ZLNB2016
... The inputs Vpol1 and Vpol2 are designed to be wired to the power inputs of the LNB via ESD protection resistors (20k). These inputs control the HOR1/2, BHOR1/2 and ENA1/2 logic outputs. The HOR outputs will be low when their corresponding Vpol input is at or below 14V and high when Vpol is at or abo ...
... The inputs Vpol1 and Vpol2 are designed to be wired to the power inputs of the LNB via ESD protection resistors (20k). These inputs control the HOR1/2, BHOR1/2 and ENA1/2 logic outputs. The HOR outputs will be low when their corresponding Vpol input is at or below 14V and high when Vpol is at or abo ...
4.5V to 40V Input Automotive Flyback/Boost/SEPIC Power-Supply Controllers General Description Features
... The MAX15004A/B/MAX15005A/B high-performance, current-mode PWM controllers operate at an automotive input voltage range from 4.5V to 40V (load dump). The input voltage can go down as low as 2.5V after startup if VCC is supplied by an external bias voltage. The controllers integrate all the building ...
... The MAX15004A/B/MAX15005A/B high-performance, current-mode PWM controllers operate at an automotive input voltage range from 4.5V to 40V (load dump). The input voltage can go down as low as 2.5V after startup if VCC is supplied by an external bias voltage. The controllers integrate all the building ...
Electric field controlled semiconductor device
... ing \of oxide was formed 'by heating the wafer at about 650 degrees centigrade for forty minutes at a pressure 5. In combinatioma silicon wafer comprising a major portion of a ?rst conductivity type and including adja of 55 atmospheres. An aluminurn electrode ‘of about cent a major surface thereof a ...
... ing \of oxide was formed 'by heating the wafer at about 650 degrees centigrade for forty minutes at a pressure 5. In combinatioma silicon wafer comprising a major portion of a ?rst conductivity type and including adja of 55 atmospheres. An aluminurn electrode ‘of about cent a major surface thereof a ...
ZXMS6006DT8 Product Summary Features and Benefits
... 10. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipatio ...
... 10. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipatio ...
Fourth-Generation Field Stop IGBT with High
... When tasked with developing the fourth generation 650 V rated Field Stop (FS) Trench IGBTs, Fairchild’s engineers had a high bar to overcome to develop a successor to the successful third generation IGBTs. To meet their design goals for achieving higher performance without sacrificing reliability or ...
... When tasked with developing the fourth generation 650 V rated Field Stop (FS) Trench IGBTs, Fairchild’s engineers had a high bar to overcome to develop a successor to the successful third generation IGBTs. To meet their design goals for achieving higher performance without sacrificing reliability or ...
AN-8039 Using the FDDS100H06_F085 in Automotive Systems Background www.fairchildsemi.com
... VBB – VBB should be protected from the noise and fluctuations expected on unregulated vehicle power lines. High-frequency noise should be bypassed using local ceramic capacitors for each device, such as C2 in Figure 4. Because switching a load and/or lamp inrush can cause dips on VBB, a capacitor to ...
... VBB – VBB should be protected from the noise and fluctuations expected on unregulated vehicle power lines. High-frequency noise should be bypassed using local ceramic capacitors for each device, such as C2 in Figure 4. Because switching a load and/or lamp inrush can cause dips on VBB, a capacitor to ...
Chap002-2011
... • Hole density is represented by p. • For intrinsic silicon, n = ni = p. • The product of electron and hole concentrations is pn = ni2. • The pn product above holds when a semiconductor is in thermal equilibrium (not with an external voltage applied). ...
... • Hole density is represented by p. • For intrinsic silicon, n = ni = p. • The product of electron and hole concentrations is pn = ni2. • The pn product above holds when a semiconductor is in thermal equilibrium (not with an external voltage applied). ...
LC05111CMT
... self-discharge. The 0V battery charge start battery charger voltage (Vchg), it fix a gate of the charge system order FET to the VDD terminal voltage when it connect a battery charger of the above-mentioned voltage to PAC+ terminal between PAC- terminals. Gate-source voltage of the charge control FET ...
