Survey
* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Electromagnetic compatibility wikipedia , lookup
Voltage optimisation wikipedia , lookup
Current source wikipedia , lookup
Portable appliance testing wikipedia , lookup
Surge protector wikipedia , lookup
Buck converter wikipedia , lookup
Alternating current wikipedia , lookup
Mains electricity wikipedia , lookup
Stray voltage wikipedia , lookup
Resistive opto-isolator wikipedia , lookup
Steady State Total Dose Irradiation Test Report FBG10N05 ABSTRACT April 14th, 2016 Freebird Semiconductor Confidential Page 1 of 13 Copyright (C) 2017 Freebird Semiconductor This document contains information proprietary to Freebird Semiconductor, and it is issued on condition that it is received and held in confidence. Neither it nor the information herein shall be reproduced, sold, lent, disclosed or used for any purpose other than that for which it has been issued without written authority of Freebird Semiconductor. Contents 1.0 Executive Summary ........................................................................................................................................................... 3 1.1 Test Results Summary ................................................................................................................................................... 3 2.0 Background ....................................................................................................................................................................... 3 3.0 References ........................................................................................................................................................................ 4 4.0 Handling Precautions. ....................................................................................................................................................... 4 5.0 Procedure .......................................................................................................................................................................... 5 6.0 Gamma Test Results.......................................................................................................................................................... 6 6.1 Bias Circuit..................................................................................................................................................................... 6 6.2 Dosimetry. ..................................................................................................................................................................... 7 Fig 3. Dosimeter Prototype Board .......................................................................................................................................... 7 Table 1. Dose Rate and Uniformity ......................................................................................................................................... 7 7.0 Gamma test results ........................................................................................................................................................... 8 7.1 Total Dose Response. .................................................................................................................................................... 8 7.1.1 Gate-to-Source Leakage Current (IGSS) Responses .......................................................................................... 8 7.1.2 Drain-to-Source Leakage Current (IDSS) Response ......................................................................................... 10 7.1.3 Threshold Voltage (VTH) Response ................................................................................................................ 11 7.1.4 On-State Resistance (RDSON) Response .......................................................................................................... 12 8.0 Summary ......................................................................................................................................................................... 12 Appendix A – Equipment list ................................................................................................................................................. 13 Freebird Semiconductor Confidential Page 2 of 13 1.0 Executive Summary Freebird evaluated the radiation performance of the FBG10N05X 100 Volts 5 Ampere Enhancement Gallium Nitride power switching HEMT FET at VPTRad according to the test plan FBS-P-603-16-008. This report covers the total dose (Gamma) characterization portion of the test plan for wafer lot C5A08H47.2 wafer RLUJP054. Section 5 discusses the test procedure; and Section 6.0 discusses the test results. Appendix A provides test notes and setup information from VPTRad. Freebird Semiconductor performed gamma irradiations under two different bias conditions: Bias 1: VGS = 5 V and VDS = 0 V (On-State Bias) Bias 2: VGS = 0 V and VDS = 80 V (Off-State Bias) 1.1 Test Results Summary Two packages per bias were characterized (S/N 3, 4, 5 and 6) in accordance with Freebird test plan FBS-P603-16-008. No failures where observed up to an accumulated ionizing dose of 1.0 Mrad using a nominal dose rate of 135rad/sec. None of the electrical parameters exceeded the specified limits of the datasheet due to gamma irradiation; the measured electrical parameters after each incremental dose were: - Gate-to-Source leakage current (IGSS) Drain-to-Source leakage current (IDSS) Threshold voltage (VTH) On-state resistance (RDSON) 2.0 Background The FBG10N05 is an enhancement mode Gallium Nitride High Electron Mobility Transistor (HEMT) developed by EPC for Freebird under a dedicated source controlled and in Fab screening. The FBG10N05 is the smaller size die of Freebird 100V platform and was screened to a total dose level of 1 Mrad. Freebird Semiconductor Confidential Page 3 of 13 3.0 References The major applicable documents, used to perform this gamma irradiation characterization are: MIL-PRF-19500 General Specifications for Semiconductor Devices MIL-STD-750D Test Methods for Semiconductor Devices Method 1019 Steady State Total Dose Irradiation Procedure Method 3421 On-State Resistance Method 3403 FET Threshold Voltage Measurement Method 3405 Drain to Source On-State Voltage Method 3411 Gate to Source Leakage Current Method 3415 Drain to Source Leakage current FBS-P-603-16-008 FBG10N05 VPTRad Freebird Semiconductor Test Plan Freebird Datasheet Rev Q VPTRad operating instructions 4.0 Handling Precautions. The following handling precautions were observed. 