transformer regulated brushless generator
... The generator voltage is adjusted at the factory to a specified speed; however, it is advisable to verify upon installation. To supply 60 HZ, the speed should be 1800 to 1860 RPM at no load and should not fall below 1800 RPM by more than one percent at full load. To supply 50 HZ, the speed should be ...
... The generator voltage is adjusted at the factory to a specified speed; however, it is advisable to verify upon installation. To supply 60 HZ, the speed should be 1800 to 1860 RPM at no load and should not fall below 1800 RPM by more than one percent at full load. To supply 50 HZ, the speed should be ...
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... the manufacturing process that left ion impurities in the vicinity of the silicon junction, degrading device performance. The second type of fault was determined to be defective parts or materials or their joint parts of the device. The largest area of application for large power thyristors and diod ...
... the manufacturing process that left ion impurities in the vicinity of the silicon junction, degrading device performance. The second type of fault was determined to be defective parts or materials or their joint parts of the device. The largest area of application for large power thyristors and diod ...
DATA SHEET BZA420A Quadruple ESD transient voltage suppressor
... Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). ...
... Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
... The first VCSEL was proposed in 1979 by Soda, Iga, Kitahara and Suematsu, but practically devices for CW operation at room temperature were not reported until 1988. The first semiconductor VCSEL was invented by Axel Scherer and Jack Jewell, two scientists at the AT and T Bell Laboratories. Today, VC ...
... The first VCSEL was proposed in 1979 by Soda, Iga, Kitahara and Suematsu, but practically devices for CW operation at room temperature were not reported until 1988. The first semiconductor VCSEL was invented by Axel Scherer and Jack Jewell, two scientists at the AT and T Bell Laboratories. Today, VC ...
BDTIC
... Near Field Communication or NFC, is a short-range high frequency wireless communication technology which enables the exchange of data between devices over about a 10…20 centimeter distance. The technology is a simple extension of the ISO/IEC 14443 proximity-card standard (proximity card, RFID) that ...
... Near Field Communication or NFC, is a short-range high frequency wireless communication technology which enables the exchange of data between devices over about a 10…20 centimeter distance. The technology is a simple extension of the ISO/IEC 14443 proximity-card standard (proximity card, RFID) that ...
Ion Pumps - Ideal Vacuum Products, LLC
... They do not however, have good efficiency for noble gases such as argon (Ar), helium (He), or methane (CH4). The titanium cathode has a high solubility for hydrogen (H2) so even though it does not react like other gases with the sputtered cathode material it easily gets embedded in it and covered by ...
... They do not however, have good efficiency for noble gases such as argon (Ar), helium (He), or methane (CH4). The titanium cathode has a high solubility for hydrogen (H2) so even though it does not react like other gases with the sputtered cathode material it easily gets embedded in it and covered by ...
IDEAL SWITCH
... The thyristor device turns on when the anode-cathode Vak voltage is greater than Vf and a positive pulse signal is applied at the gate input (g > 0). The pulse height must be greater than 0 and last long enough to allow the thyristor anode current to become larger than the latching current Il. The t ...
... The thyristor device turns on when the anode-cathode Vak voltage is greater than Vf and a positive pulse signal is applied at the gate input (g > 0). The pulse height must be greater than 0 and last long enough to allow the thyristor anode current to become larger than the latching current Il. The t ...
MDB10SV 1.2 A, 1000 V, Micro-DIP, Single-Phase Bridge Rectifier , Micro-
... MDB10SV — 1.2 A, 1000 V, Micro-DIP, Single-Phase Bridge Rectifier ...
... MDB10SV — 1.2 A, 1000 V, Micro-DIP, Single-Phase Bridge Rectifier ...
ZXBM5210 Description Pin Assignments
... only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time 6. The absolute maximum supply voltage of 24V is ...
... only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time 6. The absolute maximum supply voltage of 24V is ...
Electron emission from lead–zirconate–titanate ceramics
... The results and the theoretical model summarized in this section were reported in detail in Refs. 2 and 6. The system consists of a planar diode with a ferroelectric ceramic cathode. The ferroelectric disk has two electrodes, the front electrode, facing the A – K gap, is gridded and is held at groun ...
... The results and the theoretical model summarized in this section were reported in detail in Refs. 2 and 6. The system consists of a planar diode with a ferroelectric ceramic cathode. The ferroelectric disk has two electrodes, the front electrode, facing the A – K gap, is gridded and is held at groun ...
Semiconductor Lore
... beauty at its finest… here viewed from the top this set being based around the ‘Wadley-Loop’ principle when in high-stability mode, and the level of sophistication, elegance of its circuit design and modular construction represented some of the best professional receiver design of that era. Performa ...
... beauty at its finest… here viewed from the top this set being based around the ‘Wadley-Loop’ principle when in high-stability mode, and the level of sophistication, elegance of its circuit design and modular construction represented some of the best professional receiver design of that era. Performa ...
Technical Article 650V TRENCHSTOP 5
... combination with Infineon’s further advancement of thin wafer technology, a dramatic reduction in both turn-off and turn-on losses in hard switching applications, along with a low Vce(sat) value provide an IGBT that can achieve a considerable improvement in the highlighted PFC topology above. Furthe ...
... combination with Infineon’s further advancement of thin wafer technology, a dramatic reduction in both turn-off and turn-on losses in hard switching applications, along with a low Vce(sat) value provide an IGBT that can achieve a considerable improvement in the highlighted PFC topology above. Furthe ...
