DATA SHEET BSR13; BSR14 NPN switching transistors Product specification
... 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconducto ...
... 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconducto ...
BITX40 with Raduino - tips and mods
... Since both LEDs won't be on at the same time, they can share a single current limiting resistor in the 'common' or 'ground' leg of the connector headed out to the Bi-Color LED. I think current draw for Red and Green are slightly different, but I just picked a resistor which would give me the most ev ...
... Since both LEDs won't be on at the same time, they can share a single current limiting resistor in the 'common' or 'ground' leg of the connector headed out to the Bi-Color LED. I think current draw for Red and Green are slightly different, but I just picked a resistor which would give me the most ev ...
BITX40 with Raduino - tips and mods
... Since both LEDs won't be on at the same time, they can share a single current limiting resistor in the 'common' or 'ground' leg of the connector headed out to the Bi-Color LED. I think current draw for Red and Green are slightly different, but I just picked a resistor which would give me the most ev ...
... Since both LEDs won't be on at the same time, they can share a single current limiting resistor in the 'common' or 'ground' leg of the connector headed out to the Bi-Color LED. I think current draw for Red and Green are slightly different, but I just picked a resistor which would give me the most ev ...
EMT 111- Electronic Devices WHAT IS
... EMT 111- Electronic Devices OBJECTIVES 1. To provide the student with a comprehensive understanding of electronic devices. 2. To learn electronic devices such as diode, bipolar junction transistor and FET 3. Understanding the concept of electronic devices operation 4. Analyze the bias techniques fo ...
... EMT 111- Electronic Devices OBJECTIVES 1. To provide the student with a comprehensive understanding of electronic devices. 2. To learn electronic devices such as diode, bipolar junction transistor and FET 3. Understanding the concept of electronic devices operation 4. Analyze the bias techniques fo ...
For reverse bias
... Depletion region expands with reverse bias. A reverse-biased diode prevents current from going through it, due to the expanded depletion region. In actuality, a very small amount of current can and does go through a reverse-biased diode, called the leakage current, but it can be ignored for most pur ...
... Depletion region expands with reverse bias. A reverse-biased diode prevents current from going through it, due to the expanded depletion region. In actuality, a very small amount of current can and does go through a reverse-biased diode, called the leakage current, but it can be ignored for most pur ...
First time User Guide BJT Lab V2.0
... Increasing base width leads to smaller current gain factor Refer to [1] https://nanohub.org/resources/5084/ for detailed information about the operation of BJT. Saumitra R Mehrotra ...
... Increasing base width leads to smaller current gain factor Refer to [1] https://nanohub.org/resources/5084/ for detailed information about the operation of BJT. Saumitra R Mehrotra ...
Three Phase Semi Converter
... Figure 1 shows the circuit diagram of three phase semi converter supplying an R-L-E load.The output voltages vo across load terminals is controlled by varying the firing angles of SCRs T1,T2 and T3.The diodes D1,D2 and D3 provide merely a return path for the current to the most negative line termina ...
... Figure 1 shows the circuit diagram of three phase semi converter supplying an R-L-E load.The output voltages vo across load terminals is controlled by varying the firing angles of SCRs T1,T2 and T3.The diodes D1,D2 and D3 provide merely a return path for the current to the most negative line termina ...
5100-C Digital Output Module Datasheet
... If an output is used to drive transistor loads, proper current limiting must be observed. If an output is used to drive inductive loads, inductive kicks must be limited via high-speed diodes and/or equivalent devices. When a digital device is powered via an external power source, it may be necessary ...
... If an output is used to drive transistor loads, proper current limiting must be observed. If an output is used to drive inductive loads, inductive kicks must be limited via high-speed diodes and/or equivalent devices. When a digital device is powered via an external power source, it may be necessary ...
Digital Power Monitoring Solutions
... Intersil’s Digital Power Monitoring (DPM) devices provide a bi-directional high-side and low-side digital current sense and voltage monitor with serial interface. The device monitors current and voltage and provides the results digitally along with calculated power. The DPM provides tight accuracy w ...
... Intersil’s Digital Power Monitoring (DPM) devices provide a bi-directional high-side and low-side digital current sense and voltage monitor with serial interface. The device monitors current and voltage and provides the results digitally along with calculated power. The DPM provides tight accuracy w ...
Mechanical Actuation System
... 7.3.4: MOSFET • Acronym for metal-oxide semiconductor fieldeffect transistor, a common type of transistor in which charge carriers, such as electrons, flow along channels • The width of the channel, which determines how well the device conducts, is controlled by an electrode called the gate, separa ...
