Download S-90P0112SMA - SII Semiconductor Corporation

Rev.1.0_01
S-90P0112SMA
P-CHANNEL POWER MOS FET FOR SWITCHING
OD
UC
T
The S-90P0112SMA is an P-channel power MOS
FET that realizes a low on-state resistance and ultra
high-speed switching characteristics. It is suitable for
speeding up switching, enabling a high efficient set
and energy saving. A gate protection diode is built in
as a countermeasure for static electricity. Small
SOT-23-3 package realize high-density mounting.
This product can be driven directly by a −2.5 V
power source. If use this product in combination with
SII switching regulator products, you can get the
highest performance.
„ Features
„ Applications
• SOT-23-3
„ Item code
PR
: S-90P0112SMA-TF
: Taping only
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• Item code
• Delivery form
(Package drawing code: MP003-A)
SC
„ Packages
SOT-23-3
ON
TI
• Notebook PCs
• Cellular and portable phones
• On-board power supplies
−2.5 V drive available
D
• Ultra high-speed switching
• Operational voltage:
• Built-in gate protection diode
• Small package:
RDS(on)1 = 0.27 Ω Max. (VGS = −4.5 V, ID = −0.4 A)
RDS(on)2 = 0.45 Ω Max. (VGS = −2.5 V, ID = −0.4 A)
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• Low on-state resistance:
Seiko Instruments Inc.
1
P-CHANNEL POWER MOS FET FOR SWITCHING
S-90P0112SMA
Rev.1.0_01
„ Pin Configuration
Table
SOT-23-3
Top view
3
1
Symbol
G
S
D
Description
Gate pin
Source pin
Drain pin
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Pin No.
1
2
3
1
2
1
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Figure
PR
„ Equivalent Circuit
D (Drain)
Gate
Protection
Diode
Figure
2
ON
TI
S (Source)
D
G (Gate)
Caution The diode connected between the gate and source of the
transistor serves as a protector against electrostatic
discharge. Do not apply an electrostatic discharge to this
IC that exceeds the performance ratings of the built-in
gate protection diode.
And when this device actually used, an additional
protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this
device.
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Body
Diode
„ Absolute Maximum Ratings
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Item
Drain to source voltage
(When between gate and source short circuits)
Gate to source voltage
(When between drain and source short
circuits)
Drain current (DC)
Drain current (Pulse)
Reverse drain current
Power dissipation *1, *2
Channel temperature
Storage temperature
Table
2
(Ta = 25°C unless otherwise specified)
Conditions
Ratings
Unit
Symbol
VDSS
VGS = 0 V
−20
VGSS
VDS = 0 V
±12
ID
IDP
IDR
PD
Tch
Tstg
PW = 10 µs, Duty Cycle≤1%
−0.7
−2.8
−0.7
1.1
150
−55 to +150
V
A
W
°C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
*1. Mounted on a ceramics board (1225 mm2 × 1 mm)
*2. The allowable power dissipation differs depending on the mounting form.
2
Seiko Instruments Inc.
P-CHANNEL POWER MOS FET FOR SWITCHING
S-90P0112SMA
Rev.1.0_01
„ Electrical Characteristics
DC characteristics
Table
Symbol
Drain cut-off current
Gate to source leakage current
Gate to source cut-off voltage
Drain to source on-state resistance *1
IDSS
IGSS
VGS(off)
RDS(on)1
RDS(on)2
|Yfs|
Vf
Forward transfer admittance *1
Body drain diode forward voltage
(Ta = 25°C unless otherwise specified)
Min.
Typ.
Max.
Unit


−10
µA
VDS = −20 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
±10


V
−0.5

−1.2
ID = −1 mA, VDS = −10 V
0.20
0.27

Ω
ID = −0.4 A, VGS = −4.5 V
0.32
0.45

ID = −0.4 A, VGS = −2.5 V
1.5
S


ID = −0.4 A, VDS = −10 V
V

−0.8
−1.1
If = −0.7 A, VGS = 0 V
Conditions
UC
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Item
3
Dynamic characteristics
Table
Ciss
Coss
Crss
Conditions
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ON
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Input capacitance
Output capacitance
Feedback capacitance
(Ta = 25°C unless otherwise specified)
Min.
Typ.
Max.
Unit
200
pF


