Nonisolated High Step-Up Stacked Converter Based on Boost
... remains [16]. Active clamping approaches also resolve these problems and reduce switching losses, but leads to a complex structure with increased number of switches [17], [18]. In this paper, to obtain a high step-up capability with high efficiency, an alternative structure based on isolated-type co ...
... remains [16]. Active clamping approaches also resolve these problems and reduce switching losses, but leads to a complex structure with increased number of switches [17], [18]. In this paper, to obtain a high step-up capability with high efficiency, an alternative structure based on isolated-type co ...
Chapter 2 Thyristor
... Figure 5 gives a graphical explanation of the triggering the PNP transistor formed by the n-layer and the two pprocess. The turn-on of the device is three-fold and layers next to it. The lower p-layer works as the collector starts when the current from MT1 flows into the gate of this PNP transistor a ...
... Figure 5 gives a graphical explanation of the triggering the PNP transistor formed by the n-layer and the two pprocess. The turn-on of the device is three-fold and layers next to it. The lower p-layer works as the collector starts when the current from MT1 flows into the gate of this PNP transistor a ...
BD00C0AWFPS-M
... (e.g. short circuit, open circuit, etc). Therefore, if any special mode is being considered with values expected to exceed the absolute maximum ratings, implementing physical safety measures, such as adding fuses, should be considered. 2. The electrical characteristics given in this specification ma ...
... (e.g. short circuit, open circuit, etc). Therefore, if any special mode is being considered with values expected to exceed the absolute maximum ratings, implementing physical safety measures, such as adding fuses, should be considered. 2. The electrical characteristics given in this specification ma ...
DS32738741
... Band to Band tunnelling current [1] flows through the drain-to-substrate junctions due to the twisting of Band gaps. With higher supply voltage, thinner oxide thickness, lightly doped drain, reverse body bias (RBB) technique[3], and high mobility channel materials having smaller band gaps. ...
... Band to Band tunnelling current [1] flows through the drain-to-substrate junctions due to the twisting of Band gaps. With higher supply voltage, thinner oxide thickness, lightly doped drain, reverse body bias (RBB) technique[3], and high mobility channel materials having smaller band gaps. ...
MAX1583 White LED Camera-Flash Boost Converter General Description
... five white LEDs with a constant current to provide camera flash/strobe in cell phones, PDAs, DSCs, and other hand-held devices. The MAX1583 includes a 24V boost converter and a high-voltage LDO current regulator for high efficiency and long battery life. Two logic inputs control four modes of operat ...
... five white LEDs with a constant current to provide camera flash/strobe in cell phones, PDAs, DSCs, and other hand-held devices. The MAX1583 includes a 24V boost converter and a high-voltage LDO current regulator for high efficiency and long battery life. Two logic inputs control four modes of operat ...
design a three phase controlled rectifier for use in the laboratory
... Figure 17: (a) fully-controlled three phase bridge ciruit, (b) the output voltage waveforms with small fring angle and (c) with large firing angle ............................................................................................. 18 Figure 18: Commutation of thyristor from one phase to an ...
... Figure 17: (a) fully-controlled three phase bridge ciruit, (b) the output voltage waveforms with small fring angle and (c) with large firing angle ............................................................................................. 18 Figure 18: Commutation of thyristor from one phase to an ...
BM6203FS
... IBBQ is the floating driver power supply quiescence current, 150µA(Max) ILBD is the bootstrap diode reverse bias current, 10µA(Max) FPWM is the carrier frequency, 20kHz Qg is the output MOSFET total gate charge, 50nC(Max) QLOSS is the floating driver transmission loss, 1nC(Max) ∆VDROP is the drop vo ...
... IBBQ is the floating driver power supply quiescence current, 150µA(Max) ILBD is the bootstrap diode reverse bias current, 10µA(Max) FPWM is the carrier frequency, 20kHz Qg is the output MOSFET total gate charge, 50nC(Max) QLOSS is the floating driver transmission loss, 1nC(Max) ∆VDROP is the drop vo ...
ZR285 Description Pin Assignment Typical Application Circuit
... The ZR285 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in a small outline surface mount package, ideal for applications where space saving is important. The ZR285 design provides a stable voltage without an external capacitor ...
... The ZR285 uses a bandgap circuit design to achieve a precision micropower voltage reference of 2.5 volts. The device is available in a small outline surface mount package, ideal for applications where space saving is important. The ZR285 design provides a stable voltage without an external capacitor ...
Application Note No. 101
... Figure 3 depicts parallel columns or "stacks" of LEDs, where a series resistor is used in each stack to provide some degree of current control, stabilization, and consistency in current from stack-to-stack, given the potential variations in diode forward voltages VF from one stack to the next. One w ...