... 7.3.4: MOSFET • Acronym for metal-oxide semiconductor fieldeffect transistor, a common type of transistor in which charge carriers, such as electrons, flow along channels • The width of the channel, which determines how well the device conducts, is controlled by an electrode called the gate, separa ...
Schottky diode I-V Characteristics
... between a metal and a semiconductor, creating a Schottky barrier (instead of a semiconductor– semiconductor junction as in conventional diodes). • Typical metals used are molybdenum, platinum, chromium or tungsten; and the semiconductor would typically be N-type silicon. • The metal side acts as the ...
... between a metal and a semiconductor, creating a Schottky barrier (instead of a semiconductor– semiconductor junction as in conventional diodes). • Typical metals used are molybdenum, platinum, chromium or tungsten; and the semiconductor would typically be N-type silicon. • The metal side acts as the ...
loss-free resistor-based power factor correction using a
... Compared to the conventional PFC boost converter, one diode is eliminated from the line-current path, so that the line current only flows through two semiconductors and, therefore, conduction losses are reduced. When the AC input voltage goes positive, the gate of S1 is driven high and current flows ...
... Compared to the conventional PFC boost converter, one diode is eliminated from the line-current path, so that the line current only flows through two semiconductors and, therefore, conduction losses are reduced. When the AC input voltage goes positive, the gate of S1 is driven high and current flows ...
EEEE 482 Lab1 Rev2015_1 - RIT
... fabricated on the same substrate is the reduction of transistor parameter mismatch and a nearlyidentical temperature of operation of the transistors. The particular IC array used in this lab is the CA3046 chip (or equivalent NTE912). There are five transistors on the chip, including a differential p ...
... fabricated on the same substrate is the reduction of transistor parameter mismatch and a nearlyidentical temperature of operation of the transistors. The particular IC array used in this lab is the CA3046 chip (or equivalent NTE912). There are five transistors on the chip, including a differential p ...
CN-0053 8/10/12/14位乘法DAC AD5450/AD5451/AD5452/AD5453 的精密、双极性配置.
... In any circuit where accuracy is important, careful consideration of the power supply and ground return layout helps to ensure the rated performance. The printed circuit board should be designed so that the analog and digital sections are separated and confined to certain areas of the board. If the ...
... In any circuit where accuracy is important, careful consideration of the power supply and ground return layout helps to ensure the rated performance. The printed circuit board should be designed so that the analog and digital sections are separated and confined to certain areas of the board. If the ...
Kreutter: Circuits 2 Voltage/Current/Resistance Lab Voltage, Current
... Be sure to connect the positive lead from the power supply to the positive terminal of the ammeter. To connect multiple resistors (loads), use alligator clips to fasten them together in series. Your final connection should be to the negative terminal of the power supply. IF YOU SEE OR SMELL SMOKE, ( ...
... Be sure to connect the positive lead from the power supply to the positive terminal of the ammeter. To connect multiple resistors (loads), use alligator clips to fasten them together in series. Your final connection should be to the negative terminal of the power supply. IF YOU SEE OR SMELL SMOKE, ( ...
Lecture 2
... The source terminal of an n-channel(p-channel) transistor is defined as whichever of the two terminals has a lower(higher) voltage. When a transistor is turned ON, current flows from the drain to source in an n-channel device and from source to drain in a p-channel transistor. In both cases, t ...
... The source terminal of an n-channel(p-channel) transistor is defined as whichever of the two terminals has a lower(higher) voltage. When a transistor is turned ON, current flows from the drain to source in an n-channel device and from source to drain in a p-channel transistor. In both cases, t ...
Electron Devices – UNIT 5 Monolithic ICs (DOC)
... leakage current can cause a serious problem in circuits operating at very low current levels. The capacitance of the reverse-biased junction may affect the circuit high-frequency performance, and the junction break down voltage imposes limits on the usable level of supply voltage. All these adverse ...
... leakage current can cause a serious problem in circuits operating at very low current levels. The capacitance of the reverse-biased junction may affect the circuit high-frequency performance, and the junction break down voltage imposes limits on the usable level of supply voltage. All these adverse ...
high step-up converter with three-winding coupled
... In practice, the step-up voltage gain is limited by effects of the power switch, rectifier diode, and the resistances of the inductors and capacitors. In addition, the extreme duty cycle may result in a serious reverse-recovery problem and conduction losses. A fly back converter is able to achieve h ...
... In practice, the step-up voltage gain is limited by effects of the power switch, rectifier diode, and the resistances of the inductors and capacitors. In addition, the extreme duty cycle may result in a serious reverse-recovery problem and conduction losses. A fly back converter is able to achieve h ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.