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RURD660, RURD660S
November 2013
Data Sheet
6 A, 600 V, Ultrafast Diode
Features
The RURD660, RURD660S is an ultrafast diode with low
forward voltage drop. This device is intended for use as
freewheeling and clamping diodes in a variety of switching
power supplies and other power switching applications. It
is specially suited for use in switching power supplies and
industrial application.
• Max Forward Voltage, VF = 1.5 V (@ TC = 25°C)
• Ultrafast Recovery trr = 60 ns (@ IF = 6 A)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
Ordering Information
PART NUMBER
• General Purpose
PACKAGE
BRAND
RURD660
TO-251-2L
RUR660
RURD660S
TO-252-3L
RUR660
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in the tape and reel, i.e., RURD660S9A.
CATHODE
Symbol
K
JEDEC STYLE TO-252
CATHODE
(FLANGE)
A
Absolute Maximum Ratings
CATHODE
ANODE
TC = 25oC, Unless Otherwise Specified
RURD660
RURD660S
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 155oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60 Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Maximum Lead Temperature for Soldering
Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG
©2001 Fairchild Semiconductor Corporation
RURD660, RURD660S Rev. C1
1
600
600
600
6
UNIT
V
V
V
A
12
A
60
A
50
10
-65 to 175
W
mJ
oC
300
260
oC
oC
www.fairchildsemi.com
RURD660, RURD660S
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
SYMBOL
MIN
TYP
MAX
IF = 6 A
-
-
1.5
V
IF = 6 A, TC = 150oC
-
-
1.2
V
VR = 600 V
-
-
100
µA
VR = 600 V, TC = 150oC
-
-
500
µA
IF = 1 A, dIF/dt = 200 A/µs
-
-
55
ns
IF = 6 A, dIF/dt = 200 A/µs
-
-
60
ns
ta
IF = 6 A, dIF/dt = 200 A/µs
-
28
-
ns
tb
IF = 6 A, dIF/dt = 200 A/µs
-
16
-
ns
QRR
IF = 6 A, dIF/dt = 200 A/µs
-
150
-
nC
VR = 10 V, IF = 0 A
-
25
-
pF
-
-
3
oC/W
VF
IR
trr
CJ
TEST CONDITION
RθJC
UNIT
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300 µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
500
IR , REVERSE CURRENT (µA)
IF , FORWARD CURRENT (A)
30
10
100oC
25oC
175oC
1
0.5
0
0.5
1
1.5
2
10
100oC
1
0.1
25oC
0.01
0.001
2.5
0
100
200
300
400
500
600
VR , REVERSE VOLTAGE (V)
VF , FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
©2001 Fairchild Semiconductor Corporation
RURD660, RURD660S Rev. C1
175oC
100
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
www.fairchildsemi.com
RURD660, RURD660S
Typical Performance Curves
(Continued)
90
50
TC = 100oC, dIF/dt = 200A/µs
75
40
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
TC = 25oC, dIF/dt = 200A/µs
trr
30
ta
20
tb
10
trr
45
ta
30
tb
15
0
0.5
1
IF , FORWARD CURRENT (A)
0
0.5
6
FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT
IF(AV) , AVERAGE FORWARD CURRENT (A)
TC = 175oC, dIF/dt = 200A/µs
80
trr
60
40
ta
tb
20
0
0.5
1
IF , FORWARD CURRENT (A)
1
IF , FORWARD CURRENT (A)
6
FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT
100
t, RECOVERY TIMES (ns)
60
6
6
5
DC
4
SQ. WAVE
3
2
1
0
145
150
155
160
165
170
175
TC , CASE TEMPERATURE (oC)
FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
CJ , JUNCTION CAPACITANCE (pF)
75
60
45
30
15
0
0
50
100
150
200
VR , REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
RURD660, RURD660S Rev. C1
3
www.fairchildsemi.com
RURD660, RURD660S
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
DUT
CURRENT
SENSE
RG
IF
+
VGE
-
IGBT
t1
dIF
trr
dt
ta
tb
0
VDD
0.25 IRM
t2
IRM
FIGURE 8. trr TEST CIRCUIT
FIGURE 9. trr WAVEFORMS AND DEFINITIONS
I = 1A
L = 20mH
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
VAVL
L
CURRENT
SENSE
R
+
VDD
IL
IL
I V
Q1
VDD
DUT
t0
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
RURD660, RURD660S Rev. C1
t1
t2
t
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
4
www.fairchildsemi.com
RURD660, RURD660S — Ultrafast Diode
Mechanical Dimensions
Figure 9. TO-252 3L (DPAK) - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
https://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-0A3.
©2001 Fairchild Semiconductor Corporation
RURD660, RURD660S Rev. C1
5
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2001 Fairchild Semiconductor Corporation
RURD660, RURD660S Rev. C1
6
www.fairchildsemi.com
RURD660, RURD660S — Ultrafast Diode
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