
before installation of semiconductor manufacturing equipment,
12.3.3.1.1 It is recommended that the supplier or the equipment user conduct the EMI power and ground audit portion
of an EMI Audit (see SEMI E33 Appendix 2) on the semiconductor manufacturing equipment ground (i.e., ground
port) prior to installation of EMI-sensitive semiconductor manufacturing equipment and after installation of all
equipment. See Figure 1.
before and after maintenance of semiconductor manufacturing equipment, and
at least once per year (i.e., repeated annually).
Ground port
AC power port
Enclosure
Signal port
DC power port
Process
measurement port
Equipment Ports
An EMI Survey or Audit of the facility is a responsibility of the equipment user, although the equipment
supplier can conduct its own EMI Survey or Audit to determine the electromagnetic environment at or near its
equipment.
Parameters Measured During an EMI Survey and Audit — Depending on a particular need, an EMI Survey or
Audit may include, but not be limited to, one or more of the following measurements:
Radiated emission;
Electric field near gaps in equipment covers and near openings and
Electric field near wires and cables exiting equipment
Conducted emission;
High frequency voltages and/or currents on cables, wires, and metal structures;
Emission spectrum: broadband or within the band of specific interest;
Emission amplitude characteristics: one or more of
peak,
12.4.5.1.1 root mean square (RMS),
12.4.5.1.2 average, and
12.4.5.1.3 quasipeak;
Amplitude modulation;
Time/envelope characteristics; and/or
Correlation between certain steps during operation of equipment and occurrences of emission
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
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DRAFT
Mitigation of Undesirable Electromagnetic Emission
Overview — This section provides recommendations on the basics of mitigation of emission. This section
includes both maintenance items and additional measures not accounted for in semiconductor manufacturing
equipment design for the reasons described further in § 13.2.1. Below are general recommendations on reduction of
EMI, however specific measures may depend on a particular problem.
Undesirable Emission and EMC Compliance
In theory, all equipment installed in the facility should be compliant with SEMI E33, or, at least with other
relevant EMC standards and regulations. This compliance by itself does not guarantee that the compliant equipment
has emission levels satisfactory to a particular semiconductor manufacturing environment. There are several
fundamental discrepancies between regulatory requirements and tests and a semiconductor manufacturing
environment as follows:
Cables — During an EMC test, the cabling (power and data) are quite short; however in actual installation,
equipment becomes a part of a very complex power and ground network where the length of all cables is dictated by
convenience on the production floor rather than the equipment supplier's recommendation, if any. This additional
cabling length introduces parasitic capacitance, inductance, and resistance, which in combination reshapes the
emission signal's waveform and, specifically for conducted emission, often shifts the spectrum of emission towards
the lower frequencies (see § 7). Counter-emission measures, such as filters, are selected to provide the best attenuation
at the originating higher frequencies while the actual frequencies that are present on power lines and ground are in the
lower end of the spectrum, making these filters ineffective in actual installations based on published data 4.
Matching Impedance — All EMC conducted emission tests are done using a 50 Ω termination. This is done
to minimize reflections and to provide test repeatability. No actual power line has a 50 Ω impedance. The absolute
majority of EMC power line filters are optimized for a 50 Ω termination to be most effective during EMC compliance
testing. Some reputable filter manufacturers provide filter attenuation data in the more realistic 0.1 to 100 Ω
termination range where it clearly shows that at the lower end of the spectrum where emissions are stronger (see ¶
13.2.1.1), the filters may actually provide an amplification of the signal rather than its reduction.
