FL77904 - Phase-cut Dimmable Compact LED Direct AC Driver
... 1. ΘJA: Thermal resistance between junction and ambient, dependent on the PCB design, heat sinking, and airflow. The value given is for natural convection with no heatsink using the 1S and 2S2P boards, as specified in JEDEC standards JESD51-2, JESD51-5, and JESD51-7, as appropriate. 2. Junction-to-a ...
... 1. ΘJA: Thermal resistance between junction and ambient, dependent on the PCB design, heat sinking, and airflow. The value given is for natural convection with no heatsink using the 1S and 2S2P boards, as specified in JEDEC standards JESD51-2, JESD51-5, and JESD51-7, as appropriate. 2. Junction-to-a ...
Lecture-2: Diode Applications - Dr. Imtiaz Hussain
... then two diodes back-to-back (i.e. anodes-to-anode or cathode-to-cathode) can form a full-wave rectifier. ...
... then two diodes back-to-back (i.e. anodes-to-anode or cathode-to-cathode) can form a full-wave rectifier. ...
Preliminary Datasheet General Purpose ITVS, 4 I/Os, CI/O
... BCD ITVS (Integrated Transient Voltage Suppression) devices are designed and built using BCD proprietary process technology. These devices integrate the various diodes, transistors and resistors into the BCD ITVS products. These diodes and transistors feature low parasitic resistance and the diodes ...
... BCD ITVS (Integrated Transient Voltage Suppression) devices are designed and built using BCD proprietary process technology. These devices integrate the various diodes, transistors and resistors into the BCD ITVS products. These diodes and transistors feature low parasitic resistance and the diodes ...
Semiconductors
... • When a diode is conducting, its junction temperature is higher than the ambient. • There is less barrier potential at elevated junction temperatures. • The barrier potential decreases by 2 mV for each degree Celsius rise. Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduc ...
... • When a diode is conducting, its junction temperature is higher than the ambient. • There is less barrier potential at elevated junction temperatures. • The barrier potential decreases by 2 mV for each degree Celsius rise. Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduc ...
ppt
... break, electron-hole pairs are created free electrons sweep to n side and holes to p side reverse current is created photocurrent is proportational to intensity of incident light convert light into electric signal applications: CD-ROM, fiber-optic what happens when you don't reverse bias ...
... break, electron-hole pairs are created free electrons sweep to n side and holes to p side reverse current is created photocurrent is proportational to intensity of incident light convert light into electric signal applications: CD-ROM, fiber-optic what happens when you don't reverse bias ...
High negative differential resistance in silicon quantum dot metal
... Metal-insulator-semiconductor structures, comprised of silicon quantum dot films grown by plasma-enhanced chemical vapor deposition, were fabricated on Si wafers. The devices showed a negative differential resistance, as a result of the resonant tunneling and the very high peak-to-valley current rat ...
... Metal-insulator-semiconductor structures, comprised of silicon quantum dot films grown by plasma-enhanced chemical vapor deposition, were fabricated on Si wafers. The devices showed a negative differential resistance, as a result of the resonant tunneling and the very high peak-to-valley current rat ...
NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor August 1996
... These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ...
... These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ...
Chapter 14.pmd
... According to the Bohr atomic model, in an isolated atom the energy of any of its electrons is decided by the orbit in which it revolves. But when the atoms come together to form a solid they are close to each other. So the outer orbits of electrons from neighbouring atoms would come very close or co ...
... According to the Bohr atomic model, in an isolated atom the energy of any of its electrons is decided by the orbit in which it revolves. But when the atoms come together to form a solid they are close to each other. So the outer orbits of electrons from neighbouring atoms would come very close or co ...
Si3402EV: Non-Isolated Evaluation Board for the Si3402
... 3.3 V output standard ESR 1000 µF 6.3 V filter 5 V output standard ESR 1000 µF 6.3 V filter 9 output standard ESR 470 µF 16 V filter 12 V output standard ESR 470 µF 16 V filter 3.3 V output low ESR 560 µF 6.3 V filter 5 V output low ESR 560 µF 6.3 V filter 9 V output low ESR 330 µF 16 V fi ...
... 3.3 V output standard ESR 1000 µF 6.3 V filter 5 V output standard ESR 1000 µF 6.3 V filter 9 output standard ESR 470 µF 16 V filter 12 V output standard ESR 470 µF 16 V filter 3.3 V output low ESR 560 µF 6.3 V filter 5 V output low ESR 560 µF 6.3 V filter 9 V output low ESR 330 µF 16 V fi ...
CDC7630_7631 数据资料DataSheet下载
... suited for use in Microwave Integrated Circuit (MIC) applications where the chip and wire approach is more desirable. Mounted beam-lead diodes can be easily used in MIC, stripline, or other such circuitry. ...
... suited for use in Microwave Integrated Circuit (MIC) applications where the chip and wire approach is more desirable. Mounted beam-lead diodes can be easily used in MIC, stripline, or other such circuitry. ...
AN1115 Single Stage Primary Side Regulation PFC Controller For
... be selected as primary switch and secondary rectifier. Certainly, the efficiency and BOM cost are also the important factors for components selection. ...
... be selected as primary switch and secondary rectifier. Certainly, the efficiency and BOM cost are also the important factors for components selection. ...
Harvesting Wireless Power - IEEE Microwave Theory and
... Diode Rectifier Behavior Diodes are typically modeled according to the nonlinear relationship shown in Figure 2. This I-V curve is characterized by three major regions. For low voltages below the reverse breakdown voltage Vbr , the diode is said to be reverse biased and will conduct in the reverse d ...
... Diode Rectifier Behavior Diodes are typically modeled according to the nonlinear relationship shown in Figure 2. This I-V curve is characterized by three major regions. For low voltages below the reverse breakdown voltage Vbr , the diode is said to be reverse biased and will conduct in the reverse d ...
