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Lecture 3 - UniMAP Portal
Lecture 3 - UniMAP Portal

... Nitride Deposition: 3 SiH4 + 4 NH3  Si3N4 + 12 H2 Polysilicon Deposition: SiH4  Si + 2 H2 Process Conditions (Silicon Nitride LPCVD) Flow Rates: 10 - 300 sccm Temperature: 600 degrees C. Pressure: 100 mTorr Polysilicon H2 N2 SiH4 * AsH3 B2H6 PH3 ...
academic affairs - Springfield Technical Community College
academic affairs - Springfield Technical Community College

... Describe AC/DC operation. Describe connecting inductive meter. Describe how to measure very small amps with an inductive meter. 5. Describe ranges on a scale. ...
Datasheet - Texas Instruments
Datasheet - Texas Instruments

Chapter 3 IGBT Module Selection and Application
Chapter 3 IGBT Module Selection and Application

... stress caused by this heat change and so its life span depends on the operating conditions. Therefore, the design life of the IGBT module must be longer than that of the power converters. In most cases, the temperature change of the IGBT module is checked and the life design is performed based on th ...
FMMT591QTA - Diodes Incorporated
FMMT591QTA - Diodes Incorporated

PAM2812ABR - Diodes Incorporated
PAM2812ABR - Diodes Incorporated

Current Electricity-2014
Current Electricity-2014

... How does the resistance of a ohmic depend upon the applied voltage? What is the effect of temperature on relaxation time of electrons in metal? How does the electrical conductivity of an electrolyte change with decrease of temperature? The applied p.d. across a given resistance is altered so that he ...
BH6766FVM
BH6766FVM

... stress. Always discharge capacitors after each process or step. Always turn the IC’s power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when transporting or ...


... With the 600V IGBT3, including trench and fieldstop technology, Infineon introduced an IGBT device in 2003 [1], which still offers benchmarking characteristics. However, the 600V IGBT3 has been optimized for smaller power applications, or higher power in very low stray inductance applications. The s ...
Paper 6a.1_publicati..
Paper 6a.1_publicati..

... in non-silicon platforms has been lacking, III-V semiconductors are attractive for a multitude of applications, owing to their higher carrier mobility and higher breakdown voltage compared to silicon [1]. In addition to improved material properties, semi-insulating InP, GaAs and InAs substrates can ...
BA00CC0WCP-V5
BA00CC0WCP-V5

Surge Protection Module
Surge Protection Module

MC34653, 1.0 A Negative Voltage Hot Swap Controller
MC34653, 1.0 A Negative Voltage Hot Swap Controller

... circuit boards be inserted and removed from the system without powering down the entire system. When a circuit board is inserted into or removed from a live backplane, the filter or bypass capacitors at the input of the board’s power module or switching power supply can cause large transient current ...
ISL9R460PF2 4 A, 600 V, STEALTH Diode —
ISL9R460PF2 4 A, 600 V, STEALTH Diode —

... STEALTH™ family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in sw ...
TL3016 数据资料 dataSheet 下载
TL3016 数据资料 dataSheet 下载

... Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 7 V to 7 V Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
TPS2838 数据资料 dataSheet 下载
TPS2838 数据资料 dataSheet 下载

... voltage reaches the threshold and the regulator output is stable. This function ensures both FET drivers are off when the VCC voltage is below the voltage threshold. The TPS2838/39/48/49 devices are offered in the thermally enhanced 14-pin and 16-pin PowerPAD TSSOP package. The PowerPAD package feat ...


... corresponding to a pre-determined speed of rotation, followed by one or more periods of operation at other constant loads corresponding to different speeds of rotation (carried out, for example, by means of a change of the number of poles in the case of induction motors) NOTE There is no rest or de- ...
RT6254A, RT6254B - Richtek Technology
RT6254A, RT6254B - Richtek Technology

DC Shunts Direct current instrument shunts are used to extend the
DC Shunts Direct current instrument shunts are used to extend the

... have a low resistivity in order to keep the self-heating to a minimum, and it must also have a low thermal E.M.F. against copper. All our shunts are designed using a special alloy called manganin, which meets these criteria. The final design consideration is size, which relates to self-heating as we ...
Circuit Note
Circuit Note

RB228T100
RB228T100

... Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no respo ...
ACTUATORS FOR DYNAMIC APPLICATIONS - tutorial
ACTUATORS FOR DYNAMIC APPLICATIONS - tutorial

... In this approach, the system is equivalent to a damped harmonic oscillator, driven by the piezoelectric force. This means that for a given driving force (i.e. voltage amplitude), the amplitude of the displacement will increase up to the mechanical resonance, then decrease. Phase will change from 0 t ...
LM10010 VID Voltage Programmer for Point of
LM10010 VID Voltage Programmer for Point of

PAM2312 Description Pin Assignments
PAM2312 Description Pin Assignments

... Pulse- Skipping Modulation (PSM) mode to reduce quiescent current under light load operation to save power. The PAM2312 supports a range of input voltages from 2.5V to 5.5V, allowing the use of a single Li+/Li-polymer cell, multiple Alkaline/NiMH cell, USB, and other standard power sources. The outp ...
UCC5614 数据资料 dataSheet 下载
UCC5614 数据资料 dataSheet 下载

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Thermal runaway



Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.
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