Measurement Limitations — Most EMC regulations specify measurements of emission with a special
quasipeak detector, which is very slow. This detector effectively suppresses short transient signals making them appear
of very low amplitude or be completely ignored. Most of the emission emanating in and from the equipment is transient,
generated by power commutation, operation of servomotors and VFDs, relays and limit switches, LED and CFL
lighting, thyristors, as well as SMPSs (which produce periodic short transients), and many other sources. These signals
are essentially ignored during the EMC test while being the most dominant type of emission in a semiconductor
manufacturing environment. It is not uncommon to have transient signals on power lines in excess of 10 V peak and
10 V/m radiated transients.
External vs. Internal Emission — All EMC emission regulations deal with emission emanated from the
equipment to the ‘outside’ while there are no regulations on emission inside the equipment. The majority of today's
semiconductor manufacturing equipment is a composite (i.e., consisting of more than one functional block or works
closely in conjunction with another equipment). High levels of emission from one such functional block may not be
individually tested and the close proximity (i.e., physical and electrical) to other equipment can make the possibility
of interference high. In addition, high levels of emission, specifically conducted emission, may inflict EOS to the
devices during production.
Radiated Emission — Radiated emission compliance testing is conducted in a far field, typically at 10 m or
at 3 m away from the source. In a typical semiconductor manufacturing environment, equipment is collocated at much
shorter distances, especially equipment that works in conjunction with other equipment. This shorter distance changes
the nature of the field from far field to near field (see SEMI E33 Related Information 2). More specifically, the
emission may need to be measured both for electric and magnetic fields, and instead of measuring emission at just one
spot 10 m away, multiple measurements may need to be performed in several spots around the equipment at the
Wallash, Al, and Kraz, Vladimir; “Measurement, Simulation and Reduction of EOS Damage by Electrical Fast Transients on AC Power”; 2010
EOS/ESD Symposia Proceedings; EOS/ESD Association, Inc.; 7900 Turin Road, Building 3, Rome New York 13440-2069, USA; Phone: +1 315339-6937; Fax: +1 315-339-6793; http:// www.esda.org
4
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
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DRAFT
distance where it may affect other equipment. Mitigation of this radiated emission may be different from
accomplishing acceptable emission levels in a far field at 10 m away.
Mitigation of Source vs. Mitigation of Target
Any reduction of generated emission within the equipment needs to be done either by the equipment supplier
or by its agent, or by a responsible party knowledgeable about the equipment with the understanding that this may
lead to loss of warranty and that possible malfunction or loss of performance of the equipment caused by a third-party
modification may become that party's responsibility. This is not to say that straight-forward equipment modification,
such as installation or modification of shielding for radiated emission or filters for conducted emission, or rerouting
of internal cables and wires cannot be made reasonably easy and without ill effect by a qualified engineer or a
technician of the user.
If the equipment user decides against modification of equipment and/or equipment supplier is unwilling or
unable to reduce the emission generated by the equipment, the only practical venue available to the equipment user is
to limit propagation of the emission, radiated or conducted, from that equipment to other equipment. The following
subsections provide basic guidance on the process and the methodology.
Mitigation at the Source Equipment vs. at the Target Equipment
In theory, the best way to reduce electromagnetic emission is at its source. While in many cases this approach
can be very effective, in the complex environment of a semiconductor manufacturing environment there may be
complications. First, there are potentially as many sources of emission as there are equipment, each of them, in turn,
having more than one emission source, each with different properties. The propagation path for different types of
emission and its length vary, meaning that the reduction of electrical noise in one particular ‘source’ equipment may
not satisfactory affect the emission level at the ‘target’ equipment. Identifying a particular source of the emission by
its unique signature (i.e., spectrum and/or time-domain) at the ‘target’ equipment is not only challenging in the
presence of multiple other emission signatures, but also is highly inaccurate because emission properties may vary
with the distance, especially for conducted emission. This difficulty does not diminish the importance of reducing any
excessive emission at its source, it simply means that reduction of emission at the ‘source’ equipment may be
extremely difficult and, in the end, not very effective in the reduction of emission at the particular ‘target’ equipment.
Reduction of emission at the ‘target’ equipment is more focused and well-defined. The most comprehensive approach
includes both managing emission at the strongest sources and blocking the propagation of the emission.
Mitigation of Radiated Emission Recommendations
Properly close and fasten all metal covers on the equipment.
Verify there are low-impedance electrical connections between the covers and the equipment.
If problematic, correct by implementing an assured ground connection (i.e., noncoiled short braided wire or
equivalent, metal contacts with sufficient pressure without anodization or paint).
Properly tighten all connectors and their screws, where present.
