• Study Resource
  • Explore
    • Arts & Humanities
    • Business
    • Engineering & Technology
    • Foreign Language
    • History
    • Math
    • Science
    • Social Science

    Top subcategories

    • Advanced Math
    • Algebra
    • Basic Math
    • Calculus
    • Geometry
    • Linear Algebra
    • Pre-Algebra
    • Pre-Calculus
    • Statistics And Probability
    • Trigonometry
    • other →

    Top subcategories

    • Astronomy
    • Astrophysics
    • Biology
    • Chemistry
    • Earth Science
    • Environmental Science
    • Health Science
    • Physics
    • other →

    Top subcategories

    • Anthropology
    • Law
    • Political Science
    • Psychology
    • Sociology
    • other →

    Top subcategories

    • Accounting
    • Economics
    • Finance
    • Management
    • other →

    Top subcategories

    • Aerospace Engineering
    • Bioengineering
    • Chemical Engineering
    • Civil Engineering
    • Computer Science
    • Electrical Engineering
    • Industrial Engineering
    • Mechanical Engineering
    • Web Design
    • other →

    Top subcategories

    • Architecture
    • Communications
    • English
    • Gender Studies
    • Music
    • Performing Arts
    • Philosophy
    • Religious Studies
    • Writing
    • other →

    Top subcategories

    • Ancient History
    • European History
    • US History
    • World History
    • other →

    Top subcategories

    • Croatian
    • Czech
    • Finnish
    • Greek
    • Hindi
    • Japanese
    • Korean
    • Persian
    • Swedish
    • Turkish
    • other →
 
Profile Documents Logout
Upload
Part 2 : Nanostuctures Module 8 : Coulomb blockade and single
Part 2 : Nanostuctures Module 8 : Coulomb blockade and single

Preventing HMI and Switch Damage from DC Inductive
Preventing HMI and Switch Damage from DC Inductive

... When the switch is opened, the current is interrupted and the magnetic field changes in strength and collapses. This induces a current to flow through the circuit in the opposite direction, according to Lenz’s Law. A negative potential is created where there was once a positive potential, and vice v ...
FDS6890A Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDS6890A Dual N-Channel 2.5V Specified PowerTrench MOSFET

... support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when ...
NATIONAL SEMICONDUCTOR (LM556CN) DUAL TIMER
NATIONAL SEMICONDUCTOR (LM556CN) DUAL TIMER

... National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. ...
NSI50150AD - Adjustable Constant Current Regulator and LED Driver
NSI50150AD - Adjustable Constant Current Regulator and LED Driver

MDD312-20N1
MDD312-20N1

Monte Carlo Simulation of Device Variations
Monte Carlo Simulation of Device Variations

Large-Current Driving Applications
Large-Current Driving Applications

Superconductivity Is Pair Work - Max-Planck
Superconductivity Is Pair Work - Max-Planck

... atoms in crystals succeed in doing just that, as they can share certain electrons among each other. These electrons provide the glue, the chemical bond, between the atoms. This works only with the aid of quantum physics: since electrons, as quantum particles, are also spatially extended waves, they ...
AND8236/D
AND8236/D

... the output voltage capability. Such a combination is achieved by means of four diodes assembled in a bridge structure as depicted in the schematic diagram given in Figure 3. The dual diodes, assembled in a SOT−23 package, carry the output current during the switching cycles. During the Ton time, pin ...
Circuit Note CN-0058
Circuit Note CN-0058

EECE 2010
EECE 2010

Is Only Full SiC the "Real" SiC?
Is Only Full SiC the "Real" SiC?

... raw material is expensive to produce. SiC ingots grow very slowly and have to be formed from the vapour phase. SiC is one of the hardest known materials and the wafers can only be cut and ground using expensive diamond tools. Additionally, the majority of the chips nowadays are still produced on 4 i ...
Preliminary Datasheet
Preliminary Datasheet

... constant frequency, current mode control scheme to provide excellent line and load regulation. Operation can be best understood by referring to Figure 3 and Figure 17. At the start of each oscillator cycle, switch Q1 turns on. The switch current will increase linearly. The voltage on sense resistor ...
NUD4011 Low Current LED Driver
NUD4011 Low Current LED Driver

... Industrial: General Lighting Applications and Small Appliances Automotive: Tail Lights, Directional Lights, Back−up Light, Dome Light ...
High Power RF LDMOS Transistors for Avionics Applications
High Power RF LDMOS Transistors for Avionics Applications

... output power levels a class-AB biasing is preferred. An optimum trade-off can be found between output power, linearity and efficiency simply by modulating the gate-source voltage reciprocal to the required output power. By designing a device with a high power capability no decrease in linearity will ...
lecture 4 sem probe top down
lecture 4 sem probe top down

... The electrons which are emitted from the filament regardless of the type of emitter are "replaced" by virtue of the fact that there is a connection to ground and the electron reservoir in metals is a continuum, hence the filament remains overall neutral. If this ground connection was not present, th ...
M05
M05

... between the plates., and 3. The dielectric used between the plates. ...
MEMS Micro Electro Mechanical Systems.doc
MEMS Micro Electro Mechanical Systems.doc

... manufacturing technology that enables the development of electromechanical systems using batch fabrication techniques similar to those used in integrated circuit (IC) design. They can range in size from micrometers to millimeters MEMS integrate mechanical elements, sensors, actuators and electronics ...
Electronics in Motion and Conversion May 2015
Electronics in Motion and Conversion May 2015

... The new 1700V IGBT 5 and Emitter Controlled diode generation 5 Improvements in silicon performance are the basis to achieving higher power densities in modules used in inverter systems for a variety of applications. Wind turbines are one example where the desired power capacity per system has contin ...
signalgenpro
signalgenpro

... Practical current sources Sources using active devices Active current sources have many important applications in electronic circuits. Current sources are often used in place of resistors in analog integrated circuits to generate a current without causing attenuation at a point in the signal path to ...
Can nanosilicon be true direct band gap material
Can nanosilicon be true direct band gap material

... Can silicon ever be a true direct bandgap semiconductor? The first observation of a new short-lived photoluminescence band from silicon nanocrystals offers fresh hope. Silicon is ubiquitous in the electronics industry but is unsuitable for optoelectronic applications because it has an indirect bandg ...
Electrical Technology Memo (English)
Electrical Technology Memo (English)

TRANSISTOR AMPLIFIER - IDC
TRANSISTOR AMPLIFIER - IDC

RA03M9595M 数据资料DataSheet下载
RA03M9595M 数据资料DataSheet下载

... 2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality a ...
< 1 ... 84 85 86 87 88 89 90 91 92 ... 132 >

Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
  • studyres.com © 2025
  • DMCA
  • Privacy
  • Terms
  • Report