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159 Active Materia 6. Active Materials Guruswami Ravichandran This chapter provides a brief overview of the mechanics of active materials, particularly those which respond to electro/magnetic/mechanical loading. The relative competition between mechanical and electro/magnetic loading, leading to interesting actuation mechanisms, has been highlighted. Key references provided within this chapter should be referred to for further details on the theoretical development and their application to experiments. 6.1 Background ......................................... 159 6.1.1 Mechanisms of Active Materials........................ 160 6.1.2 Mechanics in the Analysis, Design, and Testing of Active Devices ......... 160 6.2 Piezoelectrics ....................................... 161 6.3 Ferroelectrics ....................................... 6.3.1 Electrostriction............................. 6.3.2 Theory ........................................ 6.3.3 Domain Patterns .......................... 6.3.4 Ceramics ..................................... 162 162 163 163 165 6.4 Ferromagnets....................................... 166 6.4.1 Theory ........................................ 166 6.4.2 Magnetostriction .......................... 167 References .................................................. 167 6.1 Background shown in Fig. 6.1 [6.1]. Active materials are widely used as sensors and actuators, including vibration damping, Work per volume (J/m3) 108 Experimental Theoretical Shape memory alloy 107 Solid–liquid 106 Fatigued SMA Thermopneumatic Ferroelectric EM ES Thermal expansion 5 10 PZT Electromagnetic (EM) 104 Muscle Electrostatic (ES) EM 3 10 102 0 10 ES Microbubble 101 102 103 ZnO 104 105 106 107 Cycling frequency (Hz) Fig. 6.1 Characteristics of common actuator systems (after Krulevitch et al. [6.1]) Part A 6 Active materials in the context of mechanical applications are those that respond by changing shape to external stimuli such as electro/magnetic-mechanical loading, which is in general reversible in nature. The change in shape results in mechanical sensing and actuation that can be exploited in a variety of ways for practical applications. The mechanics of actuation depends on a wide range of mechanisms, which generally depend on some form of phase transition or motion of phase boundaries under external stimuli. There are also active materials which respond to thermomechanical loading such as shape-memory alloys, which are not discussed here. This chapter is confined to materials which respond to electro/magnetic-mechanical loading such as piezoelectric, ferroelectric, and ferromagnetic solids. A common feature of these materials is that cyclic actuation takes place, often accompanied by hysteresis. The common figures of merit used to characterize actuator performance are the work/unit volume and the cycling frequency. The characteristics of common actuator materials/systems in this parameter space are 160 Part A Solid Mechanics Topics micro/nanopositioning, ultrasonics, sonar, fuel injection, robotics, adaptive optics, active deformable structures, and micro-electromechanical systems (MEMS) devices such as micropumps and surgical tools. a) ε E E 6.1.1 Mechanisms of Active Materials The mechanics of actuation for most solid-state active materials depend on one or a combination of the following effects, illustrated in Fig. 6.2a–c. • • • Piezoelectric effect (Fig. 6.2a) is a linear phenomenon in which the mechanical displacement (strain ε) is proportional to the applied field or voltage (E) and the sign of the displacement depends on the sign of the applied field. Electrostriction (Fig. 6.2b) is generally observed in dielectrics and most prominent in single-crystal ferroelectrics and ferroelectric polymers, where the displacement (strain ε) or actuation is a function of the square of the applied voltage (E) and hence the displacement is independent of the sign of the applied voltage. Magnetostriction (Fig. 6.2c) is similar to electrostriction except that the applied field is magnetic in nature, which is most common in ferromagnetic solids. The displacement (strain ε) in single-crystal magnetostrictive material is proportional to the square of the magnetic field (H). b) ε ±E E c) ε ±H H Fig. 6.2 (a) Piezoelectricity described by the converse piezoelectric effect is a linear relationship between