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Simplifying System Design with MRAM
The Fastest, Non-Volatile Memory
MEMCON 2012
MRAM – Simplifying system design
D  MRAM - Magnetic Random Access Memory
D 
Fastest non-volatile memory with unlimited endurance
D  Addressing a fundamental Problem of Storage:
Truly Non-Volatile RAM – Power Fail Data Protection
D  Eliminates complicated power fail management HW & FW
D  Reduces development time and effort for products
D 
D  Complementing DRAM and NAND
Making NAND perform better and last longer
D  MRAM for write caching, DRAM for read caching
D  More IOPS and better IOPS/Watt than NAND
D 
Flash Memory Summit 2012
Santa Clara, CA
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What is MRAM Technology?
MTJ
D  Simple 1 transistor + 1 MTJ memory cell
D  Magnetic polarization stores data
D  Resistance levels represent bit values
compared to electron charge levels
D  Highly reliable non-volatile memory
Transistor
D  Unlimited endurance & retention
D  Low latency enabling instant on/off
Cross-sectional view
magnetic layer 1
free layer
tunnel barrier
magnetic layer 2
fixed layer
Circuit
low resistance
3
high resistance
Spin-Torque MRAM – Next generation MRAM
Current MRAM uses a magnetic field for switching
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Next generation MRAM enables scaling to Gb densities
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Toggle Write
Spin-Torque Write
4
MRAM: Best in Class Storage & Working Memory
Primary
Working
Memory
Ultra-Low
Read & Write
Latency
<50ns
Unlimited
Cycling
Endurance
>10e15
Persistent
Random Access
Memory
Ultra-High
Intrinsic
Reliability
Storage
System
Memory
Extreme
Environment
Memory
>20yrs@125oC
Robust
Power
Fail Safe
No Caps/Batteries
Wide
Operating
Temperature
-40oC – 125oC
Unlimited
Data
Retention
>20yrs@125oC
Instant
Power-On/Off
Safe Shutdown
On <50us/Off <50
Ultra-Low
radiation
induced SER
<0.1FIT/Mb
Easy BEOL integration with CMOS
Ideal choice for eBuffer/eCache
Explosion of content & network users
MORE DATA + MORE USERS + INSTANT ACCESS
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Faster & consistent data storage access is
needed to deliver acceptable performance
6
Huge Processor-Storage Performance Gap
latency
(ns)
Processor spends time waiting for data from storage
More IOPS is important but latency matters as well!
Shorter storage latency improves system performance
CPU
RAM
MRAM
NAND
DISK
TAPE
10-1
100
101
104
106
109
~100
operations/s
~1,000,000,000
operations/s
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The Quest for Faster Data Access
“Every 100 ms in latency can cause a 1% drop in sales”
Amazon.com
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9*(3()3,7,8-684(5*,8,97659,:04,9
1000x higher IOPS(*)
NAND SSD
1000x lower Latency
MRAM SSD
MRAM delivers the only nanosecond-class,
gigabyte-per-second nonvolatile storage tier
(*) 2kB Transfer Size
8
ST-MRAM delivers 10x better Price/Performance
Cloud Storage Needs:
D 
D 
D 
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,::,88,97659,:04,9-8649:68(.,
8,+0*:()3,)(3(5*,+7,8-684(5*,
Nanosecond-class MRAM Storage
500x Performance…
Key Metrics
NAND
MRAM
Density
64Gb
1Gb
Latency
50us
45ns
4kB Write IOPS
800
400k
1
50
Cost/GB
NAND SSD
…at only 50x Cost/GB
9
MRAM SSD
ST-MRAM delivers 100x Power/Performance
Data Center needs:
D 
D 
D 
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High Performance, Power-Efficient MRAM Storage
500x Performance…
Key Metrics
NAND
MRAM
Density
64Gb
1Gb
Power
80mW
400mW
800
400k
1
50
4kB Write IOPS
Cost/GB
NAND SSD
…at only 5x Power
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MRAM SSD
Everspin – The MRAM Company
D  MRAM - Magnetic Random Access Memory
D 
Fastest non-volatile memory with unlimited endurance
D  Only company to have commercialized MRAM
D  Established 2008, 100%+ annual revenue growth
D  Fundamental & essential MRAM IP
D 
600+ Patents & Applications WW, 220+ US Patents granted
D  Backed by top-tier VCs
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MRAM Adoption Accelerating
9
6.0M+
400+
250+
!
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!
;9:64,89
!
,90.5&059(1)
100+
100+
!
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!
86+;*:9
Everspin Toggle MRAM
Cumulative Shipments (Mu)
* Projections
8
9M
7
6M
6
5
4
3
2
1
0
3Q08
4Q08
1Q09
2Q09
3Q09
4Q09
1Q10
2Q10
3Q10
4Q10
1Q11
2Q11
3Q11
Q411
1Q12
2Q12 3Q12* 4Q12*
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12
MRAM is Everywhere
Storage & Networking
Energy & Infrastructure
Automotive & Transportation
13
Targeting $25B MRAM Market in 2016
Storage
of
Metadata
Nonvolatile
Buffer
for Storage
Nonvolatile
Cache
for Storage
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CY12 TAM: $0.5B
CY14 TAM: $5B
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CY16 TAM: $25B
Speedier more reliable Enterprise Storage
D  Enterprise Storage: Can’t lose data if power fails !