LM74670-Q1 Zero IQ Smart Diode Rectifier
... diodes in a bridge rectifier application. The LM74670-Q1 is designed to control a single N-Channel MOSFET in a full or half bridge rectifier as replacement for diode. In a full bridge rectifier, each diode can be replaced by the LM74670-Q1 and a MOSFET. Diodes used in bridge rectifiers cause high po ...
... diodes in a bridge rectifier application. The LM74670-Q1 is designed to control a single N-Channel MOSFET in a full or half bridge rectifier as replacement for diode. In a full bridge rectifier, each diode can be replaced by the LM74670-Q1 and a MOSFET. Diodes used in bridge rectifiers cause high po ...
1.5MHz, 1A, STEP DOWN DC-DC CONVERTER ... Data Sheet Features
... 5.1 The VIN quiescent current loss comprises two parts: the DC bias current as given in the electrical characteristics and the internal MOSFET switch gate charge currents. The gate charge current results from switching the gate capacitance of the internal power MOSFET switches. Each cycle the gate i ...
... 5.1 The VIN quiescent current loss comprises two parts: the DC bias current as given in the electrical characteristics and the internal MOSFET switch gate charge currents. The gate charge current results from switching the gate capacitance of the internal power MOSFET switches. Each cycle the gate i ...
ZXLD1360 Description Pin Assignments Features Typical
... Operation can be best understood by assuming that the ADJ pin of the device is unconnected and the voltage on this pin (VADJ) appears directly at the (+) input of the comparator. When input voltage VIN is first applied, the initial current in L1 and RS is zero and there is no output from the current ...
... Operation can be best understood by assuming that the ADJ pin of the device is unconnected and the voltage on this pin (VADJ) appears directly at the (+) input of the comparator. When input voltage VIN is first applied, the initial current in L1 and RS is zero and there is no output from the current ...
R.M.A. Dawson, M.H. Lu, J.C. Sturm et al, "Impact of transient response of organic light emitting diodes on the design of active matrix OLED displays," Tech. Dig. Int. Elec. Dev. Mtg., pp. 875-878 (1998).
... voltage source, so it does not significantly affect the voltage level across the diode. This implies that when the OLED is first tumed on, a large current flows to charge the parallel capacitance. The traps in the hole and electron transport materials are then filled by the constant current associat ...
... voltage source, so it does not significantly affect the voltage level across the diode. This implies that when the OLED is first tumed on, a large current flows to charge the parallel capacitance. The traps in the hole and electron transport materials are then filled by the constant current associat ...
DATA SHEET BZA900A-series Quadruple ESD transient voltage suppressor
... Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA900A is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further add to the clamping voltage (V = L di/dt) the series c ...
... Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA900A is determined by the peak transient current and the rate of rise of that current (di/dt). Since parasitic inductances can further add to the clamping voltage (V = L di/dt) the series c ...
Good Practice for the NCP1602 CSZCD Pin Design and PCB Layout
... consumption current by increasing (above 1 MW) the resistance (RCS1 + RCS2 ) of the CSZCD bridge connected between the drain and the source of the power MOSFET (see Figure 1), the sensitivity of the CSZCD pin to PCB parasitic capacitors is increased. In some case, it can lead to non-functionality ca ...
... consumption current by increasing (above 1 MW) the resistance (RCS1 + RCS2 ) of the CSZCD bridge connected between the drain and the source of the power MOSFET (see Figure 1), the sensitivity of the CSZCD pin to PCB parasitic capacitors is increased. In some case, it can lead to non-functionality ca ...
FDS6982AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET
... TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 ...
... TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 ...
AN-7513 Parallel Operation Of Semiconductor Switches
... The on-state is again a relatively uncritical and uneventful period (Figure 2). Most devices in switching applications are overdriven and differences in gain or transconductance do not translate into proportional output current. ...
... The on-state is again a relatively uncritical and uneventful period (Figure 2). Most devices in switching applications are overdriven and differences in gain or transconductance do not translate into proportional output current. ...
AM4964 Description A Product Line of
... CT pin provides the timing for the Locked Rotor monitor. In normal operation, Lock Detect is enabled. If the Hall signal does not change (i.e. a rotor lock condition) within the Lock Detect time (tLCKDET), the outputs are disabled. In this condition the motor will not be driven for a set time tOFF. ...
... CT pin provides the timing for the Locked Rotor monitor. In normal operation, Lock Detect is enabled. If the Hall signal does not change (i.e. a rotor lock condition) within the Lock Detect time (tLCKDET), the outputs are disabled. In this condition the motor will not be driven for a set time tOFF. ...
Efficiency improvement with silicon carbide based power modules
... The demand for low switching loss, low conduction loss and high temperature devices is a major driving force of technology development in power semiconductors. In the recent years, SiC (silicon carbide) based Schottky diodes have been introduced into the market as discrete devices in standard TO-pac ...
... The demand for low switching loss, low conduction loss and high temperature devices is a major driving force of technology development in power semiconductors. In the recent years, SiC (silicon carbide) based Schottky diodes have been introduced into the market as discrete devices in standard TO-pac ...
Diode
In electronics, a diode is a two-terminal electronic component that conducts primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance to the flow of current in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. A vacuum tube diode has two electrodes, a plate (anode) and a heated cathode. Semiconductor diodes were the first semiconductor electronic devices. The discovery of crystals' rectifying abilities was made by German physicist Ferdinand Braun in 1874. The first semiconductor diodes, called cat's whisker diodes, developed around 1906, were made of mineral crystals such as galena. Today, most diodes are made of silicon, but other semiconductors such as selenium or germanium are sometimes used.