strain (ε) and applied electric field (E). (b) Electrostriction is a quadratic relationship between strain (ε) and electric field (E), or more generally, an electric-field-induced deformation that is independent of field polarity. (c) Magnetostriction is a quadratic relationship between strain (ε) and the applied magnetic field (H), or more generally, a magnetic-field-induced deformation that is independent of field polarity Part A 6.1 trasonics, linear and rotary micropositioning devices, and sonar. Potential applications include microrobotics, active surgical tools, adaptive optics, and miniaturized actuators. The problems associated with active materials are multi-physics in nature and involve solving coupled boundary value problems. 6.1.2 Mechanics in the Analysis, Design, The formulation of boundary value problems in and Testing of Active Devices solid mechanics and the solution techniques have been discussed in Chap. 1 and will not be revisited here The quest for the design and analysis of efficient except to restate some of the governing equations inand compact devices for actuation in the form of volving linearized theory and the appropriate boundary micro/nano-electromechanical systems (MEMS/NEMS) conditions. The active materials of interest may undergo places considerable demands on the choice of mater- large deformations at the microstructural scale due ials, processing, and mechanics of actuation. Most of to various phase transformations (reorientation of unit the current applications of actuators except for a few cells); the macroscopic deformations generally do not specialized applications use piezoelectric materials. exceed a few percentage (ranging from 0.2% for piezoA detailed understanding of the various mechanisms electric, 1–6.5% for single-crystal ferroelectrics, and and mechanics of actuation in active materials will pave ≈ 0.1% for single-crystal magnetostrictive solids). Linthe way for the design of new actuation devices, ad- earized theory of elasticity is used throughout, which vancing further application of this promising class of suffices for most experimental design and applications. materials and other emerging multiferroic materials. Appropriate references for provided for readers who The current applications of these materials include ul- are interested in using rigorous large-strain (finiteThough the electrostrictive and magentostrictive effects are most evident in single-crystal materials, they also play an important role in polycrystalline solids, where these effects are influenced by the texture (orientation) of the various crystals in the solid. Active Materials deformation) formulations. For the basic notions of materials science such as the unit cell, crystallography, and texture, the reader is referred to Chap. 2. The parameters of interest in solid mechanics for the active materials (occupying a volume V , with surface denoted by S) include the Cauchy stress tensor (σ ), the small-strain tensor ε(εij = 12 (u i, j + u j,i )), and the strain energy density W. The materials are assumed to be linearly elastic solids characterized by the fourth-order elastic moduli tensor C. The Cauchy stress is related to the strain through the elastic moduli σij = Cijkl εkl . The mechanical equilibrium of the stress state is governed by the following field equation σij, j + ρ0 bi = 0 in V . (6.1) The boundary conditions are characterized by the prescribed traction (force) vector (t 0 ) on S2 and/or the displacement vector (u0 ) on S1 . The traction on a surface is related to the stress through the Cauchy relation, t i = σij n j , where n is the unit outward normal to the surface. ρ0 is the mass density and b is the body force per unit mass. 6.2 Piezoelectrics 161 The parameters of interest in the electromechanics of solids include the polarization ( p) and the electrostatic potential (φ). The governing equation for the electrostatic potential is expressed by Gauss’s equation ∇ · (−ε0 ∇φ + p) = 0 in V , (6.2) where ε0 is the permittivity. The boundary conditions on the electrostrictive solid are characterized by the conductors in the form of the electric field on the electrodes (∇φ = 0 on C1 ), including the ground ( S ∂φ ∂n dS = 0 and φ = 0 on C2 ). The parameters of interest in the magnetomechanics of solids include the magnetization (m) and the induced magnetic field (H). The governing equations are given by ∇ × H = 0, ∇ · (H + 4πm) = 0 in V , (6.3) An important aspect of electro(magnetic) active materials is that the electro(magnetic) field permeates the space (R3 ) surrounding the body that is polarized (magnetized). 