Use short power and ground cables with minimal required service loops.
While cables by themselves do not generate signals, they act as antennae, both transmitting and receiving
radiated emission.
Cover with shielding material, such as using copper foil in the gaps in metal covers and between metal covers
and metal frame.
Verify proper low-impedance grounding of all nonpowered metal covers and frames inside the equipment.
If problems are found, use braided cable.
Shorten unnecessarily long wires and cables inside the equipment.
Allow for the shortest possible service loops.
Avoid loops in wiring that may create inductive antenna.
Tighten all power wires going to a particular load into one bundle.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
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DRAFT
Use properly-selected ferrite clamps on AC and/or DC power lines, ground wires, and motor drives (e.g.,
servomotors, VFDs).
If possible, relocate equipment farther away from the location of a strong emission.
Mitigation of Conducted Emission Recommendations
Install AC filters on power lines and ground.
Install ground filters on facility ground wires if a separate ground scheme is employed.
Install AC filters on AC side of servomotors and VFDs.
Install proper filters on drive side of servomotors and VFDs.
Install ground filters in line with internal grounding of the equipment.
Install ground filters in line with grounding between interoperating equipment (e.g., exposure equipment/track
system, integrated circuit [IC] handler/IC tester).
Install DC filters at the output of SMPSs.
Install AC filters at the AC input of SMPSs.
Identify conductors with the highest levels of emission and physically separate them from other wires.
Route power line and ground wires at least 30 cm (~1 ft) away from other wires.
Route motor drive (e.g., servomotors, VFDs) wires at least 30 cm (~1 ft) away from other wires.
Identify inherently noisy equipment and have it powered from a different power circuit or power branch than
the other equipment.
Identify most EMI-susceptible equipment and have it powered from a different power circuit or power branch
than the other equipment.
Compliance to and Limitations of EMC-Related Standards and Regulations
Some equipment is compliant with standards and regulations governing EMC (e.g., SEMI E33, EC EMC
Directive), however many equipment are not. The mere fact of compliance with EMC standards and regulations is not
a guarantee that this equipment will not produce electrical noise in actual installations.
EMC standards and regulations address only limited types of signals; namely continuous emission in a certain
frequency range, in well-defined circuits with 50 Ω terminations, and with radiated emission measured in a far field
(typically either 3 m or 10 m away from the source equipment).
No other known active standard or industry-wide recommendations today offers guidance on emission control
inside the equipment where the wafers and devices are being handled and processed, and where sensors and sensitive
electronic equipment are operating.
EMI immunity standards and regulations (e.g., EC EMC Directive) suffer from similar limitations, making
equipment appear EMI-hardened during the test, but having vulnerabilities when exposed to the actual electromagnetic
environment in a semiconductor manufacturing environment.
Recommended EMI Levels
What EMI levels are suitable for a particular manufacturing process is always subject to debate due to the variety
of equipment, its EMI protection, and the kind of a device in the process. It is not uncommon that a particular process
may require lower EMI levels when processing certain types of devices or using different types of equipment to
perform an essentially identical function on identical devices that are susceptible to different levels of EMI.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
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Phone: 408.943.6900, Fax: 408.943.7943
DRAFT
In order to simplify setting requirements for EMI levels in the semiconductor manufacturing environment, Table
1 presents several categories of EMI levels in the semiconductor manufacturing environment along with recommended
device geometry ranges per recommendations of the ITRS and IPC-A-610.
Table 1 Recommended EMI Category Levels for Geometry Size Ranges by Emission Type
Category
Recommended
Device
Geometry Size
Range
Radiated Emission
Conducted Emission
Near Field
Ground
EMI
Curent
Far Field
Peak
Continuous
Peak
Continuous
Peak
Continuous
Peak
1
≥28.3 nm
2 V/m
1 V/m
1 V/m
0.3 V/m
0.3 V
90
dBµV
31.6
mV
50mA
2
14.2 – 28.3 nm
1.5 V/m
0.7 V/m
0.8 V/m
0.3 V/m
0.2 V
80
dBµV
10
mV
20mA
3
10 – 14.2 nm
1 V/m
0.5 V/m
0.7 V/m
0.2 V/m
0.1 V
70
dBµV
3.16
mV
10mA
4
7.7 - 10 nm
0.7 V/m
0.5 V/m
0.5 V/m
0.2 V/m
0.1 V
70
dBµV
3.16
mV
5mA
For recommended levels for overhead transports in ELF and VLF ranges, refer to SEMI E33 section A1-2.
