300-MHz Quadrature Modulator U2793B
... 2. The LO input impedance is consisting of a 50 Ω resistor in series with a 15 pF capacitor. 3. With the pins 19 and 20 spurious performance especially for low frequency application can be improved by adding a chip capacitor between LP1 and LP2. In conjunction with a parallel resistor the output lev ...
... 2. The LO input impedance is consisting of a 50 Ω resistor in series with a 15 pF capacitor. 3. With the pins 19 and 20 spurious performance especially for low frequency application can be improved by adding a chip capacitor between LP1 and LP2. In conjunction with a parallel resistor the output lev ...
ReadiLED™ Installation Instructions
... Do not mount near gas or electric heaters. Equipment should be mounted in locations and at heights where it will not readily be subjected to tampering by unauthorized personnel. The use of accessory equipment not recommended by the manufacturer may cause an unsafe condition. Do not use this equipmen ...
... Do not mount near gas or electric heaters. Equipment should be mounted in locations and at heights where it will not readily be subjected to tampering by unauthorized personnel. The use of accessory equipment not recommended by the manufacturer may cause an unsafe condition. Do not use this equipmen ...
for Low-Voltage High
... a fast sensing speed under small voltage swing than the voltage-sensing scheme. the new logic circuit can be used in the low-voltage low-power digital system for high speed applications. I t is shown that the LCSCPTL has an operation speed about 2.2 to 2.6 times higher than the CPL, which is known t ...
... a fast sensing speed under small voltage swing than the voltage-sensing scheme. the new logic circuit can be used in the low-voltage low-power digital system for high speed applications. I t is shown that the LCSCPTL has an operation speed about 2.2 to 2.6 times higher than the CPL, which is known t ...
(A to D) Conversion notes
... a) The counter is cleared and all it’s 8 O/Ps are Lo. b) The D to A converter has zeros on all it’s I/Ps because the counter O/Ps are Lo. c) The – I/P of the comparator is at 0V because the D to A converter O/P is 0V. d) The Control circuit will produce a momentary Enable pulse and a delayed Clear p ...
... a) The counter is cleared and all it’s 8 O/Ps are Lo. b) The D to A converter has zeros on all it’s I/Ps because the counter O/Ps are Lo. c) The – I/P of the comparator is at 0V because the D to A converter O/P is 0V. d) The Control circuit will produce a momentary Enable pulse and a delayed Clear p ...
An Intelligent CMOS Image Sensor with negative feedback resetting Masayuki Ikebe Junichi Motohisa
... of intermediate image data makes it possible to read the change in luminosity during charge accumulation, and we expect this capability to be exploited in a variety of applications [3]. In this paper we show how a CMOS image sensor with functionality can be obtained by using a negative-feedback rese ...
... of intermediate image data makes it possible to read the change in luminosity during charge accumulation, and we expect this capability to be exploited in a variety of applications [3]. In this paper we show how a CMOS image sensor with functionality can be obtained by using a negative-feedback rese ...
ADS1286 数据资料 dataSheet 下载
... 0.15LSB peak-to-peak. In this case, the ADS1286 noise will contribute virtually no uncertainty to the output code. However, for reduced references, the noise may become a significant fraction of an LSB and cause undesirable jitter in the output code. For example, with a 2.5V reference this same 200µ ...
... 0.15LSB peak-to-peak. In this case, the ADS1286 noise will contribute virtually no uncertainty to the output code. However, for reduced references, the noise may become a significant fraction of an LSB and cause undesirable jitter in the output code. For example, with a 2.5V reference this same 200µ ...
Product Change Notice
... In an effort to simplify fuse selection within our UL low voltage fuse portfolio, Bussmann has introduced the Fuses Made Simple™ program. This new program groups the UL low voltage fuse portfolio into four distinct families, based on key performance characteristics, making it easy for users to selec ...
... In an effort to simplify fuse selection within our UL low voltage fuse portfolio, Bussmann has introduced the Fuses Made Simple™ program. This new program groups the UL low voltage fuse portfolio into four distinct families, based on key performance characteristics, making it easy for users to selec ...
ics843001-21.pdf
... the HiPerClocksTM family of high performance clock solutions from ICS. The dual crystal interface allows the synthesizer to support up to two communications standards in a given application (i.e. 1 GB Ethernet with a 25MHz crystal and 1 Gb Fibre Channel using a 25.5625MHz crystal). The rms phase jit ...