6.2 Piezoelectrics Di = dijk σ jk , (6.4) where σ is the stress tensor and D is the electric displacement vector, which is related to the polarization p according to Di = pi + ε0 E i , (6.5) where E is the electric field vector [6.3]. For materials with large spontaneous polarizations, such as ferroelectrics, the electric displacement is approximately equal to the polarization (D ≈ p). For actuators, a more common representation of piezoelectricity is the converse piezoelectric effect. This is a linear relationship between strain and electric field, as shown in Fig. 6.1a and in the following equation at constant stress, eij = dijk E k , (6.6) where e is the strain tensor and d is the same as in (6.4). These relationships are often expressed in matrix notation as Di = dij σ j , e j = dij E i , σ j = sij E i , (6.7) (6.8) (6.9) where s is the matrix of piezoelectric stress constants [6.2, 3]. The parameters commonly used to characterize the piezoelectric effect are the constants d3i (in particular, d33 ), which are measures of the coupling between the applied voltage and the resultant strain in the specimen. Part A 6.2 Piezoelectricity is a property of ferroelectric materials, as well as many non-ferroelectric crystals, such as quartz, whose crystal structure satisfy certain symmetry criteria [6.2]. It also exists in certain ceramic materials that either have a suitable texture or exhibit a net spontaneous polarization. The most common piezoelectric materials which are widely used in applications include lead zirconate titanate (PZT, Pb(Zr,Ti)O3 ) and lead lanthanum zirconate titanate (PLZT, Pb(La,Zr,Ti)O3 ). Many polymers such as polyvinylidene fluoride (PVDF) and its copolymers with trifluoroethylene (TrFE) and tetrafluoroethylene (TFE) also exhibit the piezoelectric effect. The typical strain achievable in the common piezoelectric solids is in the range of 0.1–0.2%. The direct piezoelectric effect is defined as a linear relationship between stress and electric displacement or charge per unit area, 162 Part A Solid Mechanics Topics 6.3 Ferroelectrics The term ferroelectric relates not to a relationship of the material to the element iron, but simply a similarity of the properties to those of ferromagnets. Ferroelectrics exhibit a spontaneous, reversible electrical polarization and an associated hysteresis behavior between the polarization and electric field [6.4–6]. Much of the terminology associated with ferroelectrics is borrowed from ferromagnets; for instance, the transition temperature below which the material exhibits ferroelectric behavior is referred to as the Curie temperature. The ferroelectric phenomenon was first discovered in Rochelle salt (NaKC4 H4 O6 · 4H2 O). Other common examples of ferroelectric materials include barium titanate (BaTiO3 ), lead titanate (PbTiO3 ), and lithium niobate (LiNbO3 ). Materials of the perovskite structure (ABO3 ) appear to have the largest electrostriction and spontaneous polarization. 6.3.1 Electrostriction Electrostriction, in its most general sense, means simply electric-field-induced deformation. However, the term is most often used to refer to an electric-field-induced deformation that is proportional to the square of the electric field, as illustrated in Fig. 6.1b, εij = Mijkl E k El . (6.10) Part A 6.3 This effect does not require a net spontaneous polarization and, in fact, occurs for all dielectric materials [6.5]. The effect is quite pronounced in some ferroelectric ceramics, such as Pb(Mgx Nb1−x )O3 (PMN) and (1 − x)[Pb(Mg1/3 Nb2/3 )O3 ] − xPbTiO3 (PMN-PT), which generate strains much larger than those of piezoelectric PZT. The term electrostriction will be defined in a more general sense as electric-field-induced deformation that is independent of electric field polarity. As mentioned earlier, piezoelectricity exists in polycrystalline ceramics which exhibit a net spontaneous polarization. For a ferroelectric ceramic, while each grain may be microscopically polarized, the overall material will not be, due to the random orientation of the grains [6.2, 7]. For this reason, the ceramic must be poled under a strong electric field, often at elevated temperature, in order to generate the net