FR014H5JZ (14mΩ, -30V) High-Side Reverse Bias / Reverse Polarity Protector
... When the DC power source is connected to the circuit (refer to Figure 13), the built-in startup diode initially conducts the current such that the USB device powers up. Due to the initial diode voltage drop, the FR014H5JZ effectively reduces the peak inrush current of a hot plug event. Under these t ...
... When the DC power source is connected to the circuit (refer to Figure 13), the built-in startup diode initially conducts the current such that the USB device powers up. Due to the initial diode voltage drop, the FR014H5JZ effectively reduces the peak inrush current of a hot plug event. Under these t ...
DU36723729
... Accordingly, there is a need to provide an inverter power module that effectively controls and minimizes the effect of the body diode of MOSFETs and specifically, there is a need to provide means to reduce the adverse effects of EMI and the power loss due to the parasitic body diode. The disabling e ...
... Accordingly, there is a need to provide an inverter power module that effectively controls and minimizes the effect of the body diode of MOSFETs and specifically, there is a need to provide means to reduce the adverse effects of EMI and the power loss due to the parasitic body diode. The disabling e ...
Document
... • Thorough DC characterization does not replace full AC characterization but does significantly speed the process of AC characterization and FPA build up – It allows the build up of complex and expensive multidetector FPAs to proceed with high confidence that all CCDs are “healthy” and have necessar ...
... • Thorough DC characterization does not replace full AC characterization but does significantly speed the process of AC characterization and FPA build up – It allows the build up of complex and expensive multidetector FPAs to proceed with high confidence that all CCDs are “healthy” and have necessar ...
Synchronous vs. Aynchronous Buck Regulators - Digi
... A typical asynchronous buck regulator circuit is as shown in the figure above. ‘S’ denotes a MOSFET being used in the top side with a diode ‘D’ in the bottom side. These are the two main switches that control power to the load. When the MOSFET is turned ON, VIN charges the inductor ‘L’, capacitor ‘C ...
... A typical asynchronous buck regulator circuit is as shown in the figure above. ‘S’ denotes a MOSFET being used in the top side with a diode ‘D’ in the bottom side. These are the two main switches that control power to the load. When the MOSFET is turned ON, VIN charges the inductor ‘L’, capacitor ‘C ...
ZXLD1350 30V 350mA LED DRIVER with AEC-Q100 Description
... Operation can be best understood by assuming that the ADJ pin of the device is unconnected and the voltage on this pin (VADJ) appears directly at the (+) input of the comparator. When input voltage VIN is first applied, the initial current in L1 and RS is zero and there is no output from the current ...
... Operation can be best understood by assuming that the ADJ pin of the device is unconnected and the voltage on this pin (VADJ) appears directly at the (+) input of the comparator. When input voltage VIN is first applied, the initial current in L1 and RS is zero and there is no output from the current ...
Adding Protection When Switching Inductive Loads
... IMPORTANT: In Figure 3B, the charged inductor is left open when the switch is opened (not recommended). This means that the reverse voltage spike developed across the inductor will go as high as necessary to cause the open coil energy to arc or flash-over in the circuit. This high reverse voltage sp ...
... IMPORTANT: In Figure 3B, the charged inductor is left open when the switch is opened (not recommended). This means that the reverse voltage spike developed across the inductor will go as high as necessary to cause the open coil energy to arc or flash-over in the circuit. This high reverse voltage sp ...
US6M2 - Rohm
... No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Up ...
... No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Up ...
AP65550 Description Pin Assignments
... turned off after internal one shot timer expires. This one shot is set by the converter input voltage(VIN), and the output voltage(VOUT) to maintain a pseudo-fixed frequency over the input voltage range, hence it is called adaptive on-time control. The output voltage variation is sensed by FB voltag ...
... turned off after internal one shot timer expires. This one shot is set by the converter input voltage(VIN), and the output voltage(VOUT) to maintain a pseudo-fixed frequency over the input voltage range, hence it is called adaptive on-time control. The output voltage variation is sensed by FB voltag ...
AL8807A Description Pin Assignments
... AL8807A Operation The AL8807A is a hysteretic LED current switching regulator sometimes known as an equal ripple switching regulator. In normal operation, when voltage is applied at +VIN (See Figure 31), the AL8807A internal switch is turned on. Current starts to flow through sense resistor R1, indu ...
... AL8807A Operation The AL8807A is a hysteretic LED current switching regulator sometimes known as an equal ripple switching regulator. In normal operation, when voltage is applied at +VIN (See Figure 31), the AL8807A internal switch is turned on. Current starts to flow through sense resistor R1, indu ...
Inventor - Hobbielektronika
... 12 equally. This limits the amount of energy that can be stored to the amount which can be discharged during the shortest period ofthe operating cycle. FIG. 1b illustrates that this limitation can be overcome by adding a diode 14 through which the capacitor charges. Thus, the capacitor can have a sm ...
... 12 equally. This limits the amount of energy that can be stored to the amount which can be discharged during the shortest period ofthe operating cycle. FIG. 1b illustrates that this limitation can be overcome by adding a diode 14 through which the capacitor charges. Thus, the capacitor can have a sm ...
Diode
In electronics, a diode is a two-terminal electronic component that conducts primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance to the flow of current in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. A vacuum tube diode has two electrodes, a plate (anode) and a heated cathode. Semiconductor diodes were the first semiconductor electronic devices. The discovery of crystals' rectifying abilities was made by German physicist Ferdinand Braun in 1874. The first semiconductor diodes, called cat's whisker diodes, developed around 1906, were made of mineral crystals such as galena. Today, most diodes are made of silicon, but other semiconductors such as selenium or germanium are sometimes used.