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IRFIB6N60A, SiHFIB6N60A
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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low gate charge Qg results in simple drive
requirement
Available
• Improved gate, avalanche and dynamic dV/dt
ruggedness
Available
• Fully characterized capacitance and avalanche
voltage and current
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
600
RDS(on) ()
VGS = 10 V
Qg max. (nC)
0.75
49
Qgs (nC)
13
Qgd (nC)
20
Configuration
Single
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
D
TO-220 FULLPAK
G
G D S
APPLICATIONS
•
•
•
•
S
N-Channel MOSFET
Switch mode power supply (SMPS)
Uninterruptible power supply
High speed power switching
High voltage isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)
TYPICAL SMPS TOPOLOGIES
• Single transistor forward
• Active clamped forward
ORDERING INFORMATION
Package
TO-220 FULLPAK
IRFIB6N60APbF
Lead (Pb)-free
SiHFIB6N60A-E3
IRFIB6N60A
SnPb
SiHFIB6N60A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
VGS at 10 V
Continuous Drain Current
Pulsed Drain
TC = 25 °C
TC = 100 °C
Current a
ID
IDM
Linear Derating Factor
UNIT
V
5.5
3.5
37
0.48
W/°C
mJ
Single Pulse Avalanche Energy b
EAS
290
Repetitive Avalanche Current a
IAR
9.2
A
Repetitive Avalanche Energy a
EAR
6.0
mJ
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
Mounting Torque
d
for 10 s
6-32 or M3 screw
PD
60
W
dV/dt
5.0
V/ns
TJ, Tstg
-55 to +150
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 6.8 mH, RG = 25 , IAS = 9.2 A (see fig. 12).
c. ISD  9.2 A, dI/dt  50 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
S16-0763-Rev. D, 02-May-16
Document Number: 91175
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
65
Maximum Junction-to-Case (Drain)
RthJC
-
2.1
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA d
-
660
-
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
-
-
25
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
250
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
μA
-
-
0.75

gfs
VDS = 25 V, ID = 5.5 A
5.5
-
-
S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1400
-
-
180
-
-
7.1
-
VDS = 1.0 V, f = 1.0 MHz
-
1957
-
VDS = 480 V, f = 1.0 MHz
-
49
-
-
96
-
-
-
49
-
-
13
-
-
20
-
13
-
-
25
-
-
30
-
-
22
-
0.5
-
3.2
-
-
5.5
-
-
37
RDS(on)
ID = 3.3 A b
VGS = 10 V
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
VGS = 0 V
Coss eff.
Effective Output Capacitance
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Gate Input Resistance
Rg
VDS = 0 V to 480
VGS = 10 V
Vc
ID = 9.2 A, VDS = 400 V,
see fig. 6 and 13 b
VDD = 300 V, ID = 9.2 A,
RG = 9.1, RD = 35.5,
see fig. 10 b
f = 1 MHz, open drain
pF
nC
ns

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 9.2 A, VGS = 0 V b
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b
-
-
1.5
V
-
530
800
ns
-
3.0
4.4
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
d. t = 60 s, f = 60 Hz.
S16-0763-Rev. D, 02-May-16
Document Number: 91175
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
1
4.7V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
TJ = 25 ° C
1
0.1
4.0
100
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
10
4.7V
20µs PULSE WIDTH
TJ = 150 °C
10
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
S16-0763-Rev. D, 02-May-16
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
1
5.0
6.0
7.0
8.0
9.0
10.0
Fig. 3 - Typical Transfer Characteristics
TOP
1
V DS = 50V
20µs PULSE WIDTH
VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100
TJ = 150 ° C
ID = 9.2A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91175
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
2400
100
ISD , Reverse Drain Current (A)
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
2000
C, Capacitance (pF)
Vishay Siliconix
iss
1600
oss
1200
800
rss
400
0
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
A
1
10
100
1000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1.0
1.2
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
ID = 9.2A
OPERATION IN THIS AREA LIMITED
BY RDS(on)
VDS = 480V
VDS = 300V
VDS = 120V
16
100
I D , Drain Current (A)
VGS , Gate-to-Source Voltage (V)
0.7
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
20
V GS = 0 V
0.5
12
8
10us
10
100us
1ms
1
10ms
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-0763-Rev. D, 02-May-16
0.1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91175
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix
RD
VDS
6.0
VGS
ID , Drain Current (A)
D.U.T.
RG
5.0
+
- VDD
10 V
4.0
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
3.0
Fig. 10a - Switching Time Test Circuit
2.0
VDS
90 %
1.0
0.0
25
50
75
100
125
150
10 %
VGS
TC , Case Temperature ( °C)
t d(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
tr
t d(off) t f
Fig. 10b - Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
t1
0.02
t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0763-Rev. D, 02-May-16
Document Number: 91175
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix
V DS
tp
15 V
Driver
L
VDS
D.U.T.
RG
+
A
- VDD
IAS
20 V
tp
A
0.01 Ω
I AS
Fig. 12b - Unclamped Inductive Waveforms
EAS , Single Pulse Avalanche Energy (mJ)
Fig. 12a - Unclamped Inductive Test Circuit
600
TOP
500
BOTTOM
ID
4.1A
5.8A
9.2A
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
QG
50 kΩ
12 V
0.2 µF
0.3 µF
10 V
QGS
+
Q GD
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
Fig. 13a - Basic Gate Charge Waveform
S16-0763-Rev. D, 02-May-16
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Document Number: 91175
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel









Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91175.
S16-0763-Rev. D, 02-May-16
Document Number: 91175
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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
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Revision: 08-Feb-17
1
Document Number: 91000