VDS = −10 V, VGS = 0 V,
f = 1 MHz
70


60


PR
Symbol
D
Item
4
OD
*1. Effective during pulse test (600 µs).
Seiko Instruments Inc.
3
P-CHANNEL POWER MOS FET FOR SWITCHING
S-90P0112SMA
Rev.1.0_01
Switching characteristics
Table
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
D.U.T.
PG.
RL
(Ta = 25°C unless otherwise specified)
Min.
Typ.
Max.
Unit
10
ns


VGS = −5 V, ID = −0.4A,
40


VDD = −10 V
85


80


Conditions
0
VGS
Wave Form
10 %
0
τ
10 %
90 %
VGS
td(on)
τ = 10 µs
Duty Cycle ≤ 1 %
tr
td(off)
90 %
tf
3
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D
Figure
10 %
VDS
PR
0
VGS
90 %
VDD
VDS
Wave Form
UC
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Symbol
OD
Item
5
Thermal characteristics
Table
Thermal resistance
(Channel to ambience)
„ Precautions
Symbol
Rth(ch-a)
ON
TI
Item
6
(Ta = 25°C unless otherwise specified)
Min.
Typ.
Max.
Unit
Conditions
Mounted on a ceramics board
(1225 mm2 × 1 mm)

107

°C/W
SC
• The application conditions for the input voltage, output voltage, and load current should not exceed the
allowable power dissipation after mounting.
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• SII claims no responsibility for any disputes arising out of or in connection with any infringement by
products including this IC of patents owned by a third party.
4
Seiko Instruments Inc.
P-CHANNEL POWER MOS FET FOR SWITCHING
S-90P0112SMA
Rev.1.0_01
„ Typical Characteristics
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
Pulse test (600 µs), Ta = 25°C
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
Pulse test (600 µs), VDS = −10 V
–3.0
–3.0
VGS = –2.5 V
–2.0 V
–5.0 V
–4.5 V
–4.0 V
–3.5 V
–3.0 V
–1.0
–1.5 V
–0.5
0
–0.5
–1.5
–1.0
–2.0
–2.5
–3.0
0
0.30
0.25 ID = –0.4 A
0.20
0.15
0.10
0.05
0
–2
–6
–4
0.1
0
–1
ID = –0.7 A
ID = –0.4 A
VGS = –2.5 V
0.25
0.20
0.15
0.10
ID = –0.4 A, –0.7 A
VGS = –4.5 V
0.05
GATE TO SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
VDS = −10 V, ID = −1 mA
0.4
0.3
0.2
0.1
0
–0.1
–0.2
–0.3
–0.4
0
–50 –25
–3
–2
Drain Current ID [A]
Gate to Source Cut-off Voltage Variance
VGS(off) Variance [V]
SC
0.30
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Drain to Source On-State Resistance
RDS(on) [Ω]
0.35
–3.0
–4.5 V
–10
–8
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
Pulse test (600 µs)
0.40
–2.5
VGS = –2.5 V
Gate to Source Voltage VGS [V]
0.45
–2.0
PR
Drain to Source On-State Resistance
RDS(on) [Ω]
–0.7 A
–1.5
1
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0.45
0.35
–1.0
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse test (600 µs), Ta = 25°C
D
0.50
0.40
–0.5
Gate to Source Voltage VGS [V]
ON
TI
Drain to Source On-State Resistance
RDS(on) [Ω]
–1.0
0
0
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
Pulse test (600 µs), Ta = 25°C
0.50
125 °C
–55 °C
–1.5
–0.5
Drain to Source Voltage VDS [V]
0
–2.0
OD
–1.5
25 °C
UC
T
–2.0
–2.5
Drain Current ID [A]
Drain Current ID [A]
–2.5
0
25
50
75
100 125 150
Ambient Temperature Ta [°C]
–50
0
50
100
150
Ambient Temperature Ta [°C]
Seiko Instruments Inc.
5
P-CHANNEL POWER MOS FET FOR SWITCHING
S-90P0112SMA
Rev.1.0_01
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING TIME vs. DRAIN CURRENT
VGS = −5 V, VDD = −10 V, PW = 10 µs,
Duty Cycle≤1%, Ta = 25°C
VGS = 0 V, f = 1 MHz, Ta = 25°C
1000
Coss
100
10
–5
0
–10
10
td(on)
0.1
GATE TO SOURCE VOLTAGE vs. GATE CHARGE
VDS = −10 V, ID = −0.7 A, Ta = 25°C
Drain Current −ID [A]
REVERSE DRAIN CURRENT vs. SOURCE TO DRAIN VOLTAGE
Pulse test (600 µs), Ta = 25°C
–3
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–8
–6
–2
0
0
1
2
3
ON
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–4
4
5
6
Reverse Drain Current IDR [A]
D
–10
7
VGS = –4.5 V
–2
–2.5 V
–1
0V
4.5 V
0
Gate Charge Qg [nC]
0
–0.2
–0.4
–0.6
SC
DI
Standardized Transition Thermal Resistance
1
Single Pulse
0.1
0.01
0.1
1
–0.8
Source to Drain Voltage VSD [V]
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
2
Rth(ch-a) = 107°C/W, Ta = 25°C, Mounted on a ceramics board (1225 mm × 1 mm)
10
Pulse Width PW [s]
6
10
1
PR
Drain to Source Voltage VDS [V]
Gate to Source Voltage VGS [V]
tr
1
0.01
–20
–15
tf
OD
Crss
td(off)
100
UC
T
Ciss
Switching Time t [ns]
Capacitance Ciss, Coss, Crss [pF]
1000
Seiko Instruments Inc.
100
1000
–1.0
P-CHANNEL POWER MOS FET FOR SWITCHING
S-90P0112SMA
Rev.1.0_01
„ Marking Specification
SOT-23-3
Top view
3
(1)∼(3)
(4)

