Download ISL9R1560PF2 15A, 600V, STEALTH™ Diode ISL9R1560PF2 — STEALTH™ Diode

ISL9R1560PF2
15A, 600V, STEALTH™ Diode
Feature
Description
• Stealth Recovery trr = 29.4 ns (@ IF = 15 A)
The ISL9R1560PF2 is a STEALTH™ diode optimized for low
loss performance in high frequency hard switched
applications. The STEALTH™ family exhibits low reverse
recovery current (IRR) and exceptionally soft recovery under
typical operating conditions. This device is intended for use
as a free wheeling or boost diode in power supplies and other
power switching applications. The low IRR and short ta phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions under
which the diode may be operated without the use of
additional snubber circuitry. Consider using the STEALTH™
diode with an SMPS IGBT to provide the most efficient and
highest power density design at lower cost.
• Max Forward Voltage, VF = 2.2 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
Symbol
TO-220F
K
A
CATHODE
ANODE
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM
Parameter
Rating
600
Unit
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current (TC = 25oC)
15
A
IFRM
Repetitive Peak Surge Current (20 kHz Square Wave)
30
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)
200
A
VRWM
VR
PD
EAVL
TJ, TSTG
TL
Repetitive Peak Reverse Voltage
Power Dissipation
30
W
Avalanche Energy (1 A, 40 mH)
20
mJ
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6 mm) from Case for 10s
-55 to 150
°C
300
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
ISL9R1560PF2 Rev. C1
1
www.fairchildsemi.com
ISL9R1560PF2 — STEALTH™ Diode
November 2013
Device Marking
R1560PF2
Device
ISL9R1560PF2
Package
TO-220F-2L
Tape Width
N/A
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 600 V
TC = 25°C
-
-
100
µA
TC = 125°C
-
-
1.0
mA
On State Characteristics
VF
Instantaneous Forward Voltage
TC = 25°C
-
1.8
2.2
V
TC = 125°C
-
1.65
2.0
V
VR = 10 V, IF = 0 A
-
62
-
pF
IF = 1 A, dIF/dt = 100 A/µs, VR = 30 V
IF = 15 A, dIF/dt = 100 A/µs, VR = 30 V
-
25
30
ns
-
35
40
ns
IF = 15 A,
dIF/dt = 200 A/µs,
VR = 390 V, TC = 25°C
-
29.4
-
ns
-
3.5
-
A
-
57
-
nC
IF = 15 A,
dIF/dt = 200 A/µs,
VR = 390 V,
TC = 125°C
-
90
-
ns
-
2.0
-
-
5.0
-
A
-
275
-
nC
ns
IF = 15 A
Dynamic Characteristics
CJ
Junction Capacitance
Switching Characteristics
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Irr
Qrr
Maximum Reverse Recovery Current
Reverse Recovered Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
Irr
Qrr
trr
Maximum Reverse Recovery Current
Reverse Recovery Time
S
Softness Factor (tb/ta)
Irr
Qrr
Maximum Reverse Recovery Current
dIM/dt
Reverse Recovered Charge
Reverse Recovered Charge
IF = 15 A,
dIF/dt = 800 A/µs,
VR = 390 V,
TC = 125°C
Maximum di/dt during tb
-
52
-
-
1.36
-
-
13.5
-
A
-
390
-
nC
-
800
-
A/µs
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
-
-
4.1
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-247
-
-
70
°C/W
©2003 Fairchild Semiconductor Corporation
ISL9R1560PF2 Rev. C1
2
www.fairchildsemi.com
ISL9R1560PF2 — STEALTH™ Diode
Package Marking and Ordering Information
4000
30
175oC
1000
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
25
175oC
150oC
20
25oC
125oC
15
100oC
10
150oC
125oC
100
100oC
75oC
10
1
5
25oC
0
0.5
0.75
1.0