As device geometry requirements and semiconductor manufacturing equipment sensitivity advance, more
categories may need to be added to Table 1.
Determining the proper category should be based on process requirements and specific equipment
requirements, not on the geometry alone.
Related Documents
SEMI Standards
SEMI F47 — Specification for Semiconductor Processing Equipment Voltage Sag Immunity
European Commission (EC) Regulations/Directives/Standards5
Directive 2014/30/EU — Directive 2014/30/EU on the Approximation of the Laws of the Member States Relating to
Electromagnetic Compatibility and Repealing Directive 2004/108/EC
European Committee for Standardization (CEN) Standards6
EN 619 — Continuous Handling Equipment and Systems – Safety and EMC Requirements for Equipment for
Mechanical Handling of Unit Loads
International Electrotechnical Commission (IEC) Standards7
EN 55011/CISPR 11 — Industrial, Scientific and Medical (ISM) Radio-Frequency Equipment – Electromagnetic
Disturbance Characteristics – Limits and Methods of Measurement
EN 55022/CISPR 22 — Information Technology Equipment – Radio Disturbance Characteristics – Limits and
Methods of Measurement
NOTE 2: The International Special Committee on Radio Interference (CISPR) is a part of the IEC.
5
European Commission, Rue de la Loi 200/Wetstraat 200, B-1049 Bruxelles/Brussels, Belgium; Telephone: 32.2.299.30.85; Fax: 32.2.296.17.49,
http://www.europa.eu.int
6
European Committee for Standardization, 36 Rue de Stassart, B-1050 Bruxelles/Brussels, Belgium; Telephone: 32.2.550.08.11; Fax:
32.2.550.08.19, http://www.cenorm.be
7
International Electrotechnical Commission, 3 Rue de Varembé, Case Postale 131, CH-1211 Geneva 20, Switzerland; Telephone:
41.22.919.02.11, Fax: 41.22.919.03.00, http://www.iec.ch
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
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DRAFT
EN 55024/CISPR 24 — Information Technology Equipment – Immunity Characteristics – Limits and Methods of
Measurement
EN 61000-3-2/IEC 61000-3-2 — Electromagnetic Compatibility (EMC) – Part 3-2: Limits – Limitation of Voltage
Changes, Voltage Fluctuations and Flicker in Public Low-Voltage Supply Systems, for Equipment with Rated Current
<= 16 A per Phase and not Subject to Conditional Connection
EN 61000-3-3/IEC 61000-3-3 — Electromagnetic Compatibility (EMC) – Part 3-3: Limits – Limitation of Voltage
Changes, Voltage Fluctuations and Flicker in Public Low-Voltage Supply Systems, for Equipment with Rated Current
>= 16 A per Phase and not Subject to Conditional Connection
EN 61000-4-2/IEC 61000-4-2 — Electromagnetic Compatibility (EMC) – Part 4-2: Testing and Measurement
Techniques – Electrostatic Discharge Immunity Test, Transient Immunity Standard
EN 61000-4-3/IEC 61000-4-3 — Electromagnetic Compatibility (EMC) – Part 4-3: Testing and Measurement
Techniques – Radiated Radio-Frequency, Electromagnetic Field Immunity Test
EN 61000-4-4/IEC 61000-4-4 — Electromagnetic Compatibility (EMC) – Part 4-4: Testing and Measurement
Techniques – Fast Transient/Burst Immunity Test
EN 61000-4-5/IEC 61000-4-5 — Electromagnetic Compatibility (EMC) – Part 4-5: Testing and Measurement
Techniques – Surge Immunity Test
EN 61000-4-6/IEC 61000-4-6 — Electromagnetic Compatibility (EMC) – Part 4-6: Testing and Measurement
Techniques – Immunity to Conducted Disturbances, Induced by Radio-Frequency Fields
EN 61000-4-8/IEC 61000-4-8 — Electromagnetic Compatibility (EMC) – Part 4-8: Testing and Measurement
Techniques – Power Frequency Magnetic Field Immunity Test
EN 61000-4-11/IEC 61000-4-11 — Electromagnetic Compatibility (EMC) – Part 4-11: Testing and Measurement
