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How to reduce the power dissipation? Ptotal T Cload V 2 DD fCLK VDD (I shortcircuit Ileakage I static) Voltage Scaling Switched Capacitance Switching Activity ENGG 6090 Topic Review 1 Low-Power Design Through Voltage Scaling Different from constant-field scaling (Full Scaling) – Full Scaling: power supply, as well as device dimension and doping density are scaled by the same factor. – Voltage Scaling: key device parameters and the load capacitances are constant. ENGG 6090 Topic Review 2 Low-Power Design Through Voltage Scaling Influence of Voltage Scaling on Power and Delay – Dynamic power dissipation is reduced significantly. Pavg T Cload V 2 DD fCLK – Propagation delay time increase if all the other parameters are kept constant. PHL PHL 2VT .n Cload 4(VDD VT .n ) ln( 1) k n (VDD VT .n ) VDD VT .n VDD 2V 4(VDD VT . p ) Cload T.p ln( 1) VDD k p (VDD VT . p ) VDD VT . p ENGG 6090 Topic Review 3 Low-Power Design Through Voltage Scaling Can we compensate for the delay caused by reducing the supply voltage? Solution: Scale down the threshold voltage of the transistors ( VT). Positive Influence: – when scaled linearly, allow the circuit to produce the same speed-performance at a lower Vdd. example Negative Influence: – noise margin and subthreshold conduction. I leakage I 0 e (Vg s Vth ) / nVT ENGG 6090 Topic Review 4 Low-Power Design Through Voltage Scaling How to overcome the difficulties (leakage and high stand-by power dissipation) associated with the low –VT circuits? Solution: – Variable-Threshold CMOS Technique (VTCMOS) – Multiple-Threshold CMOS Technique (MTCMOS) ENGG 6090 Topic Review 5 Low-Power Design Through Voltage Scaling Variable-Threshold CMOS Technique (VTCMOS) VT VT 0 ( 2F VSB 2F ) – Conventional CMOS logic circuit: substrate terminals are connected to Vdd or Vss. VT not influenced by the body effect. – VTCMOS logic circuit : VSB are variable and generated by a variable substrate bias control circuit. ENGG 6090 Topic Review 6 Low-Power Design Through Voltage Scaling Drawbacks of VTCMOS technique Requires twin-well or triple-well to apply different substrate bias voltage to different parts of the chip. Separated power pins may be required if the substrate bias voltage levels are not generated on-chip. ENGG 6090 Topic Review 7 Low-Power Design Through Voltage Scaling Multiple-Threshold CMOS Technique Using two different types of transistors with two different threshold voltages in the circuit. – Low-VT transistors: design the logic gates where speed is essential. – Stand-by transistors (Sleep transistors) : isolate the logic gate in stand-by mode to prevent leakage dissipation. ENGG 6090 Topic Review 8 Low-Power Design Through Voltage Scaling Drawbacks of MTCMOS circuit design technique Fabricate two different VT transistors on the same chip Sleep transistors increase the area and parasitic capacitance. MTCMOS is easier to implement and use compared to the VTCMOS. What can we do if both MTCMOS and VTCMOS are infeasible due to the technological limitations? Using system-level architectural methods (pipelining and Solution: hardware replication ) to maintain the system performance (throughout) despite the voltage scaling. ENGG 6090 Topic Review 9 Low-Power Design Through Voltage Scaling Pipelining Technique Single Stage Structure Register Register Logic Function F(input) Input Output tCLK tCLK CLK Input Output Input1 Input2 Input3 Input4 Input5 Input6 Input1 Input2 Input3 Input4 Input5 ENGG 6090 Topic Review 10 Low-Power Design Through Voltage Scaling N-Stage Pipeline Structure Register Stage1 Register Stage2 Stage N … Input tCLK Output Output tCLK tCLK … CLK Input Register Input1 Input2 Input3 … … ENGG 6090 Topic Review InputN Input1 InputN+1 InputN+2 Input2 Input3 11 Low-Power Design Through Voltage Scaling Theory: – Assuming all stages have approximately equal delays. – Maintaining the same function throughput as single stage. – Then, the logic blocks between two successive registers can operate N-times slower. – This means the power supply voltage can be reduced to a value of VDD.new to effectively to slow down the circuit . – Drawback of Pipeline Technique –N-1 register arrays are introduced, area increase. – Increases the latency from one to N clock cycles. ENGG 6090 Topic Review 12 Low-Power Design Through Voltage Scaling Parallel Processing Approach (Hardware Replication) Input Logic Function F(input_1) … CLK CLK_1 (fCLK/N ) Input Input Logic Function F(input_2) MUX Input1 Input2 Output CLK_2 (fCLK/N ) … CLK_2 … CLK_N Output InputN+1 … … … Input Logic Function F(input_N) InputN TCLK_i= N x TCLK CLK_1 SELECT fCLK … x x … x Input1 CLK_N (fCLK/N ) ENGG 6090 Topic Review 13 Low-Power Design Through Voltage Scaling Theory: – Gated clock signals(NTCLK) are used to load each register. – Each one of N inputs are loaded into a different register. – Time allowed to compute the function for each input vector is increased by a factor of N. – This means the power supply voltage can be reduced to a value of VDD.new to effectively slow down the circuit . – Drawback of Hardware Replication – input/output routing capacitance – increased area and latency ENGG 6090 Topic Review 14 Estimation and Optimization of Switching Activity The Concept of Switching Activity 2 Pavg T Cload VDD fCLK aT (switching activity factor): effective number of powerconsuming voltage transition experienced by the output capacitance per clock cycle. Depends on the circuit topology, logic style, and input signal statistics. How to investigate the output transition probabilities for different types of logic gates? Solution: Introduce two signal probabilities – P0: probability of having a logic “0” at the output. – P1:probability of having a logic “1” at the output. (P1=1-P0) ENGG 6090 Topic Review 15 Estimation and Optimization of Switching Activity Power-consuming transition probability is : P01= P0 . P1 Example: a static CMOS NOR2 – General case of a static CMOS logic gate with n input variables P01= P0.P1= (n0/2n).