AN10393 BISS transistors and MEGA Schottky rectifiers
... Users can operate the BISS transistor at a higher ambient temperature without exceeding the maximum allowable die temperature of 150 °C, or they can benefit from the lower heat generation on the board. The lower power dissipation of the transistor also helps extend the operating time of battery-powe ...
... Users can operate the BISS transistor at a higher ambient temperature without exceeding the maximum allowable die temperature of 150 °C, or they can benefit from the lower heat generation on the board. The lower power dissipation of the transistor also helps extend the operating time of battery-powe ...
IEC 61000-4-x - AN96-07
... incoming transient to a low enough level as not to cause damage to the protected semiconductor. Al- ...
... incoming transient to a low enough level as not to cause damage to the protected semiconductor. Al- ...
ZXLD1350Q Description Pin Assignments Features Typical
... Operation can be best understood by assuming that the ADJ pin of the device is unconnected and the voltage on this pin (V ADJ) appears directly at the (+) input of the comparator. When input voltage VIN is first applied, the initial current in L1 and RS is zero and there is no output from the curren ...
... Operation can be best understood by assuming that the ADJ pin of the device is unconnected and the voltage on this pin (V ADJ) appears directly at the (+) input of the comparator. When input voltage VIN is first applied, the initial current in L1 and RS is zero and there is no output from the curren ...
Principles of Electronic Communication Systems
... (TEDs), are not diodes in the usual sense because they do not have junctions. A Gunn diode is a thin piece of N-type gallium arsenide (GaAs) or indium phosphide (InP) semiconductor which forms a special resistor when voltage is applied to it. The Gunn diode exhibits a negative-resistance characteris ...
... (TEDs), are not diodes in the usual sense because they do not have junctions. A Gunn diode is a thin piece of N-type gallium arsenide (GaAs) or indium phosphide (InP) semiconductor which forms a special resistor when voltage is applied to it. The Gunn diode exhibits a negative-resistance characteris ...
ZXCL SERIES Micropower SC70-5 & SOT23-5 low dropout regulators
... Note2:Output voltage will start to rise when VIN exceeds a value or approximately 1.3V. For normal operation, VIN(min) > VOUT(nom) + 0.5V. Note3:Dropout voltage is defined as the difference between VIN and VO, when VO has dropped 100mV below its nominal value. Nominal value of VO is defined at VIN=V ...
... Note2:Output voltage will start to rise when VIN exceeds a value or approximately 1.3V. For normal operation, VIN(min) > VOUT(nom) + 0.5V. Note3:Dropout voltage is defined as the difference between VIN and VO, when VO has dropped 100mV below its nominal value. Nominal value of VO is defined at VIN=V ...
AN1645 - STMicroelectronics
... Figure 8 shows the turn-off circuit when using a diode and pull-up resistor to synchronize the STSR2P, the same configuration of Q1 and R2 can be used with a resistor divider circuit. 5.2 Discontinuous Conduction Mode As shown in figure 4, in discontinuous mode operation there can be some problems i ...
... Figure 8 shows the turn-off circuit when using a diode and pull-up resistor to synchronize the STSR2P, the same configuration of Q1 and R2 can be used with a resistor divider circuit. 5.2 Discontinuous Conduction Mode As shown in figure 4, in discontinuous mode operation there can be some problems i ...
RURG3060 30 A, 600 V, Ultrafast Diode Features Description
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perform ...
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perform ...
RUR1S1560S 15 A, 600 V, Ultrafast Diode Features
... THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY ...
... THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY ...
Microwave Devices Faculty of Engineering EMF2026 MULTIMEDIA
... Gunn diode is a type of Transferred Electron Device (TED). Material like GaAs exhibit negative differential mobility (i.e. decrease in carrier velocity with an increase in electric field) when bias voltage is above a threshold level. This gives rise to negative resistance characteristic of the Gunn ...
... Gunn diode is a type of Transferred Electron Device (TED). Material like GaAs exhibit negative differential mobility (i.e. decrease in carrier velocity with an increase in electric field) when bias voltage is above a threshold level. This gives rise to negative resistance characteristic of the Gunn ...
STN3N45K3
... The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an ...
... The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an ...
Si3402-C - Silicon Labs
... The hotswap interface of the Si3402 provides the complete front end of an IEEE 802.3-compliant PD. The Si3402 also includes two full diode bridges, a transient voltage surge suppressor, detection circuit, classification current source, and dual-level hotswap current limiting switch. This high level ...
... The hotswap interface of the Si3402 provides the complete front end of an IEEE 802.3-compliant PD. The Si3402 also includes two full diode bridges, a transient voltage surge suppressor, detection circuit, classification current source, and dual-level hotswap current limiting switch. This high level ...
The Picaxe Hatchet Board
... IR Remote Controller Multi-Purpose Timer Multi-Setpoint Temperature Controller Remote Voltage Monitor These 6 basic applications are provided as examples for what you can do with the Hatchet board. Use the programs as-is or modify away. If you come up with a neat application that you would like to s ...
