650V IGBT4 the optimized device
... to increase the chip thickness, to reduce the MOS channel width, and to enhance the back-side emitter efficiency. As a consequence, also the short-circuit robustness is significantly improved. ...
... to increase the chip thickness, to reduce the MOS channel width, and to enhance the back-side emitter efficiency. As a consequence, also the short-circuit robustness is significantly improved. ...
DRV590 数据资料 dataSheet 下载
... APPLICATION INFORMATION driving TEC elements (continued) filter component selection The LC filter may be designed from a couple of different perspectives, both of which may help estimate the overall performance of the system. The filter should be designed for the worst-case conditions during operati ...
... APPLICATION INFORMATION driving TEC elements (continued) filter component selection The LC filter may be designed from a couple of different perspectives, both of which may help estimate the overall performance of the system. The filter should be designed for the worst-case conditions during operati ...
www.BDTIC.com/TI Designing With Logic SDYA009C June 1997
... Data sheets, which usually give information on device behavior only under recommended operating conditions, may only partially answer engineering questions that arise during the development of systems using logic devices. However, information is frequently needed regarding the behavior of the device ...
... Data sheets, which usually give information on device behavior only under recommended operating conditions, may only partially answer engineering questions that arise during the development of systems using logic devices. However, information is frequently needed regarding the behavior of the device ...
Conductivity-Modulated FETs-IGBT
... transistor has a lower saturation voltage (VCE sat ≤ VDSon) and is cheaper. In comparison with a bipolar transistor (assuming the same chip dimensions), a power MOSFET with a reverse voltage of VDS = 1000 V has significantly higher ON-resistance, and therefore high voltage drops and high static loss ...
... transistor has a lower saturation voltage (VCE sat ≤ VDSon) and is cheaper. In comparison with a bipolar transistor (assuming the same chip dimensions), a power MOSFET with a reverse voltage of VDS = 1000 V has significantly higher ON-resistance, and therefore high voltage drops and high static loss ...
ISL9R1560PF2 15A, 600V, STEALTH™ Diode ISL9R1560PF2 — STEALTH™ Diode
... applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase ...
... applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase ...
A simple three-terminal IC bandgap reference
... bases, so that it is a straight forward and simple matter to obtain overall output voltages above the bandgap voltage. III. A. ...
... bases, so that it is a straight forward and simple matter to obtain overall output voltages above the bandgap voltage. III. A. ...
FDD4141_F085
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
Monday, February 17, 2014
... produces a positive voltage gain of +Vemf,1 Next we find resistor R1, which produces a voltage drop V1 given by -iR1 Continuing around the circuit we find resistor R2, which produces a voltage drop V2 given by -iR2 Next we meet a second source of emf, Vemf,2 This source of emf is wired into ...
... produces a positive voltage gain of +Vemf,1 Next we find resistor R1, which produces a voltage drop V1 given by -iR1 Continuing around the circuit we find resistor R2, which produces a voltage drop V2 given by -iR2 Next we meet a second source of emf, Vemf,2 This source of emf is wired into ...
MAX4561/MAX4568/MAX4569 ±15kV ESD-Protected, Low-Voltage, SPDT/SPST, CMOS Analog Switches General Description
... There are diodes from NC/NO to the supplies in addition to the SCRs. A resistance in series with each of these diodes limits the current into the supplies during an ESD strike. The diodes protect these terminals from overvoltages that are not a result of ESD strikes. These diodes also protect the de ...
... There are diodes from NC/NO to the supplies in addition to the SCRs. A resistance in series with each of these diodes limits the current into the supplies during an ESD strike. The diodes protect these terminals from overvoltages that are not a result of ESD strikes. These diodes also protect the de ...
1N5820 - 1N5822 Features and Benefits Mechanical Data
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
BCX51/ 52/ 53 Features Mechanical Data
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
BD63860EFV
... conditions (such as motor output shorts) and is not designed to be used as an active security device for the application. Therefore, applications should not be designed under the assumption that this circuitry will engage. After OCP has engaged, if irregular conditions continue after a power cycle o ...
... conditions (such as motor output shorts) and is not designed to be used as an active security device for the application. Therefore, applications should not be designed under the assumption that this circuitry will engage. After OCP has engaged, if irregular conditions continue after a power cycle o ...
BU4015B
... (Note 1) Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 5mW per 1°C above 25°C. (Note 2) IC only. Reduce 10mW per 1°C above 25°C. Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between ...
... (Note 1) Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 5mW per 1°C above 25°C. (Note 2) IC only. Reduce 10mW per 1°C above 25°C. Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.