Techniques – Voltage Dips, Short Interruptions and Voltage Variations Immunity Tests <16A
EN 61000-4-34/IEC 61000-4-34 — Electromagnetic Compatibility (EMC) – Part 4-34: Testing and Measurement
Techniques – Voltage Dips, Short Interruptions and Voltage Variations Immunity Tests >16 A per Phase
EN 61000-6-1/IEC 61000-6-1 — Electromagnetic Compatibility (EMC) – Part 6-1: Immunity for Residential,
Commercial and Light-Industrial Environments
EN 61000-6-2/IEC 61000-6-2 — Electromagnetic Compatibility (EMC) – Part 6-2: Generic Standards – Immunity
for Industrial Environments
EN 61000-6-3/IEC 61000-6-3 — Electromagnetic Compatibility (EMC) – Part 6-3: Generic Standards – Emission
Standard for Residential, Commercial and Light-Industrial Environments
EN 61000-6-4/IEC 61000-6-4 — Electromagnetic Compatibility (EMC) – Part 6-4: Generic Standards – Emission
Standard for Industrial Environments
EN 61204-3/IEC 61204-3 — Low Voltage Power Supplies, DC Output – Part 3: Electromagnetic Compatibility
(EMC)
EN 50091-2 — Uninterruptible Power Systems (UPS) – Part 2: EMC Requirements
EN 61326/IEC 61326 — Electrical Equipment for Measurement, Control and Laboratory Use – EMC Requirements
IEC 62040-2 — Uninterruptible Power Systems (UPS) – Part 2: Electromagnetic Compatibility (EMC) Requirements
Institute of Electrical and Electronics Engineers (IEEE) Standards 8
IEEE 1100 — IEEE Recommended Practice for Powering and Grounding Electronic Equipment (IEEE Emerald Book)
United States Federal Communications Commission (FCC) Code of Federal Regulations (CFR)9
8
Institute of Electrical and Electronics Engineers, IEEE Operations Center, 445 Hoes Lane, P.O. Box 1331, Piscataway, New Jersey 08855-0331,
USA; Telephone: 732.981.0060, Fax: 732.562.6380, http://www.ieee.org
9
Federal Communications Commission, 445 12th St. S.W., Washington DC 20554, USA; Telephone: 888.225.5322, http://www.fcc.gov
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
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DRAFT
CFR FCC Title 47, Part 15, Subpart B — FCC Rules and Regulations — Part 15: Radio-Frequency – Unintentional
Radiators
CFR FCC Title 47, Part 15, Subpart C — FCC Rules and Regulations — Part 15: Radio-Frequency – Intentional
Radiators
CFR FCC Title 47, Part 18 — FCC Rules and Regulations — Part 18: Industrial, Scientific, and Medical Equipment
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.
NOTICE: Semiconductor Equipment and Materials International (SEMI) makes no warranties or representations as
to the suitability of the Standards and Safety Guidelines set forth herein for any particular application. The
determination of the suitability of the Standard or Safety Guideline is solely the responsibility of the user. Users are
cautioned to refer to manufacturer’s instructions, product labels, product data sheets, and other relevant literature,
respecting any materials or equipment mentioned herein. Standards and Safety Guidelines are subject to change
without notice.
By publication of this Standard or Safety Guideline, SEMI takes no position respecting the validity of any patent rights
or copyrights asserted in connection with any items mentioned in this Standard or Safety Guideline. Users of this
Standard or Safety Guideline are expressly advised that determination of any such patent rights or copyrights, and the
risk of infringement of such rights are entirely their own responsibility.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline.
Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development)
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