... IR Remote Controller Multi-Purpose Timer Multi-Setpoint Temperature Controller Remote Voltage Monitor These 6 basic applications are provided as examples for what you can do with the Hatchet board. Use the programs as-is or modify away. If you come up with a neat application that you would like to s ...
PAM8303C Description Pin Assignments
... 1µF, is placed as close as possible to the device each VDD and PVDD pin for the best operation. For filtering lower frequency noise signals, a large ceramic capacitor of 10µF or greater placed near the audio power amplifier is recommended. ...
... 1µF, is placed as close as possible to the device each VDD and PVDD pin for the best operation. For filtering lower frequency noise signals, a large ceramic capacitor of 10µF or greater placed near the audio power amplifier is recommended. ...
Simulation
... Label things clearly and use sensible labels for your co-workers Show your ideas to others and get their feedback ...
... Label things clearly and use sensible labels for your co-workers Show your ideas to others and get their feedback ...
ZXLD1350 30V 350mA LED DRIVER with AEC
... Operation can be best understood by assuming that the ADJ pin of the device is unconnected and the voltage on this pin (VADJ) appears directly at the (+) input of the comparator. When input voltage VIN is first applied, the initial current in L1 and RS is zero and there is no output from the current ...
... Operation can be best understood by assuming that the ADJ pin of the device is unconnected and the voltage on this pin (VADJ) appears directly at the (+) input of the comparator. When input voltage VIN is first applied, the initial current in L1 and RS is zero and there is no output from the current ...
7 – The Power MOSFET 1
... The total conduction (on-state) power loss for a given MOSFET with forward current ID and onresistance RDS(on) is given by, The value of RDS(on) can be significant and it varies between tens of milliohms and a few ohms for low-voltage and high-voltage MOSFETS, respectively. The on-state resistance i ...
... The total conduction (on-state) power loss for a given MOSFET with forward current ID and onresistance RDS(on) is given by, The value of RDS(on) can be significant and it varies between tens of milliohms and a few ohms for low-voltage and high-voltage MOSFETS, respectively. The on-state resistance i ...
Calculating Power Losses in an IGBT Module
... The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discha ...
... The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discha ...
Miniature 0402 Surface Mount Technology Packaged RF Diodes
... from the P and the N layers are forced into the I layer, which reduces its RF impedance. When a reverse bias voltage is applied across the PIN diodes, all free charge carriers are removed from the I layer, thereby causing its RF impedance to increase. This variable RF impedance versus DC, or low fre ...
... from the P and the N layers are forced into the I layer, which reduces its RF impedance. When a reverse bias voltage is applied across the PIN diodes, all free charge carriers are removed from the I layer, thereby causing its RF impedance to increase. This variable RF impedance versus DC, or low fre ...
ACD-10 Pro and ACD-10 TRMS Pro Product Manual
... impedance) like fuses to protect the user and the instrument. Most measuring functions through this terminal will then be open circuit. The series fusible resistors and the spark gaps should then be replaced by qualified technician. Refer to the LIMITED WARRANTY section for obtaining warranty or rep ...
... impedance) like fuses to protect the user and the instrument. Most measuring functions through this terminal will then be open circuit. The series fusible resistors and the spark gaps should then be replaced by qualified technician. Refer to the LIMITED WARRANTY section for obtaining warranty or rep ...
Flash Core Voltage Supply
... current-carrying capacity and are considerably faster. They very quickly become conductive above a defined breakdown voltage and hence short-circuit the overvoltage. However, their current-carrying capacity is not very high. On the other hand, they exhibit an extremely fast response time, in the pic ...
... current-carrying capacity and are considerably faster. They very quickly become conductive above a defined breakdown voltage and hence short-circuit the overvoltage. However, their current-carrying capacity is not very high. On the other hand, they exhibit an extremely fast response time, in the pic ...
Corporate Presentation - Central Semiconductor
... Outstanding commitment to quality Central is dedicated to manufacturing products of outstanding quality with superior performance and reliability. ...
... Outstanding commitment to quality Central is dedicated to manufacturing products of outstanding quality with superior performance and reliability. ...
AP3154A - Diodes Incorporated
... In applications, only four external components are required: two 1µF ceramic flying capacitors (C1 and C2), one 1µF ceramic capacitor each for input and output (CIN, COUT). AP3154A drives up to four white LEDs with a maximum current of 30mA each. A total of 120mA is provided to the four channels. Th ...
... In applications, only four external components are required: two 1µF ceramic flying capacitors (C1 and C2), one 1µF ceramic capacitor each for input and output (CIN, COUT). AP3154A drives up to four white LEDs with a maximum current of 30mA each. A total of 120mA is provided to the four channels. Th ...
Diode
In electronics, a diode is a two-terminal electronic component that conducts primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance to the flow of current in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. A vacuum tube diode has two electrodes, a plate (anode) and a heated cathode. Semiconductor diodes were the first semiconductor electronic devices. The discovery of crystals' rectifying abilities was made by German physicist Ferdinand Braun in 1874. The first semiconductor diodes, called cat's whisker diodes, developed around 1906, were made of mineral crystals such as galena. Today, most diodes are made of silicon, but other semiconductors such as selenium or germanium are sometimes used.