Download SQM85N10-10 Automotive N-Channel 100 V (D

SQM85N10-10
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Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
100
RDS(on) () at VGS = 10 V
0.0105
RDS(on) () at VGS = 4.5 V
0.012
ID (A)
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
100
Configuration
• AEC-Q101 Qualifiedd
Single
• 100 % Rg and UIS Tested
D
• Compliant to RoHS Directive 2002/95/EC
TO-263
G
G
D S
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-263
Lead (Pb)-free and Halogen-free
SQM85N10-10-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
TC = 25 °Ca
Continuous Drain Current
Continuous Source Current (Diode
ID
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
Operating Junction and Storage Temperature Range
V
100
70
IS
100
IDM
400
IAS
75
EAS
280
PD
TC = 125 °C
UNIT
375
125
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB
Mountc
Junction-to-Case (Drain)
RthJA
40
RthJC
0.4
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S11-2035-Rev. D, 17-Oct-11
1
Document Number: 68789
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM85N10-10
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 μA
100
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VGS = 0 V
VDS = 100 V
-
-
1.0
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 100 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 100 V, TJ = 175 °C
-
-
500
On-State Drain Currenta
ID(on)
VGS = 10 V
VDS5 V
120
-
-
VGS = 10 V
ID = 30 A
-
0.007
0.0105
Gate-Source Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
VGS = 10 V
ID = 30 A, TJ = 125 °C
-
-
0.02
VGS = 10 V
ID = 30 A, TJ = 175 °C
-
-
0.026
VGS = 4.5 V
ID = 20 A
-
0.008
0.012
-
115
-
-
6440
8050
-
655
820
gfs
VDS = 15 V, ID = 30 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
315
395
Total Gate Chargec
Qg
-
122
185
Gate-Source Chargec
Qgs
-
23
-
Gate-Drain
Chargec
Gate Resistance
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 50 V, ID = 85 A
Qgd
pF
nC
-
28
-
f = 1 MHz
0.8
1.7
2.6
td(on)
-
13
20
tr
VDD = 50 V, RL = 0.6 
ID  85 A, VGEN = 10 V, Rg = 2.5 
-
14
21
-
44
66
-
10
15
-
-
400
A
-
0.9
1.5
V
Rg
td(off)
tf

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 85 A, VGS = 0
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2035-Rev. D, 17-Oct-11
2
Document Number: 68789
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM85N10-10
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
180
160
I D - Drain Current (A)
ID - Drain Current (A)
150
V GS = 10 V thru 4 V
120
80
120
TC = 125 °C
90
TC = - 55 °C
60
40
V GS = 3 V
30
TC = 25 °C
0
0
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
0
15
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.025
250
g fs - Transconductance (S)
R DS(on) - On-Resistance (Ω)
TC = - 55 °C
200
150
TC = 25 °C
100
TC = 125 °C
50
0.020
0.015
0.010
VGS = 4.5 V
VGS = 10 V
0.005
0.000
0
0
16
32
48
64
0
80
40
60
80
100
I D - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
120
10
8000
VGS - Gate-to-Source Voltage (V)
ID = 50 A
7000
C - Capacitance (pF)
20
ID - Drain Current (A)
9000
Ciss
6000
5000
4000
3000
2000
Coss
1000
0
5
Crss
0
8
VDS = 20 V
6
4
2
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
100
0
Capacitance
S11-2035-Rev. D, 17-Oct-11
20
40
60
80
100
Qg - Total Gate Charge (nC)
120
140
Gate Charge
3
Document Number: 68789
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM85N10-10
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.05
100
I S - Source Current (A)
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
10
TJ = - 50 °C
1
0.1
0.01
0.04
0.03
0.02
TJ = 150 °C
0.01
TJ = 25 °C
TJ = 25 °C
0.001
0.0
0.2
0.4
0
0.6
0.8
1.0
0
1.2
2
Source Drain Diode Forward Voltage
8
10
2.5
RDS(on) - On-Resistance (Normalized)
ID = 10 mA
VDS - Drain-to-Source Voltage (V)
6
On-Resistance vs. Gate-to-Source Voltage
130
125
120
115
110
105
100
- 50
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
ID = 30 A
2.0
VGS = 4.5 V
1.5
1.0
0.5
- 50
175
Breakdown Voltage vs. Junction Temperature
VGS = 10 V
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Normalized On-Resistance vs. Junction Temperature
0.5
V GS(th) Variance (V)
0.1
- 0.3
ID = 5 mA
- 0.7
ID = 250 µA
- 1.1
- 1.5
- 50
- 25
0
25
50
75 100
TJ - Temperature (°C)
125
150
175
Threshold Voltage Variance vs. Junction Temperature
S11-2035-Rev. D, 17-Oct-11
4
Document Number: 68789
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM85N10-10
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
ID - Drain Current (A)
100
Limited by RDS(on)*
100 µs
ID
Limited
10
1 ms
10 ms, 100 ms, 1 s, 10 s, DC
1
TC = 25 °C
Single Pulse
BVDSS Limited
0.1
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S11-2035-Rev. D, 17-Oct-11
5
Document Number: 68789
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM85N10-10
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68789.
S11-2035-Rev. D, 17-Oct-11
6
Document Number: 68789
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
1
Document Number: 91000