... self-discharge. The 0V battery charge start battery charger voltage (Vchg), it fix a gate of the charge system order FET to the VDD terminal voltage when it connect a battery charger of the above-mentioned voltage to PAC+ terminal between PAC- terminals. Gate-source voltage of the charge control FET ...
BJT Transistors and Characteristics ELEC 121
... Emitter-Stabilized Bias Circuit Collector-Emitter Loop Voltage Divider Bias Circuit DC Bias with Voltage Feedback Miscellaneous Bias Circuits ...
... Emitter-Stabilized Bias Circuit Collector-Emitter Loop Voltage Divider Bias Circuit DC Bias with Voltage Feedback Miscellaneous Bias Circuits ...
Zero-voltage switching for three-level capacitor clamping
... Abstract—A zero-voltage switching (ZVS) scheme for a threelevel capacitor clamping inverter based on the true pulsewidth modulation (PWM) pole is proposed in this paper. With this scheme, the main switches work with ZVS through the assistance of a small rating zero-current switching (ZCS) lossless a ...
... Abstract—A zero-voltage switching (ZVS) scheme for a threelevel capacitor clamping inverter based on the true pulsewidth modulation (PWM) pole is proposed in this paper. With this scheme, the main switches work with ZVS through the assistance of a small rating zero-current switching (ZCS) lossless a ...
TPS60230 数据资料 dataSheet 下载
... The enable pins EN1 and EN2 are used to enable the device or set it into shutdown. The TPS60230 is enabled if one of the enable pins is pulled higher than the enable trip point of 1.3 V. The device starts up by going through the soft start routine as described in the section Soft Start. Pulling both ...
... The enable pins EN1 and EN2 are used to enable the device or set it into shutdown. The TPS60230 is enabled if one of the enable pins is pulled higher than the enable trip point of 1.3 V. The device starts up by going through the soft start routine as described in the section Soft Start. Pulling both ...
Atmel ATR4251C Low-noise, High-dynamic-range AM/FM Antenna Amplifier IC Features
... Due to the long wavelength in AM bands, the antennas used for AM reception in automotive applications must be short compared to the wavelength. Therefore these antennas do not provide 50Ω output impedance, but have an output impedance of some pF. If these (passive) antennas are connected to the car ...
... Due to the long wavelength in AM bands, the antennas used for AM reception in automotive applications must be short compared to the wavelength. Therefore these antennas do not provide 50Ω output impedance, but have an output impedance of some pF. If these (passive) antennas are connected to the car ...
LTC4054-4.2 数据手册DataSheet 在线下载
... the PROG pin to fall below 100mV for short periods of time before the DC charge current has dropped to 1/10th the programmed value. The 1ms filter time (tTERM) on the termination comparator ensures that transient loads of this nature do not result in premature charge cycle termination. Once the aver ...
... the PROG pin to fall below 100mV for short periods of time before the DC charge current has dropped to 1/10th the programmed value. The 1ms filter time (tTERM) on the termination comparator ensures that transient loads of this nature do not result in premature charge cycle termination. Once the aver ...
Capacitor - IBT LUMHS
... With different dielectric materials between the same two parallel plates, different amounts of charge will deposit on the plates. Permittivity – The ratio of the flux density to the electric field intensity in the dielectric. A measure of how easily the dielectric will “permit” the establishment ...
... With different dielectric materials between the same two parallel plates, different amounts of charge will deposit on the plates. Permittivity – The ratio of the flux density to the electric field intensity in the dielectric. A measure of how easily the dielectric will “permit” the establishment ...
PS9331L, PS9331L2 Data Sheet Preliminary
... output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics. (If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the b ...
... output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics. (If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to the abovementioned coupling, design the input-side circuit so that the b ...
