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Transcript
2.2
A Low -P ower Cur rent -S ensi ng Co m pl em en ta ry P ass-Tra nsis to r Logic
(LCSCPTL) for Low-Voltage High-speed Applications
Kuo-Hsing Cheng*, and Yii-Yih L i a d
Dept. of Electiical Engineering, Tam-Kang University, Taipei Hsien, Taiwan, R.O.C.
TEL: 886-2-6215656 Ext 731 FAX : 886-2-6221565
EMAK : [email protected]*
[email protected]#
VDD
Abstract
-
Recently, power dissipation is becoming an important constraint
in portable electronic systems. In this work, a new low-power
current-sensing complementary pass-transistor logic (LCSCPTL) is
proposed and analyzed. Since the current-sensing scheme can yield
a fast sensing speed under small voltage swing than the
voltage-sensing scheme. the new logic circuit can be used in the
low-voltage low-power digital system for high speed applications. I t
is shown that the LCSCPTL has an operation speed about 2.2 to 2.6
times higher than the CPL, which is known to have a great potential
in low-voltage low-power digital applications. Moreover, the
LCSCPTL has less power dissipation than the CPL. These feature
make the LCSCPTL very promising in the applications of
low-power low-voltage high-speed applications. The LCSCPTL can
be operated at 1.2V without changing conventional 5V C M O S
process.
OUIh
4
Current-saismg
huf€er of !he
CSCPI‘L
7
Introduction
Recently, low-voltage low-power integrated circuits are essential
portable electronic systems. Tlie portable systems especially
personal communication systems will require more and more
complicated signal processing. In fact, power dissipation is
becoming an important constraint in a design [ I ] [2]. Thus high
peiforinance low-voltage low-power complicated VLSI chips
should be developed to satisfy the desideratum.
One way to reduce the power dissipation is to reduce tlie power
supply voltage. It also slows down the circuit operation speed
sipificantly. Therefore. it is the challenge to retain high speed
peifonnance under low-voltage. particularly when the power supply
voltage approaches the threshold voltage.
The complementary pass-transistor logic (CPL) as shown in Fig.
1 is recognized to have tlie potential on low-voltage digital cii-cuit
tlesigi among pass-transistor logic family [3]. Tlie CSCPTL circuit
as shown in Fig. 2 is proposed for high-speed application [4]. It is
t w o times faster in gate delay as compared with the CPL. But the
CSCPTL consumes more dynamic power dissipation than the CPL.
Therefore, the power-delay product of the CSCPTL is similar to the
CPL.
In view of the advantages and disadvantages. a new low-power
current-sensing complementaiy pass-transistor logic (LCSCPTL) is
proposed and analyzed.
VDD
in
Circuit Techniques
The LCSCPTL has two mutually compatible versions which can
be used in the same chip to optimize the system. They are
16
0-7803-3339-X/96/$5.0001996 IEEE
described below:
Fig 3 shows the current-sensing buffer of the first version of the
LCSCPTL. In Fig. 3. the nodes IN and INb are output of the passtransistor logic tree. The nodes SI and S 2 are the cross storage
nodes. PMOS transistors M P l - M P 4 are the four single-transistor
transconductance amplifiers which conveit voltage to current. MN2
and MN3 are the current-sensing devices. MN 1 and MN4 are used
to mirror and amplify the sensed ciu-rent fiom the PMOS
transconductance amplifiers. MNS and MN6 are used to cut off the
dc current path after evaluation. The MOS transistors MN7 and
MN8 are used as the gate-to-source/drain capacitances. Because the
NMOS transistors MN2 and MN3 result in the negative feedback
effect, the switching speed will degrade. By adding the capacitors
MN7 and MN8, shunted with MN2 and MN3, the negative feedback effect can be reduced during switching, and the switching
1996 Symposium on VLSl Circuits Digest of Technical Papers
Authorized licensed use limited to: Tamkang University. Downloaded on March 23,2010 at 22:57:49 EDT from IEEE Xplore. Restrictions apply.