4.1 Proper ESD handling the devices according to their rating 4.2 Maximum rated voltages during irradiation were not exceeded 4.3 Devices were stored within antistatic boxes Freebird Semiconductor Confidential Page 4 of 13 5.0 Procedure Test conditions were performed as specified by Freebird Test Plan FBS-P-603-16-008 using the applicable test circuit. Irradiations were performed at the ambient temperature of the irradiator system. Figure 1 shows the insitu bias circuit as defined in the test plan. Bias 1: VGS = 5 V and VDS = 0 V (On-State Bias) Bias 2: VGS = 0 V and VDS = 80 V (Off-State Bias) Devices were placed in the (Co-60 Gamma Cell) irradiator with the appropriate bias applied. The devices were then irradiated to the following accumulated dose levels. a) 0 kRad b) 300 kRad c) 500 kRad d) 1000 kRad Upon completion of each exposure level, the devices were removed from the irradiator, electrically tested, and returned to the gamma irradiator for the next exposure level. Figure 1. Test circuit for insitu TID testing Freebird Semiconductor Confidential Page 5 of 13 6.0 Gamma Test Results 6.1 Bias Circuit. Freebird used VPTRad the Standard TO-254 irradiation board which conformed to the test circuit shown in figure 1. Figure 2 shows a picture of the VPTRad To-254 test board. Figure 2. Photograph of Insitu Bias Board Used during TID Irradiations and Freebird test coupon. Freebird Semiconductor Confidential Page 6 of 13 6.2 Dosimetry. Radiation dosimetry at VPT Rad is performed using an alanine Electron Paramagnetic Resonance (EPR) dosimetry system. The EPR spectrometer uses a variable magnetic field to detect the energy level transitions of unpaired electrons at specific resonant frequencies. The radiation dosimeters for the EPR system incorporate the amino acid alanine. When exposed to ionizing radiation, the alanine molecule forms a very stable free radical that is detectable by the EPR system. The EPR signal strength is then converted into TID dose via a NIST calibration that is performed over the operational ranges of the system. Table 1 lists the response of the dosimeters for a two back to back prototype boards as shown in fig 3. The average dose was 133 rad/sec Fig 3. Dosimeter Prototype Board Table 1. Dose Rate and Uniformity Freebird Semiconductor Confidential Page 7 of 13 7.0 Gamma test results 7.1 Total Dose Response. Four packages were characterized to Gamma radiation using a Co-60 Gamma Cell Irradiator at VPTRad. A nominal dose rate of 135 rad/sec was used. The sections below will discuss the testing of each of the six electrical parameters and their test results. 7.1.1 Gate-to-Source Leakage Current (IGSS) Responses The average gate-to-source leakage current response of these four devices is shown in Figures 3a and 3b. Figure 3a depicts the forward leakage current with an applied gate of +5V and Figure 3b depicts the reverse gate to source leakage current with an applied gate of -5V. This measured response showed that, for any of the two bias conditions, the gate-to-source leakage current remained below the 2mA and 60µA specification limit up to a total ionizing dose of 1 Mrd. Figure 3a. Forward Gate-to-Source Leakage Current Response to Total Ionizing Dose Freebird Semiconductor Confidential Page 8 of 13 Figure 3b. Reverse Gate-to-Source Leakage Current Response to Total Ionizing Dose Freebird Semiconductor Confidential Page 9 of 13 7.1.2 Drain-to-Source Leakage Current (IDSS) Response The drain-to-source leakage current response of the four devices is shown in Figure 4. The drain-to-source leakage current was measured at a drain voltage of 80 volts. The measured response clearly showed that, for the two bias conditions, the drain-to-source leakage current did not exceed the 60 µA specification limit up to a total ionizing dose of 1 Mrad. Figure 5. Drain-to-Source Leakage at 80% rated Voltage Response to Total Ionizing Dose Freebird Semiconductor Confidential Page 10 of 13 7.1.3 Threshold Voltage (VTH) Response Figure 6 shows the measured threshold voltage response of the four devices. Threshold voltage was measured at a drain current of 2 mA for all bias conditions. The measured response showed that the threshold voltage did not exceed the 2.5V specify limit up to 1Mrad. Drain to Source bias was very stable with very little shift while the gate to source showed a slight increase in threshold voltage. Figure 6. Threshold Voltage Response to Total Ionizing Dose Freebird Semiconductor Confidential Page 11 of 13 7.1.4 On-State Resistance (RDSON) Response Figure 7 shows the measured on-state resistance response of the four devices. On-state resistance was measured at a gate voltage of 5 V and a drain current of 5 A. The measured response clearly shows an increase in the on-state resistance the first 100 kRad and then stabilizes as the devices are further subjected to gamma radiation; but still below the 32mΩ specification limit. The observed increase in on-state resistance has been attributed to the dynamic Rdson of the GaN technology under DC bias. Figure 7. On-State Resistance Response to Total Ionizing Dose 8.0 Summary Four devices were characterized (S/N 3, 4, 5, and 6). No failures where observed up to an accumulated ionizing dose of 1.0 Mrad using a nominal dose rate of 135 rad/sec. Measured electrical parameters after each incremental dose did not exceed the specified electrical parameters in the datasheet. Freebird Semiconductor Confidential Page 12 of 13 Appendix A – Equipment list Insitu bias Irradiation: Keithley 2400 Keithley 2400 (Drain Bias Voltage) (Gate Bias Voltage) Electrical Measurements STI5000 Custom Boards VPTRad custom Insitu Bias Board Freebird Semiconductor Confidential Page 13 of 13