spontaneous polarization. The ceramic is exposed to a strong electric field, generating an average polarization. The most interesting property of a ferroelectric solid is that it can be depolarized by an electric field and/or stress. It is this property which can be exploited effectively in achieving large electrostriction [6.6]. Poling involves the reorientation of domains within the grains. In the case of PZT it may also involve polarization rotations due to phase changes. PZT is a solid solution of lead zirconate and lead titanate that is often formulated near the boundary between the rhombohedral and tetragonal phases (the so-called morphotropic phase boundary). For these materials, additional polarization states are available as it can choose between any of the 100 polarized states of the tetragonal phase, the 111 polarized states of the rhombohedral phase, or the 11k polarized states of the monoclinic phase. The final polarization of each grain, however, is constrained by the mechanical and electrical boundary conditions presented by the adjacent grains. A typical polarization–electric field hysteresis curve for a ferroelectric material is shown in Fig. 6.3. The spontaneous polarization, P s , is defined by the extrapolation of the linear region at saturation back to the polarization axis. The remaining polarization when the electric field returns to zero is known as the remnant polarization P r . Finally, the electric field at which the polarization returns to zero is known as the coercive field E c [6.8]. Polarization Ps Pr Ec Electric field Fig. 6.3 Polarization–electric field hysteresis for ferro- electric materials. The spontaneous polarization (Ps ) is defined by the line extrapolated from the saturated linear region to the polarization axis. The remnant polarization (Pr ) is the polarization remaining at zero electric field. The coercive field (E c ) is the field required to reduce the polarization to zero Active Materials 6.3.2 Theory 163 W Based on the concepts for ferroelectricity postulated by Ginzburg and Landau, Devonshire developed a theory in which he treated strain and polarization as order parameters or field variables, which is collectively known as the Devonshire–Ginzburg–Landau (DGL) model [6.2, 9]. This theory was enormously successful in organizing vast amounts of data and providing the basis for the basic studies of ferroelectricity. The adaptation of this theory following Shu and Bhattacharya [6.10] is the most amenable in the context of mechanics and is described below. Consider a ferroelectric crystal V at a fixed temperature subject to an applied traction t 0 on part of its boundary S2 and an external applied electric field E 0 . The displacement u and polarization p of the ferroelectric are those that minimize the potential energy, 1 ∇ p · A∇ p + W(x, ε, p) − E0 · p dx Φ( p, u) = 2 V ε0 − t0 · u dS + (6.11) |∇φ|2 dx , 2 S2 6.3 Ferroelectrics R3 W(θ, ε, p) = χij pi p j + ωijk pi p j pk + ξijkl pi p j pk pl + ψijklm pi p j pk pl pm + ζijklmn pi p j pk pl pm pn + Cijkl εij εkl + aijk εij pk + qijkl εij pk pl + · · · , (6.12) where χij is the reciprocal dielectric susceptibility of the unpolarized crystal, Cijkl is the elastic stiffness tensor, aijk is the piezoelectric constant tensor, qijkl is the electrostrictive constant tensor, and the coefficients are functions of temperature [6.8]. Fig. 6.4 The multiwell structure of the energy of a ferro- electric solid with a tetragonal crystal structure as in the case of common perovskite crystals The third and fourth terms in (6.11) are the potentials associated with the applied electric field and mechanical load, respectively. The final term is the electrostatic field energy that is generated by the polarization distribution. For any polarization distribution, the electrostatic potential φ is determined by solving Gauss’s equation (6.2) in all space, subject to appropriate boundary conditions, especially those on conductors. Thus, this last term is nonlocal. Ferroelectric crystals can be spontaneously polarized and strained in one of K crystallographically equivalent variants below their Curie temperature. Thus, if ε(i) , p(i) are the spontaneous strain and polarization of the i-th variant (i = 1, . . . , K ), then the stored energy W is minimum (zero without loss of generality) on the K [(ε(i) , p(i) )] and grows away from it as shown Z = ∪i=1 in the bottom right of Fig. 6.4. 