LABORATORY MANUAL P242 (Basic Electronics Lab) (2013‐2014)
... negative and N-side is connected to the positive terminal of the power supply. This increases the potential barrier due to which no current should flow ideally. But in practice, the minority carriers can travel down the potential barrier to give very small current. This is called as the reverse satu ...
... negative and N-side is connected to the positive terminal of the power supply. This increases the potential barrier due to which no current should flow ideally. But in practice, the minority carriers can travel down the potential barrier to give very small current. This is called as the reverse satu ...
TTL - UStudy.in
... In normal operation, either Q3 or Q4 will be conducting, depending on the logic state of the output. The transistor Q2 acts as a phase splitter. ...
... In normal operation, either Q3 or Q4 will be conducting, depending on the logic state of the output. The transistor Q2 acts as a phase splitter. ...
Introduction to SIDACtor® Devices
... Maximize D2 – For best coordination with on-chip ESD protection Minimize D3 – Stub traces should be avoided ...
... Maximize D2 – For best coordination with on-chip ESD protection Minimize D3 – Stub traces should be avoided ...
AN-5073 - Fairchild
... For IGBT drive design, especially for low- and mediumpower IGBT drive applications, engineers tend to adopt a simple board-level layout and a straight-forward solution. Removing the driving negative power supply becomes an attractive solution, while it also poses certain challenges. As shown in Figu ...
... For IGBT drive design, especially for low- and mediumpower IGBT drive applications, engineers tend to adopt a simple board-level layout and a straight-forward solution. Removing the driving negative power supply becomes an attractive solution, while it also poses certain challenges. As shown in Figu ...
being protected
... single polarity single-gate ESD protection device 202 has been used to protect control signal and/or bias supply nodes (pins) of circuits 206 of an integrated circuit package (not shown). The ESD protection device 202 may comprise a ?eld effect transistor (FET) 208 having a drain (D), a source (S) a ...
... single polarity single-gate ESD protection device 202 has been used to protect control signal and/or bias supply nodes (pins) of circuits 206 of an integrated circuit package (not shown). The ESD protection device 202 may comprise a ?eld effect transistor (FET) 208 having a drain (D), a source (S) a ...
balanced modulator
... The product of the carrier and modulating signal can be generated by applying both signals to a nonlinear component such as a diode. A square-law function is one that varies in proportion to the square of the input signals. A diode gives a good approximation of a square-law response. Bipolar and ...
... The product of the carrier and modulating signal can be generated by applying both signals to a nonlinear component such as a diode. A square-law function is one that varies in proportion to the square of the input signals. A diode gives a good approximation of a square-law response. Bipolar and ...
Full-wave center-tap rectifier
... • In “Dim” switch position, incandescent lamp receives approximately one-half power it would normally receive operating on full-wave AC. – Because half-wave rectified power pulses far more rapidly than filament has time to heat up and cool down, lamp does not blink. – Instead, its filament merely op ...
... • In “Dim” switch position, incandescent lamp receives approximately one-half power it would normally receive operating on full-wave AC. – Because half-wave rectified power pulses far more rapidly than filament has time to heat up and cool down, lamp does not blink. – Instead, its filament merely op ...
Full-wave bridge rectifier
... • In “Dim” switch position, incandescent lamp receives approximately one-half power it would normally receive operating on full-wave AC. – Because half-wave rectified power pulses far more rapidly than filament has time to heat up and cool down, lamp does not blink. – Instead, its filament merely op ...
... • In “Dim” switch position, incandescent lamp receives approximately one-half power it would normally receive operating on full-wave AC. – Because half-wave rectified power pulses far more rapidly than filament has time to heat up and cool down, lamp does not blink. – Instead, its filament merely op ...
04_ELC4345_Fall2013_DC_DC_Buck
... because, if it is connected backward, it will short circuit the input voltage. Likewise, the filter capacitor is an electrolytic, and it can rupture if connected backward. So be extra careful with capacitor polarity. 4. Mount a 10µF ripple current capacitor across the Vin terminals. (This capacitor ...
... because, if it is connected backward, it will short circuit the input voltage. Likewise, the filter capacitor is an electrolytic, and it can rupture if connected backward. So be extra careful with capacitor polarity. 4. Mount a 10µF ripple current capacitor across the Vin terminals. (This capacitor ...
