LM82 Remote Diode and Local Digital Temperature Sensor with Two-Wire... LM82 FEATURES DESCRIPTION
... When the input voltage (VI) at any pin exceeds the power supplies (VI < GND or VI > VCC), the current at that pin should be limited to 5 mA. The 20 mA maximum package input current rating limits the number of pins that can safely exceed the power supplies with an input current of 5 mA to four. Paras ...
... When the input voltage (VI) at any pin exceeds the power supplies (VI < GND or VI > VCC), the current at that pin should be limited to 5 mA. The 20 mA maximum package input current rating limits the number of pins that can safely exceed the power supplies with an input current of 5 mA to four. Paras ...
AP3156
... For the SDI command to be successfully received by the AP3156, all SDI timing specifications must be satisfied. When no command is being sent, the SDI pin should be held High. If the SDI pin goes Low and stays Low for a time length between TSLO(min) and TSLO(max) and then goes High and stays High fo ...
... For the SDI command to be successfully received by the AP3156, all SDI timing specifications must be satisfied. When no command is being sent, the SDI pin should be held High. If the SDI pin goes Low and stays Low for a time length between TSLO(min) and TSLO(max) and then goes High and stays High fo ...
FMMT6520 Features and Benefits Mechanical Data
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
FJP5555 NPN Silicon Transistor FJP5555 — NPN Silicon T
... life, and (c) whose failure to perform when properly used in safety or effectiveness. accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counter ...
... life, and (c) whose failure to perform when properly used in safety or effectiveness. accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counter ...
Breakdown of Gasses - Department of Electrical Engineering
... The (mean) number of ionising collisions by one electron per unit drift across the gap is not a constant but subject to statistical fluctuations. The newly liberated electron and the impinging electron are then accelerated in the field and an electron avalanche is set up. Further increase in voltage ...
... The (mean) number of ionising collisions by one electron per unit drift across the gap is not a constant but subject to statistical fluctuations. The newly liberated electron and the impinging electron are then accelerated in the field and an electron avalanche is set up. Further increase in voltage ...
AP1184 General Description Features
... without the disadvantage of the extra power dissipation due to the base current associated with PNP regulators. This is done by bringing out the control pin of the regulator that provides the base current to the power NPN and connecting it to a voltage that is greater than the voltage present at the ...
... without the disadvantage of the extra power dissipation due to the base current associated with PNP regulators. This is done by bringing out the control pin of the regulator that provides the base current to the power NPN and connecting it to a voltage that is greater than the voltage present at the ...
TPS65150-Q1 Low Input Voltage, Compact LCD Bias IC With VCOM
... Overvoltage protection threshold (SUP) V(SUP) rising ...
... Overvoltage protection threshold (SUP) V(SUP) rising ...
Product Lines
... Beginner's Configuration: The standard switch is equipped with various options to simplify first time experiments for users which are inexperienced with high voltage and high frequency circuit design. The beginner's configuration includes option FH and PT-HV for easy wiring and attachment without pr ...
... Beginner's Configuration: The standard switch is equipped with various options to simplify first time experiments for users which are inexperienced with high voltage and high frequency circuit design. The beginner's configuration includes option FH and PT-HV for easy wiring and attachment without pr ...
ZXTP4003G - Diodes Incorporated
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
RT6254A, RT6254B - Richtek Technology
... of capacitors change as temperature, bias voltage, and operating frequency change. For example the capacitance value of a capacitor decreases as the dc bias across the capacitor increases. Several ceramic capacitors may be paralleled to meet the RMS current, size, and height requirements of the appl ...
... of capacitors change as temperature, bias voltage, and operating frequency change. For example the capacitance value of a capacitor decreases as the dc bias across the capacitor increases. Several ceramic capacitors may be paralleled to meet the RMS current, size, and height requirements of the appl ...
MB39C602 - Fujitsu
... The DRN pin is connected with the VDD pin through the internal VDD Switch, and VDD capacitor (CVDD) is charged from the DRN pin. When the voltage at the VDD pin reaches the threshold voltage of UVLO, the VDD Switch is turned off, and the internal Bias circuit operates, and the switching is started. ...
