STGW30NC60VD
... 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 19. Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) ...
... 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 19. Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) ...
A Marantz 8B Replica
... from the first stage to the phase splitter along the signal flow from the input to the output stage. I used a scheme that puts either resistor or capacitor between the valve-socket pins and the PTP board pins, minimizing a number of terminal pins on the board. Bend the component leadwires so that th ...
... from the first stage to the phase splitter along the signal flow from the input to the output stage. I used a scheme that puts either resistor or capacitor between the valve-socket pins and the PTP board pins, minimizing a number of terminal pins on the board. Bend the component leadwires so that th ...
MAX31913 Industrial, Octal, Digital Input Translator/Serializer General Description
... optocouplers used for isolation. The device serializer is stackable so that any number of input channels can be serialized and output through only one SPI-compatible port. This reduces the number of optocouplers needed to only three, regardless of the number of input channels. For enhanced robustnes ...
... optocouplers used for isolation. The device serializer is stackable so that any number of input channels can be serialized and output through only one SPI-compatible port. This reduces the number of optocouplers needed to only three, regardless of the number of input channels. For enhanced robustnes ...
FEATURES TYPICAL APPLICATION CIRCUITS
... The ADP320 triple LDO can be damaged when the junction temperature limits are exceeded. Monitoring ambient temperature does not guarantee that the junction temperature (TJ) is within the specified temperature limits. In applications with high power dissipation and poor thermal resistance the maximum ...
... The ADP320 triple LDO can be damaged when the junction temperature limits are exceeded. Monitoring ambient temperature does not guarantee that the junction temperature (TJ) is within the specified temperature limits. In applications with high power dissipation and poor thermal resistance the maximum ...
Development of a prototype voice
... addition to this there are many high performance RF mixers that are available on the market. These RF mixers have very high levels of specification and perform to very high standards. Radio frequency or RF mixing is a non-linear process that involves the instantaneous level of one signal affecting t ...
... addition to this there are many high performance RF mixers that are available on the market. These RF mixers have very high levels of specification and perform to very high standards. Radio frequency or RF mixing is a non-linear process that involves the instantaneous level of one signal affecting t ...
ad558
... • In MC1480, the digital inputs are converted to current (Iout) and by connecting a resister to the Iout pin, we convert the result to voltage. • The current provided by Iout is a function of binary numbers at D0-D7 and the reference current. ...
... • In MC1480, the digital inputs are converted to current (Iout) and by connecting a resister to the Iout pin, we convert the result to voltage. • The current provided by Iout is a function of binary numbers at D0-D7 and the reference current. ...
LT3012 - 250mA, 4V to 80V Low Dropout
... (40μA) drops to 1μA in shutdown. In addition to the low quiescent current, the LT3012 incorporates several protection features which make it ideal for use in battery-powered systems. The device is protected against both reverse input and reverse output voltages. In battery backup applications where ...
... (40μA) drops to 1μA in shutdown. In addition to the low quiescent current, the LT3012 incorporates several protection features which make it ideal for use in battery-powered systems. The device is protected against both reverse input and reverse output voltages. In battery backup applications where ...
Section 3 Chapter 1
... We will use the letter i for the current variable. Historically, this is due the term intensity that had been used for this quantity, but we should not use this term any more, since it could be confused with other quantities with that name. We can now show the formal mathematical definition of curre ...
... We will use the letter i for the current variable. Historically, this is due the term intensity that had been used for this quantity, but we should not use this term any more, since it could be confused with other quantities with that name. We can now show the formal mathematical definition of curre ...
7. Electric Circuits
... the resistance of components, such as bulbs. If current can flow along a path without passing through the components this part of the circuit is called a short circuit. ...
... the resistance of components, such as bulbs. If current can flow along a path without passing through the components this part of the circuit is called a short circuit. ...
Common Emitter Characteristics
... • A small change in α causes a much bigger change in ß which means that ß can vary significantly, even from transistor to transistor of the same type. • We must try and allow for these variations in circuit design. ...
... • A small change in α causes a much bigger change in ß which means that ß can vary significantly, even from transistor to transistor of the same type. • We must try and allow for these variations in circuit design. ...
Current Mode Techniques for Sub-pico
... current introduced by the ESD protection devices in the pads. Curve nmosb corresponds to the parallel of 120 nmosa transistors and dividing the measured current by 120. This way, the ESD device current is divided by 120. As can be seen, there is transistor current well below VGS = 0 V. Therefore, bi ...
... current introduced by the ESD protection devices in the pads. Curve nmosb corresponds to the parallel of 120 nmosa transistors and dividing the measured current by 120. This way, the ESD device current is divided by 120. As can be seen, there is transistor current well below VGS = 0 V. Therefore, bi ...
MAX8830 LED Light Management IC in 2.5mm x 2.5mm UCSP General Description
... white LED camera flash current sink, and four programmable LED current sinks. The internal 1MHz step-up converter features an internal switching MOSFET and synchronous rectifier to improve efficiency and minimize external component count. The camera flash output current and maximum timer is programm ...
... white LED camera flash current sink, and four programmable LED current sinks. The internal 1MHz step-up converter features an internal switching MOSFET and synchronous rectifier to improve efficiency and minimize external component count. The camera flash output current and maximum timer is programm ...
Power Efficient Level Shifter for 16 nm FinFET Near Threshold Circuits
... feedback loop consists of a delay element that connects the output node D (high voltage domain) to the input of two multiplexers, MUX L and MUX R . The delay element is based on two minimum sized serially connected inverters. These inverters are supplied with a high voltage (790 mV) and receive a hi ...
... feedback loop consists of a delay element that connects the output node D (high voltage domain) to the input of two multiplexers, MUX L and MUX R . The delay element is based on two minimum sized serially connected inverters. These inverters are supplied with a high voltage (790 mV) and receive a hi ...
Resistive opto-isolator
Resistive opto-isolator (RO), also called photoresistive opto-isolator, vactrol (after a genericized trademark introduced by Vactec, Inc. in the 1960s), analog opto-isolator or lamp-coupled photocell, is an optoelectronic device consisting of a source and detector of light, which are optically coupled and electrically isolated from each other. The light source is usually a light-emitting diode (LED), a miniature incandescent lamp, or sometimes a neon lamp, whereas the detector is a semiconductor-based photoresistor made of cadmium selenide (CdSe) or cadmium sulfide (CdS). The source and detector are coupled through a transparent glue or through the air.Electrically, RO is a resistance controlled by the current flowing through the light source. In the dark state, the resistance typically exceeds a few MOhm; when illuminated, it decreases as the inverse of the light intensity. In contrast to the photodiode and phototransistor, the photoresistor can operate in both the AC and DC circuits and have a voltage of several hundred volts across it. The harmonic distortions of the output current by the RO are typically within 0.1% at voltages below 0.5 V.RO is the first and the slowest opto-isolator: its switching time exceeds 1 ms, and for the lamp-based models can reach hundreds of milliseconds. Parasitic capacitance limits the frequency range of the photoresistor by ultrasonic frequencies. Cadmium-based photoresistors exhibit a ""memory effect"": their resistance depends on the illumination history; it also drifts during the illumination and stabilizes within hours, or even weeks for high-sensitivity models. Heating induces irreversible degradation of ROs, whereas cooling to below −25 °C dramatically increases the response time. Therefore, ROs were mostly replaced in the 1970s by the faster and more stable photodiodes and photoresistors. ROs are still used in some sound equipment, guitar amplifiers and analog synthesizers owing to their good electrical isolation, low signal distortion and ease of circuit design.