6.3.3 Domain Patterns A region of constant polarization is known as a ferroelectric domain. The orientation of polarization and strain in ferroelectric crystals is determined by the possible variants of the underlying crystal structure. For example Fig. 6.5a shows the six possible variants that can form by the phase transformation of a perovskite (ABO3 ) crystal from the high-temperature cubic phase to the tetragonal phase when cooled below the Curie temperature. Domains are separated by 90◦ or 180◦ domain boundaries (the angle denotes the orientation between the polarization vectors in adjacent domains, Fig. 6.5b), which can be nucleated or moved by electric field or stress (the ferroelastic effect). Domain patterns are commonly visualized using polarized light microscopy and are shown in Fig. 6.5c for BaTiO3 . The process of changing the polarization direction of a domain by nucleation and growth or domain wall motion is known as domain switching. Electric field can induce both 90◦ or 180◦ switching, while stress Part A 6.3 where A is a positive-definite matrix so that the first term above penalizes sharp changes in the polarization and may be regarded as the energetic cost of forming domain walls. The second term W is the stored energy density (the Landau energy density), which depends on the state variables or order parameters, the strain ε, and the polarization p, and also explicitly on the position x in polycrystals and heterogeneous media; W encodes the crystallographic and texture information, and may in principle be obtained from first-principles calculations based on quantum mechanics. It is traditional to take W to be a polynomial but one is not limited to this choice; for example, the energy density function W is assumed to be of the form, ε, p 164 Part A Solid Mechanics Topics can induce only 90◦ switching [6.11]. The domain wall structures in the mechanical and electrical domain have recently been experimentally measured using scanning probe microscopy [6.12], which is typically in the range of tens of nanometers. In light of the multiwell structure of W, minimization of the potential energy in (6.11) leads to domain patterns or regions of almost constant strain and polarization close to the spontaneous values separated by domain walls. The width of the domain walls is proportional to the square root of the smallest eigenvalue of A. If this is small compared to the size of the crystal, as is typical, then the domain wall energy has a negligible effect on the macroscopic behavior and may be dropped [6.10]. This leads to an ill-posed problem as the minimizers may develop oscillations at a very fine scale (Fig. 6.5b), however there has been significant recent progress in studying such problems in recent years, motivated by active materials. a) The minimizers of (6.11) for zero applied load and field are characterized by strain and polarization fields that take their values in Z. So one expects the solutions to be piecewise constant (domains) separated by jumps (domain walls). However the walls cannot be arbitrary. Instead, an energy-minimizing domain wall between variants i and j, i. e., an interface separating regions of strain and polarization (ε(i) , p(i) ) and (ε( j) , p( j) ) as shown in Fig. 6.5d, must satisfy two compatibility conditions [6.10], 1 ε( j) − ε(i) = (a ⊗ n + n ⊗ a) , 2 (6.13) ( p( j) − p(i) ) · n = 0 , where n is the normal to the interface. The first is the mechanical compatibility condition, which assures the mechanical integrity of the interface, and the second is the electrical compatibility conditions, which assures that the interface is uncharged and thus that energy minimizing. At first glance it appears impossible to solve these equations simultaneously: the first equation has at most two solutions for the vectors a and n, and there is no reason that these values of n should satisfy the second. It turns out however, that if the variants are related by two-fold symmetry, i. e., ε( j) = Rε(k) RT , 180◦ b) 90° boundary Part A 6.3 180° boundary c) d) n (ε(2), p (2)) (ε(1), p (1)) 100 μm Fig. 6.5 (a) Variants of cubic-to-tetragonal phase transformation, the arrows indicate the direction of polarization. (b) Schematic of 90◦ and 180◦ domains in a ferroelectric crystal. (c) Polarized-light micrograph of the domain pattern in barium titanate. (d) Schematic of a domain wall in a ferroelectric crystal