DATA  SHEET BB215 UHF variable capacitance diode
									
... more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods ...
                        	... more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods ...
									DB4301594597
									
... transistors as header and footer. These transistors are connected as a new technique to vary the body effect of the transistor in two different modes. "CMOS" refers to both a particular style of digital circuitry design and the family of processes used to implement that circuitry on integrated circu ...
                        	... transistors as header and footer. These transistors are connected as a new technique to vary the body effect of the transistor in two different modes. "CMOS" refers to both a particular style of digital circuitry design and the family of processes used to implement that circuitry on integrated circu ...
									FDG330P P-Channel 1.8V Specified PowerTrench MOSFET
									
... support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use prov ...
                        	... support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use prov ...
									RA05H9595M 数据资料DataSheet下载
									
... 2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality a ...
                        	... 2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality a ...
									Electric Current File
									
... The flow of charge in a conductor.  In solid conductors it is the electrons that carry the charge through the circuit.  This happens because these electrons (conduction electrons) are free to move throughout the atomic network. ...
                        	... The flow of charge in a conductor.  In solid conductors it is the electrons that carry the charge through the circuit.  This happens because these electrons (conduction electrons) are free to move throughout the atomic network. ...
									Gallium Nitride devices poised to become core technology in power
									
... Systems has developed an unparalleled range of gallium nitride, high power transistors based on its unique Island Technology® design. These new GaN devices offer significant advantages over traditional silicon MOSFETs and IGBTs and usher in smaller, lighter and more efficient power electronics in nu ...
                        	... Systems has developed an unparalleled range of gallium nitride, high power transistors based on its unique Island Technology® design. These new GaN devices offer significant advantages over traditional silicon MOSFETs and IGBTs and usher in smaller, lighter and more efficient power electronics in nu ...
									Presentazione di PowerPoint - Istituto Nazionale di Fisica
									
... decoupling capacitor, which must be much larger than the capacitance to the neighbours to ensure good signal collection (over 100 pF). A possible solution consists in integrating a capacitor directly on the strips, using as plates the metal line and the implant and a thin SiO2 layer as ...
                        	... decoupling capacitor, which must be much larger than the capacitance to the neighbours to ensure good signal collection (over 100 pF). A possible solution consists in integrating a capacitor directly on the strips, using as plates the metal line and the implant and a thin SiO2 layer as ...
									2011 ieee subthreshold microelectronics conference
									
... Ultra-low-power microelectronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. Ubiquitous sensor networks, RFID tags, implanted medical devices, portable biosensors, handheld devices, and space-based applications are ...
                        	... Ultra-low-power microelectronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. Ubiquitous sensor networks, RFID tags, implanted medical devices, portable biosensors, handheld devices, and space-based applications are ...
									L272 / L272A Dual Power Operational Amplifier L272 / L272 A —
									
... cause the failure of the life support device or system, or to affect its safety or effectiveness. accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's ...
                        	... cause the failure of the life support device or system, or to affect its safety or effectiveness. accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's ...
									From NEMO1D and NEMO3D to OMEN: moving towards atomistic 3
									
... origin and reduction of the RTD valley current. Although it was widely accepted that phonon scattering is creating the dominating valley current, this turned out to not be true for high performance, high current InP-based InGaAs/InAlAs 300K RTDs. Instead the critical processes were (a) thermionic tr ...
                        	... origin and reduction of the RTD valley current. Although it was widely accepted that phonon scattering is creating the dominating valley current, this turned out to not be true for high performance, high current InP-based InGaAs/InAlAs 300K RTDs. Instead the critical processes were (a) thermionic tr ...
									2SD1383K
									
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
                        	... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
									Gen Chem Redox Reactions Summary
									
... the anode (e.g. causing a battery to become “dead”). The redox reactions can be “reversed” by a nonspontaneous reaction. a. Voltaic cells are “batteries” that supply potential (voltage or electrical energy) to run motors, light bulbs, etc. b. Eventually, the potential in the voltaic cells will deple ...
                        	... the anode (e.g. causing a battery to become “dead”). The redox reactions can be “reversed” by a nonspontaneous reaction. a. Voltaic cells are “batteries” that supply potential (voltage or electrical energy) to run motors, light bulbs, etc. b. Eventually, the potential in the voltaic cells will deple ...
									Infineon LNA BFP540FESD
									
... the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ...
                        	... the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ...
									LASER PULSE DETECTION: The Tradeoff between Pulse
									
... Absorption of laser energy by a pyroelectric crystal produces charge ... in a crystal with capacitance into a resistive load. The conversion of charge to a voltage is a temporal process adding time/frequency to the parameters. Thus the voltage output magnitude is dependent on the detector’s impedanc ...
                        	... Absorption of laser energy by a pyroelectric crystal produces charge ... in a crystal with capacitance into a resistive load. The conversion of charge to a voltage is a temporal process adding time/frequency to the parameters. Thus the voltage output magnitude is dependent on the detector’s impedanc ...
									Crystallization Development
									
... their structure. Crystals usually form when rocks are heated then cool slowly. Crystals have a regular internal structure and grow into a distinct geometric pattern. Crystals can also be grown from other crystals. No two crystals ever grow the same way. ...
                        	... their structure. Crystals usually form when rocks are heated then cool slowly. Crystals have a regular internal structure and grow into a distinct geometric pattern. Crystals can also be grown from other crystals. No two crystals ever grow the same way. ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.