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MMST3904
MMST3904

NL1036_NL7171
NL1036_NL7171

L12b_4345_Sp02
L12b_4345_Sp02

... CONTACT RESISTANCE THE RESISTANCE RC ADDED BY A SINGLE CONTACT HAVING WIDTH WC AND LENGTH LC EQUALS RC = (RS*C)1/2 COTH(LC *(RS/ C)1/2)/WC RS – SHEET RESISTANCE OF THE RESISTOR MATERIAL C – SPECIFIC CONTACT RESISTANCE ...
AM8881 - TIXER.RU
AM8881 - TIXER.RU

Computationally-efficient Finite-element-based Thermal
Computationally-efficient Finite-element-based Thermal

... component of electric/hybrid electric vehicle (EV/HEV) powertrains. It is therefore important that vehicle powertrain-level and system-level designers and control engineers have access to accurate yet computationally-efficient (CE), physicsbased modeling tools of the thermal and electromagnetic (EM) ...
Data Sheet HSMS-286x Series Surface Mount Microwave  Schottky Detector Diodes Description
Data Sheet HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Description

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AL1696 Description Features Pin Assignments Applications

BU2099FV
BU2099FV

CAT4016 - LED Driver, 16-Channel, Constant Current
CAT4016 - LED Driver, 16-Channel, Constant Current

TPS22975 5.7-V 6-A 16-mΩ On-Resistance
TPS22975 5.7-V 6-A 16-mΩ On-Resistance

Precision, 20MHz, 0.9pA, Low-Noise, RRIO, CMOS Op Amp with
Precision, 20MHz, 0.9pA, Low-Noise, RRIO, CMOS Op Amp with

... Specified by design and characterization; not production tested. Disable time (tOFF) and enable time (tON) are defined as the time between the 50% point of the signal applied to the SHDN pin and the point at which the output voltage reaches the 10% (disable) or 90% (enable) level. Full shutdown refe ...
RT8238A - Richtek Technology
RT8238A - Richtek Technology

IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)

AN10361 Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board
AN10361 Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board

... A partly integrated solution features a low voltage drop and a reduced number of components. The BISS loadswitch contains a PNP low VCEsat (BISS) transistor as pass transistor and a NPN resistor-equipped transistor as control transistor in a 6pin package. The current portfolio (June 2005) includes 0 ...
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BQ24640 数据资料 dataSheet 下载

LTC3261 - High Voltage, Low Quiescent Current Inverting Charge
LTC3261 - High Voltage, Low Quiescent Current Inverting Charge

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REG71055-Q1 数据资料 dataSheet 下载

PAM2303 Description Pin Assignments
PAM2303 Description Pin Assignments

... Higher values, lower cost ceramic capacitors are now becoming available in smaller case sizes. Their high ripple current, high voltage rating and low ESR make them ideal for switching regulator applications. Using ceramic capacitors can achieve very low output ripple and small circuit size. When cho ...
TPS65137 数据资料 dataSheet 下载
TPS65137 数据资料 dataSheet 下载

... The TPS65137 consists of a boost converter using a LDO as post regulator. The output voltage of the boost converter is regulated to operate the internal LDO above its dropout voltage maintaining best line and load regulation of OUTP. The internal LDO disconnects OUTP during shutdown and allows regul ...
March 2009 - How to Choose a Voltage Reference
March 2009 - How to Choose a Voltage Reference

... then tied to a supply. This becomes, in essence, a three terminal circuit. The shared reference/resistor terminal is the output. The resistor must be chosen such that the minimum and maximum currents through the reference are within the specified range over the entire supply range and load current r ...
PowerPoint 簡報
PowerPoint 簡報

... – It can be seen that at higher temperatures substantial energy is provided as thermal energy, resulting in considerable reduction of primary (electrical) energy. • The high temperature also allows high current density operation as both ohmic resistance losses from the electrolyte and electrode mate ...
Designing of an office appliance system using temperature.pdf
Designing of an office appliance system using temperature.pdf

EEE331-Exp-6
EEE331-Exp-6

... A simple current source may be formed by connecting another NMOS transistor as shown in Fig. 6.2. If the transistors MR and MO are matched, then the current IO through the transistor MO is equal to IR. So the change in RD will not effect the current IO. However due to Early effect at output characte ...
Is Your UPS Rated for Industrial Environments?
Is Your UPS Rated for Industrial Environments?

Basic Physics of Semiconductors
Basic Physics of Semiconductors

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Thermal runaway



Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.
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