Fig 5 The layout of the testing Circuit
NAND Gates Speed ComparSim NN\TD Gates Power dissipatim
ourO-
10
V
1,
0 L -
1
From I'ass-'l'rsoisistor I ~ ~ g l'ree
ic
Fig 4 ?be s e c a i d versim of the I.CSCl'l'1,
speed is improved. It makes the dynamnc: power dissipation of the
LCSCPTL circuit is decreased.
B. 7he Second Version ofthe ISSC'YTI,
Fig. 4 shows the second version of the LCSCPTL. The gates of
the NMOS transistors MN2 and MN3 are connected to the output
nodes O W b and OUT. respectively. Tlius the uodes SI and S2
have less capacitive load and the switching speed of the nodes SI
and S2 are improved. But careful design I S needed when the output
nodes have different capacitive load.
Perforniance Conip:irisons
Fig. 5 shows the layout of the CPL, CSCPTL, and LCSCF'TL.
Based upon SV 0.8 itin CMOS technology and 1.2 power supply
voltage. The speed comparsions on iriulti.-input NAND gates of the
CPL. the CSCPTL, the first version LCSCPTL, and the second
version LCSCPTL are showri in Fig. 6(a) They are based upon the
HSPICE simulation results where the thi-eshold voltage of NMOS
and PMOS transistors are 0.75V and -0.9V. respectively. Fig. 6 (b)
shows the power dissipation coinpat siori c The power dissipation
simulation results are simulated under 20Mllz operating frequency.
From the simulated results, it is seen that the operation speed of the
LCSCPTL is about 2.2 to 2.6 times higher than the CPL.
Moreover, the LCSCPrL has less power dissipation and the more
the logic complexity is, the inore the circuit perforinance benefit of
the LCSCPTL is.
2
'
'
'
3
4
5
Fm-in
In)
Fig 6 (a) T h e gate delay cvmpamms
of the NAND gates
13)The power m a t m compmces
of the NAND gates
\
,
-v
1
Conclusion
In this paper, a low-power current-sensing complementaiy
pass-transistor logic (LCSCPTL) is proposed and analyzed. The
LCSCPTL has two circuit version. It is shown that the LCSCPTL
have certain advantages in both speed and power dissipation over
the CPL circuit. Thus the LCSCPTL circuits are quite promising
for low-voltage high speed VLSI applications.
References
[ 1 ] Anantha C%atidrakasati, Andy I3ursteiii arid Kol)nt. W J h d a s t n i . "A
I .ow-I'own- Cliipsd for I'mtable Multimalia Applicatiuis," 111 J'rocrediiigv
tanaticnial Solid-State Cumit Cniftrui- ce, pp. 82-83. a d
121 Ahdellatif Uellaoum aid Mdianied I. Elmasry, "120w-PowerJligital V I S I
Ilnign: Circuit md Sydeuis," Klcluwer Acadnnic puhlidiers. Nmwell. MA.
1995.
131 K n n i o Y m o , Toshiaki Ymimaka. T a k d i i Nidiida, Maapodii %it(>.
Katsilliiro ShimtJiigashi, a i d Akiliiro Sliiiiiim, "A 3.Xns CMOS
Multiplier Uskig Comnpletnentq I'ass-'I'raisidor
I~)gic." 11
Solid-state Circuits, vol. 25,pp. 388-395, Apr. 1990.
(41 Chluig-Yu \Vu. Jr-Houng I,u, and Kuo-Ifsing Clieng, "A New CMOS
Lhn-ent-Sensixig Cnuq~lanentary Pass-Trausisltn Logic (
High-Speed Low-Voltage Applicaticw," I'roc. of 1995 11
Swttle.U.S.A., May 1995 pp. 25-28
1996 Symposium on VLSI Circuits Digest of Technical Papers
17
Authorized licensed use limited to: Tamkang University. Downloaded on March 23,2010 at 22:57:49 EDT from IEEE Xplore. Restrictions apply.