2
PR
: Product code (Refer to Product name vs. Product code)
: Lot number
D
Product name vs. Product code
Product code
Product name
(1)
(2)
(3)
S-90P0222SUA-TF
O
N
W
S-90P0332SUA-TF
O
N
X
3
The mark  shows the product indicated in this data sheet.
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ON
TI
Remark
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1
(1)∼(3)
(4)∼(6)
(4) (5) (6)
(1) (2) (3)
SOT-89-3
Top view
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2
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1
Product name vs. Product code
Product code
Product name
(1)
(2)
(3)
S-90P0112SMA-TF
O
N
S
UC
T
(1) (2) (3) (4)
: Product code (Refer to Product name vs. Product code)
: Lot number
Seiko Instruments Inc.
7
UC
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2.9±0.2
2
0.95±0.1
0.16 +0.1
-0.05
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ON
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0.4±0.1
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D
1.9±0.2
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1
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3
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No. MP003-A-P-C2-1.0
TITLE
SOT233-A-PKG Dimensions
MP003-A-P-C2-1.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
+0.1
-0.05
4.0±0.1
2.0±0.1
0.25±0.05
1.6±0.1
4.0±0.1
PR
1.1±0.1
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1.5
1
ON
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2
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D
2.85±0.2
Feed direction
No. MP003-A-C-C2-1.0
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3
TITLE
No.
SOT233-A-Carrier Tape
MP003-A-C-C2-1.0
SCALE
UNIT
mm
Seiko Instruments Inc.
Enlarged drawing in the central part
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D
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12.5max.
9.0±0.3
ON
TI
ø13±0.2
(60°)
No. MP003-A-R-SD-1.1
DI
SC
(60°)
TITLE
SOT233-A-Reel
No.
MP003-A-R-SD-1.1
SCALE
UNIT
QTY.
3,000
mm
Seiko Instruments Inc.
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•
•
•
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ON
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•
The information described herein is subject to change without notice.
Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus
installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.
Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
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•
•