... The DRN pin is connected with the VDD pin through the internal VDD Switch, and VDD capacitor (CVDD) is charged from the DRN pin. When the voltage at the VDD pin reaches the threshold voltage of UVLO, the VDD Switch is turned off, and the internal Bias circuit operates, and the switching is started. ...
Slide 1
... Forward Biasing The external Voltage lowers the potential barrier at the junction, allowing the electrons to flow. Reverse Biasing The external voltage raises the potential barrier at the junction, preventing electrons ...
... Forward Biasing The external Voltage lowers the potential barrier at the junction, allowing the electrons to flow. Reverse Biasing The external voltage raises the potential barrier at the junction, preventing electrons ...
LM2576 3.0 A, 15 V, Step−Down Switching Regulator
... time periods. The first one occurs when the series switch is on, the input voltage is connected to the input of the inductor. The output of the inductor is the output voltage, and the rectifier (or catch diode) is reverse biased. During this period, since there is a constant voltage source connected ...
... time periods. The first one occurs when the series switch is on, the input voltage is connected to the input of the inductor. The output of the inductor is the output voltage, and the rectifier (or catch diode) is reverse biased. During this period, since there is a constant voltage source connected ...
Introduction - Electrical and Computer Engineering
... Discharge of a Capacitance Writing a KCL equation at top node after switch closed, we have : dvC t vC t C ...
... Discharge of a Capacitance Writing a KCL equation at top node after switch closed, we have : dvC t vC t C ...
PCS5035 Quintet Precision Current Sources Built
... Another application for the Aeroflex PCS5035 device is to provide precision excitation sources and threshold detection for five temperature sensors. The temperature sensors are typically thermistors, but can also be RTDs or silicon diodes. Since these devices have negative temperature coefficients, ...
... Another application for the Aeroflex PCS5035 device is to provide precision excitation sources and threshold detection for five temperature sensors. The temperature sensors are typically thermistors, but can also be RTDs or silicon diodes. Since these devices have negative temperature coefficients, ...
PAM2304 Description Pin Assignments
... stability and transient response. To ensure the longest battery life in portable applications, the PAM2304 provides a power-saving PulseSkipping Modulation (PSM) mode to reduce quiescent current under light load operation to save power. The PAM2304 supports a range of input voltages from 2.5V to 5.5 ...
... stability and transient response. To ensure the longest battery life in portable applications, the PAM2304 provides a power-saving PulseSkipping Modulation (PSM) mode to reduce quiescent current under light load operation to save power. The PAM2304 supports a range of input voltages from 2.5V to 5.5 ...
Document
... ICE the collector current transported from the emitter the ICE-VBE nonlinearity is a nonlinear transconductance IBE the hole injection into the emitter also a nonlinear function of VBE. ICB the avalanche multiplication current a strong nonlinear function of both VBE and VCB has a 2-D n ...
... ICE the collector current transported from the emitter the ICE-VBE nonlinearity is a nonlinear transconductance IBE the hole injection into the emitter also a nonlinear function of VBE. ICB the avalanche multiplication current a strong nonlinear function of both VBE and VCB has a 2-D n ...
An undergraduate laboratory experiment on quantized conductance
... at G 0 , and smaller peaks are found near multiples of G 0 up to 5. The third, fourth, and fifth peaks, however, appear to be shifted to slightly lower conductance values. This is consistent with previous research, which showed that the peaks are shifted as if there were a residual resistance in ser ...
... at G 0 , and smaller peaks are found near multiples of G 0 up to 5. The third, fourth, and fifth peaks, however, appear to be shifted to slightly lower conductance values. This is consistent with previous research, which showed that the peaks are shifted as if there were a residual resistance in ser ...
MAX1677 Compact, High-Efficiency, Dual-Output Step-Up and LCD Bias DC-DC Converter General Description
... allows the MAX1677 to accept 1, 2, or 3-cell alkaline, NiCd, or NiMH batteries as well as 1-cell lithium-ion batteries. The device requires no external FETs and can maintain regulation while consuming only 20µA, making it ideal for hand-held pen-input and PDA devices operating with low-current “slee ...
... allows the MAX1677 to accept 1, 2, or 3-cell alkaline, NiCd, or NiMH batteries as well as 1-cell lithium-ion batteries. The device requires no external FETs and can maintain regulation while consuming only 20µA, making it ideal for hand-held pen-input and PDA devices operating with low-current “slee ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.