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Transcript
PCR8P75M Rectifier Diode Chip 700V, 75A, VF 1.9V, trr = 78ns Part VRRM IF(AV)n VF Typ trr Typ Die Size PCR8P75M 700V 75A 1.9V 78ns 5.3 x 5.3 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • General Purpose • trr Max = 112s @ IF = 75A • Free Wheeling Diode • 700V Reverse Voltage & High Reliability • Operating Temperature TJ = 150°C Maximum Ratings Symbol Parameter Ratings Units VRRM Peak Repetitive Reverse Voltage 700 V VRWM Working Peak Reverse Voltage 700 V VR DC Blocking Voltage 700 V IF(AV) Average Rectified Forward Current @ TC = 100°C 75 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 150 A TJ, TSTG Operation Junction & Storage Temperature -65 to 150 °C 1 Electrical Characteristics, TJ = 25° unless otherwise noted Parameter Test Conditions VF Forward Voltage IR Reverse Current trr Reverse Recovery Time 2 IF = 75A 2 VR = 700V 3 3 Irr Reverse Recovery Current IF =75A, dI/dt =150A/µs 3 Qrr Reverse Recovery Charge 1. 2. 3. Min Typ Max Units TC = 25°C - 1.9 2.8 V TC = 100°C - 1.8 - V TC = 25°C - - 100 µA TC = 25°C - 78 - ns TC = 100°C - 156 - TC = 25°C - 5.7 - TC = 100°C - 10 - TC = 25°C - 222 - TC = 100°C - 780 - A nC Notes: Performance will vary based on assembly technique and substrate choice Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Specified in package, not subject to 100% production test at wafer level Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 Symbol Ordering Guide Part Number Format Detail / Drawing PCR8P75MMW Un-sawn wafer, electrical rejects inked Page 2 PCR8P75MMF Sawn wafer on film-frame Page 3 PCR8P75MMD Singulated die / chips in waffle pack Page 3 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Die Drawing – Dimensions in µm 5300 40 4400 4400 Passivated area 5300 ANODE Chip backside is CATHODE Mechanical Data Parameter Units Chip Dimensions Un-sawn 5300 x 5300 µm Chip Thickness (Nominal) 250 µm Anode Pad Size 4400 x 4400 µm Wafer Diameter 127 (subject to change) mm 80 (subject to change) µm Saw Street Wafer orientation on frame Wafer notch parallel with frame flat Topside Metallisation & Thickness Al Backside Metallisation & Thickness V/Ni/Ag 6 µm 0.3 µm Topside Passivation Silicon Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Al 380µm X4 Page2 Recommended Wire Bond - Anode Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 5.82mm ±0.13mm pocket size Y = 5.82mm ±0.13mm pocket size Z = 0.81mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 6 X 6 (36) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page3 1. Life support devices or systems are devices or systems which,