ε( j) = Rp(k) , (6.14) for some rotation R, then it is indeed possible to solve the two equations (6.14) simultaneously [6.10]. It follows that the only domain walls in a 001c polarized tetragonal phase are 180◦ and 90◦ domain walls, and that the 90◦ domain walls have a structure similar to that of compound twins with a rational {110}c interface and a rational 110c shear direction. The only possible domain walls in the 110c polarized orthorhombic phase are 180◦ domain walls, 90◦ domain walls having a structure like that of compound twins with a rational {100}c interface, 120◦ domain walls having a structure like that of type I twins with a rational {110}c interface, and 60◦ domain walls having a structure like that of type II twins with an irrational normal. The only possible domain walls in the 111c polarized rhombohedral phase are the 180◦ domain walls, and the 70◦ or 109◦ domain walls with a structure similar to that of compound twins. One can also use these ideas to study more-complex patterns involving multiple layers, layers within layers, and crossing layers. The potential energy (6.11) also allows one to study how applied boundary conditions affect the microstructure. The nonlocal electrostatic term is particularly interesting. For example, an isolated ferroelectric that Active Materials is homogeneously polarized generates an electrostatic field around it, and its energetic cost forces the ferroelectric to either become frustrated (form many domains at a small scale) or form closure domains or surface layers. In contrast, ferroelectrics shielded by electrodes can form large domains. Hard (high compliance, i. e., stiff) mechanical loading can force the formation of fine domain patterns [6.10], while soft (low compliance, dead loading being the most ideal example) loading leads to large domains. Therefore any strategy for actuation through domain switching must use electrodes to suitably shield the ferroelectric and soft loading in such a manner to create uniform electric and mechanical fields. 6.3 Ferroelectrics 165 by forming a (compatible) microstructure. However, when each pair of variants satisfy the compatibility conditions (6.13), the results of DeSimone and James [6.15] can be adopted to show that Z S equals the set of all possible averages of the spontaneous polarizations and strains of the variants n S λi ε(i) , Z = (ε, p) : ε∗ = i=1 p∗ = n λi (2 f i − 1) p(i) , λi ≥ 0 , i=1 n λi = 1, 0 ≤ f i ≤ 1 . (6.15) i=1 6.3.4 Ceramics Z P ⊇ Z T = ∩ Z S (x) = x∈Ω {(ε, p)|(R(x) ε RT (x), R(x) p) ∈ Z S (x), ∀x ∈ Ω} . (6.16) This simple bound is easy to calculate and also a surprisingly good indicator of the actual behavior of the material, which has the following implications. A material that is cubic above the Curie temperature and 001c -polarized tetragonal below has a very small set of spontaneous polarizations and no set of spontaneous strains unless the ceramic has a 001c texture. Indeed, each grain has only three possible spontaneous strains so that it is limited to only two possible deformation modes. Consequently the grains simply constrain Part A 6.3 A polycrystal is a collection of perfectly bonded single crystals with identical crystallography but different orientations [6.13]. The term ceramic in the case of ferroelectrics refers to a polycrystal with numerous small grains, each of which may have numerous domains. The functional (6.11) (with A = 0) describes all the details of the domain pattern in each grain, and thus is rather difficult to understand. Instead it is advantageous to replace the energy density W in the functional (6.1) with W̄, the effective energy density of the polycrystal. The energy density W describes the behavior at the smallest length scale, which has a multiwell structure as dis- cussed earlier. This leads to domains, and Ŵ x, ε, p is the energy density of the grain at x after it has formed a domain pattern with average strain η and average polarization p. Note that this energy is zero on a set Z S , which is larger than the set Z. Z S is the set of all possible average spontaneous or remnant strains and polarizations that a single crystal can have by forming domain patterns. However, Ŵ and Z S can vary from grain to grain. The collective behavior of the polycrystal is described by the energy density, W̄. W̄(ε, p) is the energy density of a polycrystal with grains and domain patterns when the average