... the HiPerClocksTM family of high performance clock solutions from ICS. The dual crystal interface allows the synthesizer to support up to two communications standards in a given application (i.e. 1 GB Ethernet with a 25MHz crystal and 1 Gb Fibre Channel using a 25.5625MHz crystal). The rms phase jit ...
Recent Developments for Off-Line Testing of Stator Insulation
... testing. The traditional off-line DC tests are the insulation resistance (IR) and polarization index (PI) tests, as described in IEEE 43. In addition, AC tests such as the off-line PD test or the dissipation factor (power factor) tip-up test can also be done. All these tests are well understood and ...
... testing. The traditional off-line DC tests are the insulation resistance (IR) and polarization index (PI) tests, as described in IEEE 43. In addition, AC tests such as the off-line PD test or the dissipation factor (power factor) tip-up test can also be done. All these tests are well understood and ...
Design of Wireless Smart Metering System Based on MSP430
... designed in this paper. This system can enable the user to monitor the electricity parameters like voltage, current, real and reactive power consumption of the residential appliances. The benefit of demand response can thus be exploited with the help of smart meter by setting the usage times of defe ...
... designed in this paper. This system can enable the user to monitor the electricity parameters like voltage, current, real and reactive power consumption of the residential appliances. The benefit of demand response can thus be exploited with the help of smart meter by setting the usage times of defe ...
Foundry Technologies Focused on Environmental and Ecological
... distinguishing feature is utilizing TSL Schottky CoSi diodes with low VON. CoSi diodes allow to rectify very small voltages generated by the on-chip antenna (compared with standard rectifiers built on p-n diodes that work at V > 0.5 V). A cross-section of a CoSi diode implemented in RFID designs is ...
... distinguishing feature is utilizing TSL Schottky CoSi diodes with low VON. CoSi diodes allow to rectify very small voltages generated by the on-chip antenna (compared with standard rectifiers built on p-n diodes that work at V > 0.5 V). A cross-section of a CoSi diode implemented in RFID designs is ...
- Yokogawa
... Low noise compact current probe for measuring low level currents from 1 mA to 5 A. Best suited for design and verification applications requiring high-sensitivity at low currents. High-sensitivity (10x more sensitive than previous models) In comparison with existing models (701928/701929/701932/7019 ...
... Low noise compact current probe for measuring low level currents from 1 mA to 5 A. Best suited for design and verification applications requiring high-sensitivity at low currents. High-sensitivity (10x more sensitive than previous models) In comparison with existing models (701928/701929/701932/7019 ...
AN551 : Recommended Test Procedures for Operational
... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without no ...
... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without no ...
C41 Audio Control Center
... CONTROL DATA OUTPUTS. To facilitate system integration, the C41 outputs control data for source components. This allows remote operation of non-McIntosh components either by direct connection to compatible data inputs or via a McIntosh Remote Translator, a “learning” device that makes it possible to ...
... CONTROL DATA OUTPUTS. To facilitate system integration, the C41 outputs control data for source components. This allows remote operation of non-McIntosh components either by direct connection to compatible data inputs or via a McIntosh Remote Translator, a “learning” device that makes it possible to ...
sb6100 industrial shock-block™ technical faq
... current is 6 mA or more but not when the ground-fault current is 4 mA or less and is intended to be used in circuits where the line-to-line voltage is 240 V or less. Class B – A GFCI that will interrupt the circuit to the load when the ground-fault current exceeds 20 mA. Only used with swimming pool ...
... current is 6 mA or more but not when the ground-fault current is 4 mA or less and is intended to be used in circuits where the line-to-line voltage is 240 V or less. Class B – A GFCI that will interrupt the circuit to the load when the ground-fault current exceeds 20 mA. Only used with swimming pool ...
MRF151G transistor datasheet
... between the terminals. The metal anode gate structure determines the capacitors from gate–to–drain (Cgd), and gate– to–source (C gs ). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain–to–source (Cds). These capacitances are characterized as ...
... between the terminals. The metal anode gate structure determines the capacitors from gate–to–drain (Cgd), and gate– to–source (C gs ). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain–to–source (Cds). These capacitances are characterized as ...
