FFH60UP60S, FFH60UP60S3 60 A, 600 V Ultrafast Rectifier FFH60UP60S, F F
... Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. ...
... Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. ...
FDS6984AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET
... Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. ...
... Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. ...
Using Temperature-Sensing Diodes with Remote
... sensors that accurately measure CPU and GPU temperatures, as well as the temperatures of discrete diodes, e.g., 2N3904, 2N3906. Most of these devices include an internal sensor and can measure one or more external sensors. This application note describes how to maintain accuracy when diodes are used ...
... sensors that accurately measure CPU and GPU temperatures, as well as the temperatures of discrete diodes, e.g., 2N3904, 2N3906. Most of these devices include an internal sensor and can measure one or more external sensors. This application note describes how to maintain accuracy when diodes are used ...
99% Efficiency True-Bridgeless Totem-Pole PFC
... Abstract: This paper presents a true bridgeless totem-pole Power-Factor-Correction (PFC) circuit using GaN HEMT. Enabled by a diode-free GaN power HEMT bridge with low reverse-recovery charge, very-high-efficiency single-phase AC-DC conversion is realized using a totem-pole topology without the limi ...
... Abstract: This paper presents a true bridgeless totem-pole Power-Factor-Correction (PFC) circuit using GaN HEMT. Enabled by a diode-free GaN power HEMT bridge with low reverse-recovery charge, very-high-efficiency single-phase AC-DC conversion is realized using a totem-pole topology without the limi ...
SiC-Diodes, SiC-MOSFETs and Gate Driver IC
... makes them a perfect suitable to switch fast SiC devices. BM6105FW for example is pin-to-pin compatible to competitors solution. The drivers are originally designed for high side but since some customers are using negative VGS an isolated gate driver on the low side is useful as well. Cost, Reliabil ...
... makes them a perfect suitable to switch fast SiC devices. BM6105FW for example is pin-to-pin compatible to competitors solution. The drivers are originally designed for high side but since some customers are using negative VGS an isolated gate driver on the low side is useful as well. Cost, Reliabil ...
Fundamentals of Linear Electronics Integrated & Discrete
... SCRs SCR Motor Control • A major application of SCRs is to control DC motors. • SCRs, like all thyristors, need to be “commutated”, meaning interrupting the flow of current. • An SCR motor control typically uses a full-wave rectifier without filtering the DC. • When the pulsating DC goes to zero, t ...
... SCRs SCR Motor Control • A major application of SCRs is to control DC motors. • SCRs, like all thyristors, need to be “commutated”, meaning interrupting the flow of current. • An SCR motor control typically uses a full-wave rectifier without filtering the DC. • When the pulsating DC goes to zero, t ...
The Complete Westcode Guide to Assemblies - H
... Testing uncompressed devices can result in an apparent ‘open circuit’ effect, or risk internal arcing which could case irreparable damage. The use of electronic multimeters, on the resistance scale, can only confuse. A power semiconductor is a non-linear resistor. At the low voltages common to these ...
... Testing uncompressed devices can result in an apparent ‘open circuit’ effect, or risk internal arcing which could case irreparable damage. The use of electronic multimeters, on the resistance scale, can only confuse. A power semiconductor is a non-linear resistor. At the low voltages common to these ...
STD4NK100Z
... The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an ...
... The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an ...
R15_II_I EEE
... Design and analyze basic transistor amplifier circuits using BJT and FET. UNIT- I Junction Diode Characteristics : Open circuited p-njunction, Biased p-n junction,p-n junction diode, current components in PN junction Diode, diode equation,V-I Characteristics, temperature dependence on V-I characte ...
... Design and analyze basic transistor amplifier circuits using BJT and FET. UNIT- I Junction Diode Characteristics : Open circuited p-njunction, Biased p-n junction,p-n junction diode, current components in PN junction Diode, diode equation,V-I Characteristics, temperature dependence on V-I characte ...