strain is ε∗ and the average polarization is p∗ . Notice that it is zero on the set Z P , which is the set of all possible average spontaneous or remnant strains and polarization of the polycrystal. The size of the set Z P is an estimate of the ease with which a ferroelectric polycrystal may be poled, and also the strains that one can expect through domain switching. A rigorous discussion and precise definitions are given by Li and Bhattacharya [6.14]. The set Z S is obtained as the average spontaneous polarizations and strains that a single crystal can obtain This is the case in materials with a cubic nonpolar high-temperature phase, and tetragonal, rhombohedral or orthorhombic ferroelectric low-temperature phases; explicit formulas are given in [6.14]. This is not the case in a cubic–monoclinic transformation, but one can estimate the set in that case. In a ceramic, the grain x has its own set Z S (x), which is obtained from the reference set by applying the rotation R(x) that describes the orientation of the grain relative to the reference single crystal. The set Z p of the polycrystal may be obtained as the macroscopic averages of the locally varying strain and polarization fields, which take their values in Z S (x) in each grain x. An explicit characterization remains an open problem (and sample dependent). However, one can obtain an insight into the size of the set by the so-called Taylor bound Z T , which assumes that the (mesoscale) strain and polarization are equal in each grain. Z T is simply the intersection of all possible sets Z S (x) corresponding to the different grains as x varies over the entire crystal. It is a conservative estimate of the actual set Z p : 166 Part A Solid Mechanics Topics each other. Similar results hold for a material which is cubic above the Curie temperature and 111c -polarized rhombohedral below it unless the ceramic has a 111c texture. These results imply that tetragonal and rhombohedral materials will not display large strain unless they are single crystals or are textured. Furthermore, it shows that it is difficult to pole these materials. This is the situation in BaTiO3 at room temperature, PbTiO3 , or PZT away from the morphotropic phase boundary (MPB). The situation is quite different if the material is either monoclinic or has a coexistence of 001c -polarized tetragonal and 111c -polarized rhombohedral states below the Curie temperature. In either of these situations, the material has a large set of spontaneous polarizations and at least some set of spontaneous polarizations irrespective of the texture. Thus these materials will always display significant strain and can easily be poled. This is exactly the situation in PZT at the MPB. In particular, this shows that PZT has large piezoelectricity at the MPB because it can easily be poled and because it can have significant extrinsic strains [6.14]. 6.4 Ferromagnets Part A 6.4 Magnetostrictive materials are ferromagnetics that are spontaneously magnetized and can be demagnetized by the application of external magnetic field and/or stress. Ferromagnets exhibit a spontaneous, reversible magnetization and an associated hysteresis behavior between magnetization and magnetic field. All magnetic materials exhibit magnetostriction to some extent and the spontaneous magnetization is a measure of the actuation strain (magnetostriction) that can be obtained. Application of external magnetic fields to materials such as iron, nickel, and cobalt results in a strain on the order of 10−5 –10−4 . Recent advances in materials development have resulted in large magnetostriction in ironand nickel-based alloys on the order of 10−3 –10−2 . The most notable examples of these materials include Tb0.3 Dy0.7 Fe2 (Terfenol-D) and Ni2 MnGa, a ferromagnetic shape-memory alloy [6.15,16]. A well-established approach that has been used to model magnetostrictive materials is the theory of micromagnetics due to Brown [6.17]. A recent approach known as constrained theory of magnetoelasticity proposed by DeSimone and James [6.15, 18] is presented here, which is more suited for applications related to experimental mechanics. 