D  Historically using batteries/caps to protect data in RAM
Areas of concern
DRAM with battery/caps
Spin-Torque MRAM
Write performance
Temporary persistent cache
Truly persistent write cache
Power fail circuitry
Simplified system
Lifetime reliability issues
Truly persistent RAM
Form factor
Large battery/caps
No battery/caps
Temperature
Commercial
Automotive
Battery/caps concerns
Truly green storage
Complexity
Reliability
Environmental
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Storage Solutions craving ST-MRAM
MRAM complements solid state & magnetic storage
Improved response time due to low latency & high bandwidth
MRAM as Buffer Memory
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Better performance & reliability
MRAM as I/O & Network Cache
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Better reliability & overall TCO
MRAM as Fast Storage-Tier
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Better IOPS/$/W & reliability
16
MRAM in SSD, HDD and Hybrid
D  Enterprise/Industrial SSD Ø  %;--,8 86.8(4(:(;--,8
Ø  %(*/,
&80:,(*/,
Ø  6=,8(03"(-,&80:,;--,8(*/05.
D  Hybrid HDD Ø  %;--,8 86.8(4(:(;--,8
Ø  %(*/,,+0((5(.,4,5:
Ø  6=,8(03"(-,0./ ,8-684(5*,?)80+
D  Enterprise HDD
Ø  %;--,8
,+0(&80:,(*/05.
Ø  %(*/,&80:,(*/,
Ø  6=,8(03"(-,&80:,(*/05.
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17
Case Study: RAID – Dell & LSI
Write Journal Memory
for
RAID Storage Systems
Ø 
Rapid power loss data recovery
Ø 
Superior data integrity
Ø 
Fast transaction data log
Ø 
No separate board level discrete
devices, batteries or capacitors
External Memory
Interface
Embedded SRAM
Memory
System Interface
I/O Processor
External DRAM
Memory Control
DRAM Cache
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PCI-e Root
Complex
Storing Metadata Transactions
Write Journal
MRAM
PCI-e Interface
Ø 
Program Memory
FLASH
SAS Link Cores
q 
Case Study: SSD – Buffalo Memory
D  Buffalo Memory announced a new Industrial SSD that
uses Everspin MRAM for the cache.
Ø  Exhibited
at the15th Embedded Systems Expo in Japan
Ø  4GByte SSD with 8MByte of MRAM cache
D  “MRAMs are nonvolatile memories that use magnetic materials as elements
and feature high-speed random access, high integration and non-volatility.
There are three advantages in using MRAM as cache, compared with normal
high-speed SSDs that use volatile DRAM as cache.”
D  MRAM unique value proposition:
1. 
2. 
3. 
Excellent resistance to power interruption Improve booting speed
Excellent power-saving capability
Motoyuki Oishi, Nikkei Electronics
19
Case Study All Flash Appliance - Skyera
D  &#3,.)"8/9./0))/,)'"/00#/0,.%#--)'+!#
Ø  MRAM
replaces capacitor-backed RAM solution
Ø  .,0#!0'+%"0'+:'%&00&.,1%&/0,.%#'+
D  Overwhelming customer interest for this product
Ø  Initial
use of Toggle MRAM in lieu of Capacitor Backed SRAM
Ø  Transitioning to ST-MRAM in lieu of Capacitor Backed DRAM
Ø  MRAM density deployed growing from MB to GB 20
The Quest for Storage Class eMemory
Converged
Systems
eMemory Concerns:
-  Logic Compatibility
-  Scalability to <2xnm
-  Static Power scaling
MRAM is logic
friendly, scales,
instantly on/off
Processor and Memory
merge into one block
Converged
Memories
eMemory Concerns:
- 
- 
- 
Working Memory
Storage Memory
Tuning for apps
MRAM serves
all eMemory
requirements
On-Chip Code and Data
Storage merge into one
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Do More
With Less
eMemory Concerns:
- 
- 
- 
Performance of NVM
Endurance of NVM
Size of on-chip RAM
MRAM is fastest
highest density
enduring NVM
Deliver better products
faster at lower total cost
Everspin - Extraordinary Growth Potential
D  Everspin MRAM -Simplifying System Design
Ø  Truly
Non-Volatile RAM – Power Fail Data Protection
Ø  Eliminates complicated power fail management HW & FW
Ø  Reduces development time and effort for products
Ø  Complementing DRAM and NAND in Storage
Ø  Compatibility with CMOS Logic, optimal eMemory solution
D  Everspin is the leader in MRAM technology
Ø  Proven
track record - manufacturing MRAM since 2006
Ø  Top tier customers – Dell, LSI, Skyera, Siemens, BMW, etc.
Ø  Deployment in many applications with exemplary quality
Ø  On track to deliver the industry’s first ST-MRAM product
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