... Figure 3 depicts parallel columns or "stacks" of LEDs, where a series resistor is used in each stack to provide some degree of current control, stabilization, and consistency in current from stack-to-stack, given the potential variations in diode forward voltages VF from one stack to the next. One w ...
UMC4N Features Mechanical Data
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
AP7335A 300mA, LOW QUIESCENT CURRENT, FAST TRANSIENT LOW DROPOUT LINEAR REGULATOR
... EN pin should be tied to IN pin to keep the regulator output on at all time. To ensure proper operation, the signal source used to drive the EN pin must be able to swing above and below the specified turn-on/off voltage thresholds listed in the Electrical Characteristics section under VIL and VIH. ...
... EN pin should be tied to IN pin to keep the regulator output on at all time. To ensure proper operation, the signal source used to drive the EN pin must be able to swing above and below the specified turn-on/off voltage thresholds listed in the Electrical Characteristics section under VIL and VIH. ...
AP3154A - Diodes Incorporated
... Through SDI, the current into each channel can be configured in accordance to specific protocol and pre-defined values. Maximum output current can be set to one of the four possible scales: 2mA, 14mA, 20mA, 30mA. Among these, the ‘2mA’ setting is called “low current mode”. This would be useful for a ...
... Through SDI, the current into each channel can be configured in accordance to specific protocol and pre-defined values. Maximum output current can be set to one of the four possible scales: 2mA, 14mA, 20mA, 30mA. Among these, the ‘2mA’ setting is called “low current mode”. This would be useful for a ...
Experimental Investigation of Transient Voltage and Current
... are informed, and about 70% (220 cases) is estimated due to lightning. Among the 220 cases, 104 cases are of the voltage class 66-77kV, 45 cases/110-154kV, 14 cases above 154kV, and 57 cases the voltage class unknown. The incoming path of a lightning surge causing the disturbances has been investiga ...
... are informed, and about 70% (220 cases) is estimated due to lightning. Among the 220 cases, 104 cases are of the voltage class 66-77kV, 45 cases/110-154kV, 14 cases above 154kV, and 57 cases the voltage class unknown. The incoming path of a lightning surge causing the disturbances has been investiga ...
AS339/339A Description Features
... functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. 2. This input current will only exist when the voltage at any ...
... functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. 2. This input current will only exist when the voltage at any ...
Insulated Gate Bipolar Transistor
... become forward biased and therefore the parasitic npn transistor is not active and can be deleted from the equivalent IGBT circuit. The analysis of the forward conduction characteristics of an IGBT is possible by the use of two equivalent circuit approaches. The model based on a PiN rectifier in seri ...
... become forward biased and therefore the parasitic npn transistor is not active and can be deleted from the equivalent IGBT circuit. The analysis of the forward conduction characteristics of an IGBT is possible by the use of two equivalent circuit approaches. The model based on a PiN rectifier in seri ...
LM82 Remote Diode and Local Digital Temperature Sensor with Two-Wire... LM82 FEATURES DESCRIPTION
... When the input voltage (VI) at any pin exceeds the power supplies (VI < GND or VI > VCC), the current at that pin should be limited to 5 mA. The 20 mA maximum package input current rating limits the number of pins that can safely exceed the power supplies with an input current of 5 mA to four. Paras ...
... When the input voltage (VI) at any pin exceeds the power supplies (VI < GND or VI > VCC), the current at that pin should be limited to 5 mA. The 20 mA maximum package input current rating limits the number of pins that can safely exceed the power supplies with an input current of 5 mA to four. Paras ...
MAX1636 Low-Voltage, Precision Step-Down Controller for Portable CPU Power General Description
... rectification and Maxim’s proprietary Idle Mode™ control scheme. Efficiency is greater than 80% over a 1000:1 load-current range, extending battery life in system-suspend or standby modes. Excellent dynamic response corrects output load transients caused by the latest dynamic-clock CPUs within five ...
... rectification and Maxim’s proprietary Idle Mode™ control scheme. Efficiency is greater than 80% over a 1000:1 load-current range, extending battery life in system-suspend or standby modes. Excellent dynamic response corrects output load transients caused by the latest dynamic-clock CPUs within five ...
High-Voltage Energy Storage: The Key to Efficient Holdup
... buck topology while the required current capability is higher with a boost topology. An inductor designed for both modes would therefore be larger than one optimized for either mode by itself. Similar considerations apply to the MOSFETs, for example QD, for which the voltage rating is dictated by th ...
... buck topology while the required current capability is higher with a boost topology. An inductor designed for both modes would therefore be larger than one optimized for either mode by itself. Similar considerations apply to the MOSFETs, for example QD, for which the voltage rating is dictated by th ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.