6.4.1 Theory The potential energy of a magnetostrictive solid can be written as [6.15, 18], Φ(ε, M, θ) = Φexch + Φmst + Φext + Φmel , (6.17) where Φexch is the exchange energy, Φmst is the magnetostatic or stray-field energy, Φext is the energy associated with the external magnetomechanical loads consisting of a uniform prestress σ0 applied at the boundary of S, and of a uniform applied magnetic field H0 in V . The expression (6.17) is similar to the ex- pression for the potential energy of a ferroelectric solid in (6.11). The arguments for the ferroelectric solid for neglecting the first two terms in the exchange energy and the stray-field energy are also applicable to the magnetostrictive solids under appropriate conditions, namely 1. that the specimen is much larger than the domain size so that the exchange energy associated with the domain walls can be neglected, and 2. that the sample is shielded so that energy associated with the stray fields is negligible. Such an approach enables one to explore the implications of the energy minimization of (6.17). However, shielding the sample is a challenge and needs careful attention. The energy associated with the external loading is written (6.18) Φext = − t0 · u dS − H0 · m dV . S2 V The magnetoelastic energy that accounts for the deviation of the magnetization from the favored crystallographic direction can be written (6.19) Φmel = W(ε, m) dV . V The magnetoelastic energy density W is a function of the elastic moduli, the magentostrictive constants, and the magnetic susceptibility, and is analogous to (6.12). For a given material, W can be minimized when evaluated on a pair consisting of a magnetization along an easy direction and of the corresponding stress-free strain. In view of the crystallographic symmetry, there will be several, symmetry-related energy-minimizing magnetization (m) and strain (ε) pairs, analogous to the Active Materials electrostrictive solids explored in Sect. 6.3.2. Assuming that the corresponding minimum value of Wis zero, one can define the set of energy wells of the material, K [(ε(i) , m(i) )], which is analogous to the energy Z = ∪i=1 wells for ferroelectric solids shown in Fig. 6.5; W increases steeply away from the energy wells. Necessary conditions for compatibility between adjacent domains in terms of jumps in strain and magnetization have been established and have a form similar to (6.13). Much of the discussion concerning domain patterns in ferroelectric solids presented in Sect. 6.3 is applicable to magentostrictive solids, with magnetization in place of electric polarization. 6.4.2 Magnetostriction The application of mechanical loading (stress) can demagnetize ferromagnets by reorienting the magnetization axis, which can be counteracted by an applied magnetic field. This competition between applied magnetic field and dead loading (constant stress) acting on the solid provides a competition, leading to nucleation and propagation of magnetic domains across a specimen that can give rise to large magnetic actuation. For Terfenol-D, the material with the largest known room-temperature magnetostriction, the energy wells comprising Z are eight symmetry-related variants. Experiments on Terfenol-D by Teter et al., illustrate the effect of crystal orientation and applied stress on magnetostriction and are reproduced in Fig. 6.6 [6.19]. Interesting features of the results References Magnetostriction (x 10 –3 ) 2.5 [111] 2 [112] 1.5 1 0.5 [110] 0 –2000 –1000 0 1000 2000 Field (Oe) Fig. 6.6 Magnetostriction versus applied magnetic field for three mutually orthogonal directions in single-crystal Terfenol-D at 20 ◦ C and applied constant stress of 11 MPa. (after 6.19 with permission. Copyright 1990, AIP) include the steep change in energy away from the minimum (th ereference state at zero strain) and the varying amounts of hysteresis for different orientations. The constrained theory of magnetoelasticity described above can reproduce qualitative features of the experiments based on energy-minimizing domain patterns. An important aspect of modeling magnetostriction hinges on the ability to measure the magnetoelastic energy density, W, and the associated constants. 6.2 6.3 6.4 6.5 6.6 P. Krulevitch, A.P. Lee, P.B. Ramsey, J.C. Trevino, J. Hamilton, M.A. Northrup: Thin film shape memory alloy microactuators, J. MEMS 5, 270–282 (1996) D. Damjanovic: Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics, Rep. Prog. Phys. 61, 1267–1324 (1998) L.L. Hench, J.K. West: Principles of Electronic Ceramics (Wiley, New York 1990) C.Z. Rosen, B.V. Hiremath, R.E. Newnham (Eds): Piezoelectricity. 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