Download Si4967DY

Si4967DY
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.023 at VGS = - 4.5 V
- 7.5
- 12
0.030 at VGS = - 2.5 V
- 6.7
0.045 at VGS = - 1.8 V
- 5.4
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs: 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
S1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G1
G2
Top View
D1
Ordering Information: Si4967DY-T1-E3 (Lead (Pb)-free)
Si4967DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
TA = 25 °C
TA = 70 °C
V
- 7.5
ID
- 6.1
IDM
- 30
IS
- 1.7
A
2.0
PD
W
1.3
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
t ≤ 10 s
Steady State
RthJA
Typical
Maximum
62.5
93
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
Document Number: 70813
S09-0867-Rev. D, 18-May-09
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Si4967DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 0.45
Typ.
Max.
Unit
± 100
nA
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS ≥ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 7.5 A
0.019
0.023
RDS(on)
VGS = - 2.5 V, ID = - 6.7 A
0.024
0.030
VGS = - 1.8 V, ID = - 5.4 A
0.033
0.045
gfs
VDS = - 10 V, ID = - 7.5 A
27
VSD
IS = - 1.7 A, VGS = 0 V
- 0.7
- 1.2
35
55
Gate Threshold Voltage
Drain-Source On-State Resistance
a
Forward Transconductancea
Diode Forward Voltage
a
V
VDS = - 12 V, VGS = 0 V
-1
VDS = - 12 V, VGS = 0 V, TJ = 70 °C
-5
- 20
µA
A
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = - 6 V, VGS = - 10 V, ID = - 7.5 A
Gate-Drain Charge
Qgd
7
Turn-On Delay Time
td(on)
25
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDD = - 6 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
IF = - 1.7 A, dI/dt = 100 A/µs
nC
7
50
40
80
210
350
95
150
50
80
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70813
S09-0867-Rev. D, 18-May-09
Si4967DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
VGS = 5 V thru 2.5V
2V
24
I D - Drain Current (A)
I D - Drain Current (A)
24
18
12
1.5 V
6
18
12
TC = 125 °C
6
25 °C
- 55 °C
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
7000
0.10
C - Capacitance (pF)
R DS(on) - On Resistance (Ω)
6000
0.08
0.06
VGS = 1.8 V
0.04
VGS = 2.5 V
Ciss
5000
4000
3000
2000
Coss
0.02
1000
VGS = 4.5 V
0
6
12
18
24
0
30
3
6
9
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
12
1.5
5
VGS = 4.5 V
ID = 7.5 A
VDS = 6 V
ID = 7.5 A
4
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
Crss
0
0.00
3
2
1.2
0.9
1
0
0
8
16
24
32
40
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 70813
S09-0867-Rev. D, 18-May-09
150
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Si4967DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
0.10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TJ = 150 °C
10
0.08
0.06
0.04
ID = 7.5 A
0.02
TJ = 25 °C
0.00
1
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
3
4
5
On-Resistance vs. Gate-to-Source Voltage
30
0.4
ID = 250 µA
0.3
25
20
0.2
Power (W)
V GS(th) Variance (V)
2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.1
15
0.0
10
- 0.1
5
- 0.2
- 50
1
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
100
600
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 93 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70813.
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Document Number: 70813
S09-0867-Rev. D, 18-May-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 08-Feb-17
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Document Number: 91000