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Transcript
ELEC 120
Foundations of Electrical Engineering
Spring 2007
Review Topics for Final Exam
The following is a list of topics that could appear in one form or another on the exam. Not all of
these topics will be covered, and it is possible that an exam problem could cover a detail not
specifically listed here. However, this list has been made as comprehensive as possible. You
should be familiar with the topics on the previous review sheets in addition to those listed below.
Equivalent inductance formulas
- series: Leq  L1  L2    L N
-
parallel: Leq 
1
1
1
1


L1 L2
LN
Energy storage in inductors
1
- W t   Li 2 t  ; stored energy is always positive, but it can increase or decrease
2
- energy increasing → inductor absorbs energy (pos. power)
- energy decreasing → inductor supplies energy to rest of circuit (neg. power)
Equivalent capacitance formulas
1
- series: Ceq 
1
1
1


C1 C 2
CN
- parallel: C eq  C1  C 2    C N
Energy storage in electric field
1
- W t   Cv 2 t  ; stored energy is always positive, but it can increase or decrease
2
- energy increasing → capacitor absorbs energy (pos. power)
- energy decreasing → capacitor supplies energy to rest of circuit (neg. power)
Basic RC circuits
- “first-order circuit” refers to the first-order differential equation that describes
behavior of voltage and/or current in circuit
- voltage across discharging capacitor (if discharge begins at t = 0):
o vC t   vC 0e t RC , t > 0
o vC(0) = initial voltage at t = 0
o R = equivalent resistance connected to C during discharge period
o time constant:  = RC; time required for voltage to drop to e1 times initial
value
- voltage across charging capacitor (if charge begins at t = 0):
o vC t   vth 1  e t RC  , t > 0
o vth = Thévenin equivalent voltage of circuit connected to C during charge
o R = Thévenin equivalent resistance of circuit connected to C during charge
o time constant:  = RC; time required for voltage to rise to (1  e1) times final
value (vth), if vC(0) = 0.
1
Basic RL circuits
- “first-order circuit” refers to the first-order differential equation that describes
behavior of voltage and/or current in circuit
- current through “discharging” inductor (if discharge begins at t = 0):
o i L t   i L 0e tR L , t > 0
o iL(0) = initial current at t = 0
o R = equivalent resistance connected to L during “discharge” period
o time constant:  = L/R; time required for current to drop to e1 times initial
value
- current through “charging” inductor (if charge begins at t = 0):
o i L t   i N 1  e tR L  , t > 0
o iN = Norton equivalent current of circuit connected to L during “charge”
o R = Norton equivalent resistance of circuit connected to L during “charge”
o time constant:  = L/R; time required for current to rise to (1  e1) times final
value (iN), if iL(0) = 0.
Number systems and conversions between them
- binary (base 2): digits are 0, 1
- decimal (base 10): digits are 0, 1, 2, …, 9
- octal (base 8): digits are 0, 1, 2, 3, 4, 5, 6, 7
- hexadecimal (base 16): digits are 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, A, B, C, D, E, F
Binary arithmetic
- addition
- subtraction using 2’s complements: n – m
o add 2’s complement of m to n
o advantage is that addition is much easier than subtraction using logic circuits
- procedure for finding 2’s complement in binary
o find 1’s complement (complement every digit in number; 0 → 1 and 1 → 0)
o add 1 to 1’s complement
o for fractional values (numbers with digits to right of decimal), add fractional
number with a 1 only in least significant decimal place (e.g., add 0.001 to
10011.011)
Binary coded decimal (BCD) encoding
Boolean algebra
- NOT, AND, OR, and XOR operations and truth tables
- symbology:
o NOT (complement or inversion) indicated by bar over variable; ex. a
o AND analogous to multiplication (product); ex. ab or a∙b
o OR analogous to addition (sum); ex. a + b
o XOR has no analog in numerical algebra; ex. a  b  a b  ab
- identities and relationships:
o Double negation: a  a
o Commutative laws: ab  ba and a  b  b  a
o Associative law: abc  abc and a  b  c  a  b  c
o Distributive laws: ab  c  ab  ac and a  bc  a  ba  c
o
o
o
o
DeMorgan’s laws: a b  a  b and a  b  ab
Absorption laws: a  ab  a , aa  b  a , a  a b  a  b , and aa  b  ab
AND identities: a 1  a , aa  a , a  0  0 and a  a  0
OR identities: a  1  1 , a  a  a , a  0  a and a  a  1
2
-
-
NAND gate: ab
NOR gate: a  b
3-input gates (and gates with larger numbers of inputs)
standard forms of Boolean functions
o sum-of-products (SOP) form, and sum-of-minterms
o product-of-sums (POS) form, and product of maxterms
o NAND gate realization of SOP form
o construction of NOT, AND, and OR gates using only NAND gates
o NOR gate realization of POS form
o construction of NOT, AND, and OR gates using only NOR gates
o advantage of NAND and NOR gates is that they are universal gates, and in
CMOS they use fewer transistors than AND and OR gates
o conversion from SOP form to POS form, and vice versa
simplification of Boolean functions using Karnaugh maps
o order of column and row headers (e.g., for two digits, use 00, 01, 11, 10 so
that only one variable changes value per row/column)
o obtain SOP form by grouping 1’s into rectangles with power-of-2 sizes
o obtain POS form by grouping 0’s into rectangles with power-of-2 sizes
o when and when not to complement an input signal in SOP and POS forms
Relevant course material:
HW:
Labs:
Textbook:
#9
#9-#11
Sections 3.1 through 3.4, although not all topics in Secs. 3.2 and 3.4 were covered
All of Chap. 11, except for the subsection on “Switching Circuits”
Supplement: “Review of Boolean Algebra and Logic Gates” (PowerPoint file)
3