1.25
1.5
1.75
2.0
0.1
100
2.25
200
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
500
600
100
VR = 390V, TJ = 125°C
80
VR = 390V, TJ = 125°C
tb AT IF = 30A, 15A, 7.5A
80
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
400
Figure 2. Reverse Current vs Reverse Voltage
100
60
40
20
60
40
20
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
ta AT IF = 30A, 15A, 7.5A
0
0
5
10
15
20
25
0
200
30
IF, FORWARD CURRENT (A)
400
600
800
1000
1200
1400
1600
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 3. ta and tb Curves vs Forward Current
Figure 4. ta and tb Curves vs dIF/dt
25
16
dIF/dt = 800A/µs
VR = 390V, TJ = 125°C
IRR, MAX REVERSE RECOVERY CURRENT (A)
IRR, MAX REVERSE RECOVERY CURRENT (A)
300
VR , REVERSE VOLTAGE (V)
14
12
dIF/dt = 500A/µs
10
8
dIF/dt = 200A/µs
6
4
2
0
5
10
15
20
25
IF = 30A
20
IF = 15A
15
IF = 7.5A
10
5
0
200
30
IF, FORWARD CURRENT (A)
400
600
800
1000
1200
1400
1600
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
©2003 Fairchild Semiconductor Corporation
ISL9R1560PF2 Rev. C1
VR = 390V, TJ = 125°C
3
Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
www.fairchildsemi.com
ISL9R1560PF2 — STEALTH™ Diode
Typical Performance Curves
QRR, REVERSE RECOVERED CHARGE (nC)
S, REVERSE RECOVERY SOFTNESS FACTOR
700
2.5
VR = 390V, TJ = 125°C
IF = 30A
2.0
IF = 15A
1.5
IF = 7.5A
1.0
0.5
200
400
600
800
1000
1200
1400
VR = 390V, TJ = 125°C
IF = 30A
600
500
IF = 15A
400
IF = 7.5A
300
200
200
1600
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
600
800
1000
1200
1400
1600
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs
dIF/dt
Figure 8. Reverse Recovered Charge vs dIF/dt
1200
16
IF(AV), AVERAGE FORWARD CURRENT (A)
CJ , JUNCTION CAPACITANCE (pF)
400
1000
800
600
400
200
0
0.1
1
10
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
100
TC, CASE TEMPERATURE (oC)
VR , REVERSE VOLTAGE (V)
Figure 9. Junction Capacitance vs Reverse
Voltage
Figure 10. DC Current Derating Curve
2.0
ZθJA, NORMALIZED
THERMAL IMPEDANCE
1.0
0.1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Normalized Maximum Transient Thermal Impedance
©2003 Fairchild Semiconductor Corporation
ISL9R1560PF2 Rev. C1
4
www.fairchildsemi.com
ISL9R1560PF2 — STEALTH™ Diode
Typical Performance Curves (Continued)
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
IF
DUT
RG
CURRENT
SENSE
dIF
trr
dt
ta
tb
0
+
VGE
-
MOSFET
t1
0.25 IRM
VDD
IRM
t2
Figure 12. trr Test Circuit
Figure 13. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
VAVL
R
+
VDD
IL
Q1
VDD
DUT
t0
Figure 14. Avalanche Energy Test Circuit
©2003 Fairchild Semiconductor
Corporation ISL9R1560PF2 Rev. C1
IL
I V
t1
t2
t
Figure 15. Avalanche Current and Voltage
Waveforms
5
www.fairchildsemi.com
ISL9R1560PF2 — STEALTH™ Diode
Test Circuit
and Waveforms
Typical
Performance
Curves (Continued)
ISL9R1560PF2 — STEALTH™ Diode
Mechanical Dimensions
Figure 16. TO-220F 2L - 2LD; TO220; MOLDED; FULL PACK
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-002.
©2003 Fairchild Semiconductor Corporation
ISL9R1560PF2 Rev. C1
6
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2003 Fairchild Semiconductor Corporation
ISL9R1560PF2 Rev. C1
7
www.fairchildsemi.com
ISL9R1560PF2 — STEALTH™ Diode
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