(2n-n0)/2n n0: number of zeros in the output column of the truth table. Example: transition probability is a function of the number of inputs. ENGG 6090 Topic Review 16 Estimation and Optimization of Switching Activity – In Multi-Level Logic Circuits – Distribution of input signal probabilities is not uniform. – Output transition probability becomes a function of the input probability distributions. – Evaluation of switching activity becomes a complicated problem in large circuits. – Designer rely on CAD tools for correct estimation . ENGG 6090 Topic Review 17 Estimation and Optimization of Switching Activity – Transition probability in dynamic CMOS logic circuit. – Power is consumed whenever the output value equals “0”. – Power consumption is determined by the signal-value probability and not by the transition probability – Signal-value probability is always larger than transition probability. – power consumption of dynamic CMOS logic gates is typically larger than static CMOS gates under the same conditions. Reduction of Switching Activity – Algorithmic Optimization Example: bubble sort Vs merge sort ENGG 6090 Topic Review 18 Estimation and Optimization of Switching Activity – Architecture Optimization An important measure is based on delay balancing and the reduction of the glitches. (What is glitch, where does it come from?) Example: F A B C D Chain Structure suffer glitching, more power dissipation. Tree Structure no glitch, less power dissipation, even smaller propagation delay. ENGG 6090 Topic Review 19 Estimation and Optimization of Switching Activity – Circuit-level Optimization An effective design technique is using gated clock signals. Recall: Power dissipation in the clock distribution network can be very significant. Example: Design an N-bit number comparator circuit using gated clock. The circuit compares the magnitudes of two unsigned N-bit binary number (A and B) and produces an output to indicate which one is larger. Conventional approach: All input bits are latched into two Nbit registers, and then applied to the comparator circuit. Two N-bit register arrays dissipate power in every clock cycle. ENGG 6090 Topic Review 20 Estimation and Optimization of Switching Activity Gated clock signals approach: How much the overall switching power dissipation of the system can be reduced if the incoming binary numbers are randomly distributed? Solution: ENGG 6090 Topic Review 50% 21 Welcome Shaw back! ENGG 6090 Topic Review 22 Low-Power Design Through Voltage Scaling Variation of the normalized propagation delay of a CMOS inverter, as a function of the power supply voltage Vdd and the threshold voltage VT. ENGG 6090 Topic Review 23 Low-Power Design Through Voltage Scaling VTp={ -0.2 V in active mode VBp={ -0.6 V in stand-by mode 2 V in active mode 4 V in stand-by mode 2V Vin VTn={ 0.2 V in active mode 0.6 V in stand-by mode Substrate Bias Control Circuit Vout VBn={ 0 V in active mode -2 V in stand-by mode ENGG 6090 Topic Review – Active mode: VBn=Vss, VBp=Vdd. Low power dissipation (low Vdd) and high switching speed (low VT). – Stand-by mode: lower VBn, higher VBp. VTn and | VTp| increase. I leakage I 0e (Vgs Vth ) / nVT 24 Low-Power Design Through Voltage Scaling VDD stand-by high- VT prevents subthreshold leakage in stand-by pMOS mode CMOS Logic with low VT stand-by high-speed operation with low power consumption high- VT prevents subthreshold nMOS leakage in stand-by mode – Active mode: sleep transistors on, low VT logic gates operate with low switching power dissipation and small propagation delay. – Stand-by mode: sleep transistors off, conduction paths for any subthreshold leakage that may originate from the internal low-VT circuitry are cut off. ENGG 6090 Topic Review 25 Estimation and Optimization of Switching Activity 3/4 * 1/4 = 3/16 1/4 * 1/4 = 1/16 3/4 * 3/4 = 9/16 0 1 3/4 * 1/4 = 3/16 If the two inputs are independent and uniformly distributed, then P0=3/4 P1=1/4 The probability that a power-consuming transition occurs at the output node is P01=P0.P1= 3/16 ENGG 6090 Topic Review 26 Output Transition Probability Estimation and Optimization of Switching Activity 0.30 NAND/NOR: only one “0” or “1” at truth table. 0.25 Transition probability for XOR/XNOR gate 0.20 0.15 0.10 Transition probability for NAND/NOR gate XOR/XNOR: 0.05 0.00 2 3 4 5 6 Number of Inputs 7 ENGG 6090 Topic Review 8 equal number of “0” and “1” at truth table. 27 Glitch – Primarily due to a mismatch or imbalance in the path lengths in the logic network . – Such a mismatch results in a mismatch of signal timing with respect to the primary inputs. – If all input signal of a gate change simultaneously, no glitch. – When glitch happens, a node exhibit multiple transitions in a single clock cycle before settling to the correct logic level. This contribute to the dynamic power dissipation. ENGG 6090 Topic Review 28