Lionel E-Unit 00-0103-00 Theory of Operation
... Transistor (Q7). Saturating current will flow through the E-B junction of Q1 (HBFNB), through R1 (HBFWDN), through the E-C of Q7 (HBFWDP), through R2 (HBFPB), and through the B-E junction of Q4. With Q1 saturated, GND will be provided (via Q1 E-C pins) on the MOTN (W3) signal, and with Q4 saturated, ...
... Transistor (Q7). Saturating current will flow through the E-B junction of Q1 (HBFNB), through R1 (HBFWDN), through the E-C of Q7 (HBFWDP), through R2 (HBFPB), and through the B-E junction of Q4. With Q1 saturated, GND will be provided (via Q1 E-C pins) on the MOTN (W3) signal, and with Q4 saturated, ...
SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky
... High volume wireless systems WiFi and mobile devices Low-noise receivers for high sensitivity ID tags Radio designs ...
... High volume wireless systems WiFi and mobile devices Low-noise receivers for high sensitivity ID tags Radio designs ...
Overview of Silicon Carbide Power Devices
... SiC Schottky Diode: The SiC Schottky diode is the first successfully commercialized SiC power device. Schottky diodes are majority carrier devices, and they do not have reverse recovery phenomena—a very favorable characteristic for high-voltage applications. The SiC technology extended the breakdown ...
... SiC Schottky Diode: The SiC Schottky diode is the first successfully commercialized SiC power device. Schottky diodes are majority carrier devices, and they do not have reverse recovery phenomena—a very favorable characteristic for high-voltage applications. The SiC technology extended the breakdown ...
Datasheet
... Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and d ...
... Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and d ...
A new ZVT PWM DC-DC converter
... on and off under exact or near zero voltage switching (ZVS) and/or zero current switching (ZCS). No additional voltage and current stresses on the main switch and main diode occur. Also, the auxiliary switch and auxiliary diodes are subjected to voltage and current values at allowable levels. Moreov ...
... on and off under exact or near zero voltage switching (ZVS) and/or zero current switching (ZCS). No additional voltage and current stresses on the main switch and main diode occur. Also, the auxiliary switch and auxiliary diodes are subjected to voltage and current values at allowable levels. Moreov ...
Protect Sensitive Circuits from Overvoltage and Reverse Supply
... operating voltage window for at least 36ms in order to turn the external MOSFET back on. This effectively blocks 50Hz and 60Hz unrectified AC. LTC4365 also protects against negative VIN connections even when VOUT is driven by a separate supply. As long as the breakdown voltage of the external MOSFET ...
... operating voltage window for at least 36ms in order to turn the external MOSFET back on. This effectively blocks 50Hz and 60Hz unrectified AC. LTC4365 also protects against negative VIN connections even when VOUT is driven by a separate supply. As long as the breakdown voltage of the external MOSFET ...
AND8232 - PCB Design Guidelines that
... regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, includin ...
... regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, includin ...
Ch 4 Optical source
... into a proportional current flowing through the LED, D1. Also referred to as a transconductance amplifier, this ...
... into a proportional current flowing through the LED, D1. Also referred to as a transconductance amplifier, this ...
Product Summary Features and Benefits COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
RB088B150
... scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk ...
... scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk ...
Chapter 3 Diodes and Applications
... Diode is the most basic of semiconductor device. It should be noted that the term of diode refers to the basic p-n junction diode. All other diode types have other identifying names, such as zener diode, light-emitting diode and so on. A diode is a two-electrode (two-terminal) device that acts as a ...
... Diode is the most basic of semiconductor device. It should be noted that the term of diode refers to the basic p-n junction diode. All other diode types have other identifying names, such as zener diode, light-emitting diode and so on. A diode is a two-electrode (two-terminal) device that acts as a ...
Diode
In electronics, a diode is a two-terminal electronic component that conducts primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance to the flow of current in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. A vacuum tube diode has two electrodes, a plate (anode) and a heated cathode. Semiconductor diodes were the first semiconductor electronic devices. The discovery of crystals' rectifying abilities was made by German physicist Ferdinand Braun in 1874. The first semiconductor diodes, called cat's whisker diodes, developed around 1906, were made of mineral crystals such as galena. Today, most diodes are made of silicon, but other semiconductors such as selenium or germanium are sometimes used.