P10345 – Automated TFT Noise Characterization Platform Kendell
... Since 1/f noise is typically a very low frequency phenomenon, the noise contributed at low frequencies will be considered. We define a minimum bandwidth for the system of 0.1Hz. The circuit topology heavily relies on using capacitors to attenuate the noise, even at low frequencies. Thus, attenuation ...
... Since 1/f noise is typically a very low frequency phenomenon, the noise contributed at low frequencies will be considered. We define a minimum bandwidth for the system of 0.1Hz. The circuit topology heavily relies on using capacitors to attenuate the noise, even at low frequencies. Thus, attenuation ...
General Purpose, Portable Impedance/LCR Meter
... The Model 252 Impedance/LCR Meter uses a 3.3 pF capacitor (C6 in Figure 2-6) to compensate for the capacitance of the test leads. If the 252 is used with a test fixture, the larger capacitance of the fixture must also be compensated for. There are two methods for compensating this larger capacitance ...
... The Model 252 Impedance/LCR Meter uses a 3.3 pF capacitor (C6 in Figure 2-6) to compensate for the capacitance of the test leads. If the 252 is used with a test fixture, the larger capacitance of the fixture must also be compensated for. There are two methods for compensating this larger capacitance ...
Integrating Bourns® Resistive Products to Control Current and
... High current handling and low DC resistance in a compact form factor are available in Bourns® SRU1048 Series shielded inductor. This shielded SMD power inductor has a unit height up to 4.8 mm and rated current up to 7.8 A. Depending on the requirements of the circuit, a semi-shielded Bourns® SRN ind ...
... High current handling and low DC resistance in a compact form factor are available in Bourns® SRU1048 Series shielded inductor. This shielded SMD power inductor has a unit height up to 4.8 mm and rated current up to 7.8 A. Depending on the requirements of the circuit, a semi-shielded Bourns® SRN ind ...
MAX1513/MAX1514 TFT-LCD Power-Supply Controllers General Description Features
... for startup sequencing. The MAX1513 includes an additional linear-regulator controller and a high-performance buffer amplifier. The MAX1513/MAX1514 can operate from 2.7V to 5.5V input supplies and provide overload protection with timer delay latch on all the regulated outputs. The step-up regulator ...
... for startup sequencing. The MAX1513 includes an additional linear-regulator controller and a high-performance buffer amplifier. The MAX1513/MAX1514 can operate from 2.7V to 5.5V input supplies and provide overload protection with timer delay latch on all the regulated outputs. The step-up regulator ...
p-Channel JFET
... • the depletion zone increases • ID decreases (ID < IDSS) • eventually ID = 0A Also note that at high levels of VDS the JFET reaches a breakdown situation. ID increases ...
... • the depletion zone increases • ID decreases (ID < IDSS) • eventually ID = 0A Also note that at high levels of VDS the JFET reaches a breakdown situation. ID increases ...
Low-Power, Precision SINGLE-SUPPLY OPERATIONAL AMPLIFIERS FEATURES ±
... power-supply rejection, and a wide supply range provides excellent accuracy and versatility. Single, dual, and quad versions have identical specifications for maximum design flexibility. These general-purpose op amps are ideal for portable and battery-powered applications. The OPA234 series op amps ...
... power-supply rejection, and a wide supply range provides excellent accuracy and versatility. Single, dual, and quad versions have identical specifications for maximum design flexibility. These general-purpose op amps are ideal for portable and battery-powered applications. The OPA234 series op amps ...
Nonisolated High Step-Up Stacked Converter Based on Boost
... remains [16]. Active clamping approaches also resolve these problems and reduce switching losses, but leads to a complex structure with increased number of switches [17], [18]. In this paper, to obtain a high step-up capability with high efficiency, an alternative structure based on isolated-type co ...
... remains [16]. Active clamping approaches also resolve these problems and reduce switching losses, but leads to a complex structure with increased number of switches [17], [18]. In this paper, to obtain a high step-up capability with high efficiency, an alternative structure based on isolated-type co ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.