Current Source Inverter
... control of ac, specially induction, motors subject to variation in load torque. In recent years, self-commutated power switching devices, such as power transistors etc., are being used in VSI, but not costly inverter-grade thyristors (having low turn-off time), along with bulky commutation circuits. ...
... control of ac, specially induction, motors subject to variation in load torque. In recent years, self-commutated power switching devices, such as power transistors etc., are being used in VSI, but not costly inverter-grade thyristors (having low turn-off time), along with bulky commutation circuits. ...
Driving LEDs with a PIC Microcontroller
... through the resistor, and thus the current through the diode can be determined. The voltage measurement is carried out by the A/D module of the PIC, in which voltages up to 5V can be compared to a constant reference voltage. The A/D module should not be directly connected across the series resistor ...
... through the resistor, and thus the current through the diode can be determined. The voltage measurement is carried out by the A/D module of the PIC, in which voltages up to 5V can be compared to a constant reference voltage. The A/D module should not be directly connected across the series resistor ...
Making Accurate Temperature Measurements with Devices with
... convenient. Measurements are independent of reverse saturation current and series resistance. Errors introduced by interfacing with devices of different ideality factors, while often negligible, can be precisely calibrated, allowing use of temperature monitors with a wide variety of diode temperatur ...
... convenient. Measurements are independent of reverse saturation current and series resistance. Errors introduced by interfacing with devices of different ideality factors, while often negligible, can be precisely calibrated, allowing use of temperature monitors with a wide variety of diode temperatur ...
FR011L5J (11mΩ, -30V) Low-Side Reverse Bias / Reverse Polarity
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
BAT54S Datasheet
... Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and d ...
... Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and d ...
W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz Robinson, S. Wagner, J. C. Sturm, and N. Verma, "A Complete Fully Thin-film PV Harvesting and Power-management System on Plastic with On-sheet Battery Management and Wireles Power Delivery to Off-sheet Loads", IEEE Photovoltaic Spec. Conf. (PVSC), Paper 68, Tampa, Fl (JUN 2013).
... nominal output voltage Vbattery of 15.6 V. This value is chosen to satisfy the voltage-level requirements in typical thin-film circuits. The diode stack Do ensures proper charging conditions for the batteries, while the TFT circuit (M 1–M9) is used to ensure proper discharging conditions during load ...
... nominal output voltage Vbattery of 15.6 V. This value is chosen to satisfy the voltage-level requirements in typical thin-film circuits. The diode stack Do ensures proper charging conditions for the batteries, while the TFT circuit (M 1–M9) is used to ensure proper discharging conditions during load ...
FR011L5J (11mΩ, -30V) Low-Side Reverse Bias / Reverse Polarity Protector FR011L
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
Datasheet - Mouser Electronics
... The RURD660, RURD660S is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial ap ...
... The RURD660, RURD660S is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial ap ...
An Improved State Space Average Model of Buck DC
... In these converters, the switching capabilities of power devices are utilized to achieve the high efficiency. The non ideal nature of switches and their conduction mode resistance, and because the voltage and current can not suddenly become zero in switching times, there is some power loss on them. ...
... In these converters, the switching capabilities of power devices are utilized to achieve the high efficiency. The non ideal nature of switches and their conduction mode resistance, and because the voltage and current can not suddenly become zero in switching times, there is some power loss on them. ...
Diode
In electronics, a diode is a two-terminal electronic component that conducts primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance to the flow of current in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. A vacuum tube diode has two electrodes, a plate (anode) and a heated cathode. Semiconductor diodes were the first semiconductor electronic devices. The discovery of crystals' rectifying abilities was made by German physicist Ferdinand Braun in 1874. The first semiconductor diodes, called cat's whisker diodes, developed around 1906, were made of mineral crystals such as galena. Today, most diodes are made of silicon, but other semiconductors such as selenium or germanium are sometimes used.